Abstract: A refrigerant amount determining device includes: an operation data acquiring unit configured to acquire operation data of an air conditioning system; a calculating unit configured to calculate a refrigerant amount index value from the operation data acquired; an inferring unit configured to infer information regarding correction of the refrigerant amount index value using a correction model and at least one of the acquired operation data or the calculated refrigerant amount index value; and a determining unit configured to determine a refrigerant amount of the air conditioning system based on the information regarding correction of the refrigerant amount index value.

Abstract: A performance evaluation method for elastic material including rubber or elastomer, the method includes: a step of applying a strain to a test piece made of an elastic material to form at least one low-density portion inside the test piece; after forming the low-density portion, a step of obtaining projected images of the test piece by irradiating the test piece with X-rays at a predetermined first time and at a second time after the first time; a step of identifying the low-density portion based on the projected images at the first time; a step of identifying the low-density portion based on the projected images at the second time; a step of identifying a volume change of the at least one low-density portion between the first time and the second time; and a step of outputting the volume change as one of indicators of performance of the elastic material.

Abstract: Provided is a method for estimating abrasion resistance of polymer composite materials. The present disclosure relates to a method for estimating abrasion resistance, the method including: irradiating a sulfur compound-containing polymer composite material with high intensity X-rays; measuring an X-ray absorption in a small region of the polymer composite material while varying an energy of the X-rays, whereby a dispersion state and a chemical state of the sulfur compound are analyzed; and quantifying an inhomogeneous state of cross-link degradation in the polymer composite material based on the dispersion state and the chemical state.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, first and second conductive parts, first and second gate electrodes, and a first connection part. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on a portion of the second semiconductor region. The first conductive part is located in the first semiconductor region with a first insulating part interposed. The first gate electrode is located in the first insulating part. The second conductive part is located in the first semiconductor region with a second insulating part interposed. The second gate electrode is located in the second insulating part. The first connection part is located higher than the second and third semiconductor regions. The second electrode is located on the second and third semiconductor regions.

Abstract: A semiconductor device includes: a first semiconductor layer of first conductivity type; a second semiconductor layer of first conductivity type provided on the first semiconductor layer; a first semiconductor region of second conductivity type provided on the second semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a first electrode provided in a first trench, the first trench reaching the second semiconductor layer from above the first semiconductor region, the first electrode facing the first semiconductor region via a first insulating film; a second electrode provided in a second trench, the second trench reaching the second semiconductor layer from above the first semiconductor region, the second electrode facing the first semiconductor region via a second insulating film; a third electrode including a first electrode portion, a second electrode portion provided on the first electrode portion and a third electrode portion provided on

Abstract: For each of one or a plurality of types of samples, a database is constructed in which a sample identification tag and data belonging to at least two types of categories out of Categories (1), (2), and (3) are stored in association with each other. Data to be used as training data in supervised learning is selected from the database. At this time, one or a plurality of types of data is selected as an explanatory variable from one of the categories. Further, one or a plurality of types of data is selected as an objective variable from the other category. Then, training data is generated in which data corresponding to the selected explanatory variable is served as input and data corresponding to the selected objective variable is served as ground truth output.

Abstract: A semiconductor device includes: a first semiconductor layer of first conductivity type; a second semiconductor layer of first conductivity type provided on the first semiconductor layer; a first semiconductor region of second conductivity type provided on the second semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a first electrode provided in a first trench, the first trench reaching the second semiconductor layer from above the first semiconductor region, the first electrode facing the first semiconductor region via a first insulating film; a second electrode provided in a second trench, the second trench reaching the second semiconductor layer from above the first semiconductor region, the second electrode facing the first semiconductor region via a second insulating film; a third electrode including a first electrode portion, a second electrode portion provided on the first electrode portion and a third electrode portion provided on

Abstract: A performance evaluation method for elastic material including rubber or elastomer, the method includes a step of applying a strain to a test piece made of the elastic material to form at least one void inside the test piece, a step of obtaining projected images of the test piece by irradiating the test piece with X-rays at a plurality of times after the at least one void is formed, and a step of obtaining a volume change of the at least one void between the plurality of times based on the projected images, as one of indexes of performance.

Abstract: A pneumatic tire includes bead cores, a carcass ply, an inner liner and the tread, and the crosslinked rubber composition, of the present invention, wherein the tread and the crosslinked rubber composition have a volume of the low density region of 35% or more at elongation by an applied stress of 1.5 MPa, a volume of the void portion of 7.5 or less at elongation by an applied stress of 3.0 MPa and a ratio of 40% by mass or more of a component having a weight-average molecular weight of not less than 1,000,000 in a molecular weight distribution measured by gel permeation chromatography are excellent in abrasion resistance.

