Abstract: A light emitting device includes a substrate and a light emitting body. The light emitting body includes a plurality of light emitting elements and an insulating body in which the plurality of light emitting elements is embedded except for a light emitting surface of the plurality of light emitting elements. The plurality of light emitting elements is formed from a singulated compound semiconductor layer and is arranged in a row direction and a column direction. The substrate includes a drive circuit, a first terminal, and a second terminal and is joined to the light emitting body. The drive circuit drives the plurality of light emitting elements. The first terminal and the second terminal electrically couple the drive circuit and the plurality of light emitting elements to each other.

Abstract: A light-emitting device of an embodiment of the present disclosure includes: an insulating layer having a first surface and a second surface that are opposed to each other; multiple columnar structures each including a columnar crystalline structure of a first electrically-conductive type erected in a direction perpendicular to the first surface of the insulating layer, and an active layer and a semiconductor layer of a second electrically-conductive type that are stacked in this order on a side surface and a top surface of the columnar crystalline structure; and a light-blocking member provided between the multiple columnar structures and having an inclined surface of less than 90° relative to the first surface.

Abstract: A light-emitting device includes: a light-emitting element provided separately for each of pixels; a pixel electrode provided on a side of a first surface of the light-emitting element, the pixel electrode being provided for each of the pixels; a common electrode provided on a side of a second surface of the light-emitting element, the second surface being opposite to the first surface, the common electrode being provided separately for each of the pixels that are adjacent to each other; and an electrode coupler that electrically couples a plurality of the common electrodes provided for the respective pixels to each other in a plane region that is different from a plane region in which the light-emitting element is provided.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: An outer member fixed to an outer peripheral portion of a main rubber elastic body has a projecting part projecting peripherally outward. First and second assembly members each include an annular fastening plate part so that the annular fastening plate parts are superposed and fixed while clamping the projecting part to constitute a bracket supporting the projecting part. A clinch fastening part is formed such that one of the annular fastening plate parts is folded back to cover an outer peripheral rim of the other annular fastening plate part and fastened by clinching to the other annular fastening plate part with clinching force being not directly exerted on the projecting part. A locking section is provided at the annular fastening plate part of at least one of the assembly members, and the projecting part being locked and positioned relative to the annular fastening plate part.

Abstract: A vibration damping device including first and second side opposition surfaces mutually and separately opposed and elastically connected by a main rubber elastic body. A protruding part is provided at the first side opposition surface to protrude toward the second side opposition surface with a protrusion dimension with which the protruding part does not reach the second side opposition surface, in a section peripherally inside an outer peripheral edge of the main rubber elastic body. A recessed part is provided at the second side opposition surface in opposition to the protruding part so as to be recessed to a distant side from the protruding part and open in the second side opposition surface. The protruding part has an outer face without a break and is buried in the main rubber elastic body. The recessed part is filled with the main rubber elastic body.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A fluid mixing device includes a hollow tubular main body (41) to mix an exhaust gas (G4) and a warming gas (G5) within it, a first inflow port (43) provided in an upstream end portion of the main body (41) and through which the exhaust gas (G4) flows, a mixing promotion body (38) of a tubular shape disposed inside the main body (41) and having a longitudinal axis (C1) extending in a direction conforming to a direction of flow of the exhaust gas (G4), and a second inflow port (45) provided in a peripheral wall of the main body (41) and through which the warming gas (G5) flows towards an outer peripheral wall of the mixing promotion body (38). The exhaust gas (G4) flows outside and inside the mixing promotion body (38).

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: The gas turbine system (GT) includes a combustor (2) having a fuel injection nozzle assembly (4) for jetting hydrogen gas (H) and pure water (W), a reservoir (12) for pooling the pure water (W) to be supplied to the combustor (2), a gas compressing device (10) for boosting the hydrogen gas (H) to be supplied to the combustor (2), a fuel supply passage (6) for guiding the boosted hydrogen gas (H) towards the combustor (2), and a pressurizing passage (16) communicating between the reservoir (12) and the fuel supply passage (6) for pressurizing the pure water (W) by means of the boosted hydrogen gas (H).

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A cylindrical vibration-damping device equipped with an outer bracket, the outer bracket having a structure in which a press-fit member is press fit into a peripheral wall of a bracket body. A primary inner projection is provided at one axial end of the peripheral wall, while a secondary inner projection is provided at another axial end thereof. The outer bracket also includes a positioning section that is provided through mutual contact of axially opposing surfaces of the bracket body and the press-fit member and that determines a position of the press-fit member. The press-fit member which is molded as a thick-walled molded part has a thick contact surface formed on a tip end of the press-fit member in a direction of press fitting, and the thick contact surface comes into contact with a vibration damping rubber in the axial direction.

