Abstract: A LCD device includes pixels formed of column data lines and row scanning lines. The pixel includes a display element; a first switching unit that performs sampling on each frame data of an input video signal; a first holding unit that configures an SRAM, and holds sub frame data; a second switching unit that causes the sub frame data held in the first holding unit; and a second holding unit that configures a DRAM, and applies output data to the pixel electrode, a pixel control unit that performs an operation of repeating writing the sub frame data in the first holding unit, turning on the second switching units, and rewriting memory content of the second holding units; and a timing control unit. A delay of a certain period of time is sequentially given to a timing at which the pixel control unit turns on the second switching unit.

Abstract: A LCD device includes pixels formed of column data lines and row scanning lines. The pixel includes a display element; a first switching unit that performs sampling on each frame data of an input video signal; a first holding unit that configures an SRAM, and holds sub frame data; a second switching unit that causes the sub frame data held in the first holding unit; and a second holding unit that configures a DRAM, and applies output data to the pixel electrode, a pixel control unit that performs an operation of repeating writing the sub frame data in the first holding unit, turning on the second switching units, and rewriting memory content of the second holding units; and a timing control unit. A delay of a certain period of time is sequentially given to a timing at which the pixel control unit turns on the second switching unit.

Abstract: A melt containing lanthanum oxide, tantalum oxide, and gallium oxide is prepared by mixing the powders of these oxides so as to have a stoichiometric composition ratio of an intended lanthanum/tantalum/gallium oxide to be manufactured. A crystal is pulled up from the melt in an atmosphere containing argon and oxygen according to the Czochralski process. The concentration of the oxygen is in a range from 0.1 vol % to 1.5 vol % with respect to the concentration of the argon.