Abstract: The pneumatic tire of the present invention characterized by comprising: bead cores, a carcass ply, an inner liner and a tread having a volume of the low density region of 35% or more, at elongation by an applied stress of 1.5 MPa, a volume of the void portion of 7.5% or less at elongation by an applied stress of 3.0 MPa and a glass transition temperature of ?20° C. or lower, and the crosslinked rubber composition of the present invention having a volume of the low density region of 35% or more at elongation by an applied stress of 1.5 MPa, a volume of the void portion of 7.5 or less at elongation by an applied stress of 3.0 MPa and a glass transition temperature of ?20° C. or lower are excellent in abrasion resistance.

Abstract: A pneumatic tire includes bead cores, a carcass ply, an inner liner, and a tread having a volume of the low density region of 35% or more at elongation by an applied stress of 1.5 MPa, a volume of the void portion of 7.5% or less at elongation by an applied stress of 3.0 MPa and a hardness of 65 or more and the crosslinked rubber composition of the present invention having a volume of the low density region of 35% or more at elongation by an applied stress of 1.5 MPa, a volume of the void portion of 7.5 or less at elongation by an applied stress of 3.0 MPa and a hardness of 65 or more are excellent in abrasion resistance.

Abstract: To obtain a temperature sensor device having high reliability and high sensitivity without cost increase. This temperature sensor device includes: a housing provided with a temperature sensor module having a temperature detection element and an external connection terminal connected to the temperature detection element via a lead wire, which are integrated using a first formation member made from a thermoplastic resin, the temperature sensor module being covered with a second formation member made from a thermoplastic resin, so as to form a connector for connecting the external connection terminal to an external signal processing circuit; and a case into which the temperature sensor module is press-fitted and which is opposed to the housing, wherein the first formation member and the second formation member are welded to each other.

Abstract: Provided is a differential pressure sensor capable of improving joining stability of a filter. The differential pressure sensor includes: a sensor module configured to detect a pressure difference between an atmospheric pressure and a pressure of a measured medium; a case body, which is configured to contain the sensor module, and in which an atmosphere introducing hole for introducing atmospheric air into the case body is formed; and a filter provided from inside the case body to cover the atmosphere introducing hole, the case body having a protrusion, which protrudes to an inside of the case body, the atmosphere introducing hole being formed in the protrusion, the filter being joined to the protrusion.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.

Abstract: A semiconductor device includes: a first semiconductor layer of first conductivity type; a second semiconductor layer of first conductivity type provided on the first semiconductor layer; a first semiconductor region of second conductivity type provided on the second semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a first electrode provided in a first trench, the first trench reaching the second semiconductor layer from above the first semiconductor region, the first electrode facing the first semiconductor region via a first insulating film; a second electrode provided in a second trench, the second trench reaching the second semiconductor layer from above the first semiconductor region, the second electrode facing the first semiconductor region via a second insulating film; a third electrode including a first electrode portion, a second electrode portion provided on the first electrode portion and a third electrode portion provided on

Abstract: Provided is a differential pressure sensor capable of improving joining stability of a filter. The differential pressure sensor includes: a sensor module configured to detect a pressure difference between an atmospheric pressure and a pressure of a measured medium; a case body, which is configured to contain the sensor module, and in which an atmosphere introducing hole for introducing atmospheric air into the case body is formed; and a filter provided from inside the case body to cover the atmosphere introducing hole, the case body having a protrusion, which protrudes to an inside of the case body, the atmosphere introducing hole being formed in the protrusion, the filter being joined to the protrusion.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.

Abstract: This disclosure provides an agent for improving plant growth, the agent significantly improving resistances to a wide variety of stress possibly subjected to a plant, such as resistances to chemical stress and ultraviolet ray stress as well as resistances to temperature stress and dry stress, the agent having a high safety. This agent for improving plant growth alleviates an environmental stress on a plant, promotes plant growth, or a plant quality. This agent for improving plant growth contains, as its main ingredient, zerumbone, an analog of zerumbone, or a salt of zerumbone or the analog. Furthermore, in this agent for improving plant growth, the analog of zerumbone is ?-humulene or ?-caryophyllene.

Abstract: Provided is a method for estimating abrasion resistance and fracture resistance by highly accurately analyzing aggregation (dispersion) of sulfur-based materials in polymer composite materials. The present invention relates to a method for estimating abrasion resistance and fracture resistance, the method including: irradiating a polymer composite material containing at least one sulfur-based material selected from the group consisting of sulfur and sulfur compounds with high intensity X-rays; measuring X-ray absorption of a measurement region of the polymer composite material while varying the energy of the X-rays; calculating areas of spots having a high sulfur concentration equal to or greater than a predetermined level in a two-dimensional mapping image of sulfur concentration of the measurement region; and estimating abrasion resistance and fracture resistance based on the areas.