Abstract: A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a V-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a V-pit formed therein. The trigger layer is made of a nitride semiconductor material having a lattice constant different from that of a material that forms an upper surface of the n-type nitride semiconductor layer. The V-pit expanding layer is made of a nitride semiconductor material having a lattice constant substantially identical to that of the material that forms the upper surface of the n-type nitride semiconductor layer, and the V-pit expanding layer has a thickness of 5 nm or more and 5000 nm or less.

Abstract: A cylindrical vibration-damping device equipped with an outer bracket, the outer bracket having a structure in which a press-fit member is press fit into a peripheral wall of a bracket body. A primary inner projection is provided at one axial end of the peripheral wall, while a secondary inner projection is provided at another axial end thereof. The outer bracket also includes a positioning section that is provided through mutual contact of axially opposing surfaces of the bracket body and the press-fit member and that determines a position of the press-fit member. The press-fit member which is molded as a thick-walled molded part has a thick contact surface formed on a tip end of the press-fit member in a direction of press fitting, and the thick contact surface comes into contact with a vibration damping rubber in the axial direction.

Abstract: A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a V-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a V-pit formed therein. The trigger layer is made of a nitride semiconductor material having a lattice constant different from that of a material that forms an upper surface of the n-type nitride semiconductor layer. The V-pit expanding layer is made of a nitride semiconductor material having a lattice constant substantially identical to that of the material that forms the upper surface of the n-type nitride semiconductor layer, and the V-pit expanding layer has a thickness of 5 nm or more and 5000 nm or less.

Abstract: The gas turbine system (GT) includes a combustor (2) having a fuel injection nozzle assembly (4) for jetting hydrogen gas (H) and pure water (W), a reservoir (12) for pooling the pure water (W) to be supplied to the combustor (2), a gas compressing device (10) for boosting the hydrogen gas (H) to be supplied to the combustor (2), a fuel supply passage (6) for guiding the boosted hydrogen gas (H) towards the combustor (2), and a pressurizing passage (16) communicating between the reservoir (12) and the fuel supply passage (6) for pressurizing the pure water (W) by means of the boosted hydrogen gas (H).

Abstract: A fluid mixing device includes a hollow tubular main body (41) to mix an exhaust gas (G4) and a warming gas (G5) within it, a first inflow port (43) provided in an upstream end portion of the main body (41) and through which the exhaust gas (G4) flows, a mixing promotion body (38) of a tubular shape disposed inside the main body (41) and having a longitudinal axis (C1) extending in a direction conforming to a direction of flow of the exhaust gas (G4), and a second inflow port (45) provided in a peripheral wall of the main body (41) and through which the warming gas (G5) flows towards an outer peripheral wall of the mixing promotion body (38). The exhaust gas (G4) flows outside and inside the mixing promotion body (38).

Abstract: Provided is a compact lean-fuel gas turbine engine which does not cause performance degradation of the engine or pressure loss in the exhaust system, which comprises a compressor (1) for compressing an operative gas (G1) to generate a compressed gas (G2), the operative gas (G1) having a concentration of burnable component which is less than a flammability limit thereof, a catalytic combustor (2) for combusting the compressed gas (G2) by a catalytic reaction with an aid of a catalyst accommodated therein to generate a combustion gas (G3), a turbine (3) adapted to be driven by the combustion gas (G3) supplied from the catalytic combustor (2), a regenerator (6) for heating the compressed gas (G2) supplied from the compressor (1) to the catalytic combustor (2) by an exhaust gas (G4) supplied from the turbine (3) through an exhaust gas passage (25) to the regenerator (6), a burner (7) for burning a gas (G20) extracted from the compressor (1) with a fuel to generate a heating gas (G5) and supplying the heating gas

Abstract: A combustion device includes: a combustion liner in which a combustion chamber is formed; a main burner provided at a top portion of the combustion liner and including a premix passage configured to annularly inject a pre-mixed gas of a fuel and air into the combustion chamber and a radial swirler configured to introduce the fuel and the air to the premix passage in a radially inward direction; and a fuel injection pipe configured to inject the fuel to the radial swirler from an entrance side of the radial swirler, and the radial swirler is divided into a plurality of swirler stages by dividing plates in an axial direction.

Abstract: A second bush of a torque rod is fastened and fixed such that a mating fastening member sandwiches an inner fitting in the axial direction. A rubber stopper on an acceleration side projecting from an outer fitting to the inner fitting is provided such that the rubber thickness increases toward a front end. The inner fitting is provided with a stopper contact forming a recessed space in which the rubber stopper is inserted. After the rubber stopper comes in contact with the stopper contact in a stopper function, the rubber stopper is deformed so as to fill the recessed space, and concurrently bulges in the axial direction to come in contact with the mating fastening member.