Abstract: A steam turbine member suppresses scale adhesion without impairing corrosion resistance performance and the like of a turbine. There is provided a steam turbine member having a deposited amorphous carbon film provided in an area on a base material at which scale deposition easily occurs, a steam turbine including the same, and a method for producing the steam turbine member.

Abstract: The invention provides a method for producing a peptide which comprises the following steps (1) and (2): (1) a step of condensing a C-protected amino acid or a C-protected peptide to a C-terminal of an N-protected amino acid or an N-protected peptide represented by the formula (I): wherein Y represents an amino acid in which a C-terminal is unprotected or a peptide in which a C-terminal is unprotected, R1, R2 and R3 each independently represent an aliphatic hydrocarbon group which may have a substituent(s), a total number of the carbon atoms in the R1R2R3Si group is 10 or more, and the R1R2R3SiOC(O) group is bonded to the N-terminal in Y, and (2) a step of removing the protective group at the C-terminal of the peptide obtained in step (1).

Abstract: In an amorphous carbon film of a sliding member, provided that a number of nitrogen atoms each singly bonded to three carbon atoms is A, and a number of nitrogen atoms each singly and doubly bonded to two carbon atoms, respectively, is B, a value A/B of the amorphous carbon film obtained through X-ray photoelectron spectroscopy analysis is 10 to 18. The method includes irradiating the surface of the substrate with nitrogen ion beams and irradiating a carbon target with electron beams, thereby forming an amorphous carbon film on the surface of the substrate while vapor-depositing a part of the carbon target onto the surface of the substrate. The output of the electron beams that irradiate the carbon target is 30 to 50 W.

Abstract: A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes.

Abstract: In an amorphous carbon film of a sliding member, provided that a number of nitrogen atoms each singly bonded to three carbon atoms is A, and a number of nitrogen atoms each singly and doubly bonded to two carbon atoms, respectively, is B, a value A/B of the amorphous carbon film obtained through X-ray photoelectron spectroscopy analysis is 10 to 18. The method includes irradiating the surface of the substrate with nitrogen ion beams and irradiating a carbon target with electron beams, thereby forming an amorphous carbon film on the surface of the substrate while vapor-depositing a part of the carbon target onto the surface of the substrate. The output of the electron beams that irradiate the carbon target is 30 to 50 W.

Abstract: A sliding member is capable of moving relative to a counterpart and includes a substrate and an amorphous carbon film which is provided on the substrate. The amorphous carbon film has a nitrogen content of 2 at % to 11 at % and a surface hardness in a range of 25 GPa to 80 GPa.

Abstract: A film-forming device includes: a microwave supplying unit, which supplies microwaves for generating plasma along a treatment surface of a central conductor comprising at least a conductive workpiece material; a negative voltage applying unit, which applies to the workpiece material a negative bias voltage for expanding a sheath layer along the treatment surface of the workpiece material; a microwave transmitting window, which make the microwave, which is supplied by the microwave supplying unit, propagate to the expanded sheath layer through a microwave transmitting surface thereof, and a surrounding wall, which surrounds the microwave transmitting surface of the microwave transmitting window and protrudes beyond the microwave transmitting surface in a propagation direction in which the microwaves propagate.

Abstract: A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes

Abstract: A film forming device includes: a microwave supplying unit configured to supply microwave pulses to generate plasma along a processing surface of a workpiece material; an applying unit configured to apply negative bias voltage pulses to spread a sheath layer along the processing surface of the workpiece material, and a control unit configured to control an applying timing of the negative bias voltage pulses and a supplying timing of the microwave pulses, wherein the control unit is configured to control the applying timing of the negative bias voltage pulses and the supplying timing of the microwave pulses so that a ratio of an applying time period of one negative bias voltage pulse in a supplying time period of one microwave pulse to the supplying time period of one microwave pulse is equal to or greater than 0.9.

Abstract: A sliding member is integrally formed of fluororesin as a whole, and a sliding surface to be slid with a slid member is made hydrophilic. A manufacturing method includes a step of exposing the sliding surface 2 of the sliding member 1 to water plasma 7 generated by Ar gas and vaporized water as raw materials and making the sliding surface 2 hydrophilic.

Abstract: To generate plasma inside a tube of a small opening diameter and perform plasma processing inside the tube. A plasma processing device 2 is formed by a chamber (4) and a microwave generation device (6). A microwave is introduced into the chamber via a quartz tube (16). A tube holder (18) is arranged inside the quartz tube (16). Two holes are formed in the side surface of the tube holder (18). A tube (20) of a small opening diameter is fixed to the end of the tube holder (18).

Abstract: A production method of an isoxazoline-substituted benzoic acid amide compound of Formula (1) where X is a halogen atom, C1-6 haloalkyl, etc., Y is a halogen atom, C1-6 alkyl, etc., R1 is a C1-6 haloalkyl, etc., R2 and R3 independently of each other are a hydrogen atom, C1-6 alkyl, etc., R4 is C1-6 alkyl, C1-6 haloalkyl, etc., R5 is a hydrogen atom, c1-6 alkyl, etc., m is an integer of 0 to 5, n is an integer of 0 to 4, including: reacting an isoxazoline-substituted benzene compound of Formula (3) where X, Y, R1, m, and n are the same as defined above, L is a chlorine atom, a bromine atom, —C(O)OH, —C(O)J, etc., J is a halogen atom, with a 2-aminoacetic acid amide compound of Formula (2) where R2, R3, R4, and R5 are the same as defined above, or a salt thereof; crystal forms and the production method thereof.

Abstract: A production method of an isoxazoline-substituted benzoic acid amide compound of Formula (1) where X is a halogen atom, C1-6 haloalkyl, etc., Y is a halogen atom, C1-6 alkyl, etc., R1 is a C1-6 haloalkyl, etc., R2 and R3 independently of each other are a hydrogen atom, C1-6 alkyl, etc., R4 is C1-6 alkyl, C1-6 haloalkyl, etc., R5 is a hydrogen atom, c1-6 alkyl, etc., m is an integer of 0 to 5, n is an integer of 0 to 4, including: reacting an isoxazoline-substituted benzene compound of Formula (3) where X, Y, R1, m, and n are the same as defined above, L is a chlorine atom, a bromine atom, —C(O)OH, —C(O)J, etc., J is a halogen atom, with a 2-aminoacetic acid amide compound of Formula (2) where R2, R3, R4, and R5 are the same as defined above, or a salt thereof; crystal forms and the production method thereof.

Abstract: This invention provides a process and apparatus for producing a carbonaceous film such as a DLC film using a solid raw material without the need to supply a high energy radiation such as a laser beam. The process comprises providing a solid organic material as a raw material, applying a discharge energy to the material to form plasma, and depositing the plasma onto a base material to form a carbonaceous film. This process is preferably carried out by using a film production apparatus (1) comprising discharge means (10). The discharge means (10) comprises a pair of electrodes (a raw material holder) (12, 14) for holding a raw material (50) and voltage applying means (20) for applying voltage across the electrodes.

Abstract: To generate plasma inside a tube of a small opening diameter and perform plasma processing inside the tube. A plasma processing device 2 is formed by a chamber (4) and a microwave generation device (6). A microwave is introduced into the chamber via a quartz tube (16). A tube holder (18) is arranged inside the quartz tube (16). Two holes are formed in the side surface of the tube holder (18). A tube (20) of a small opening diameter is fixed to the end of the tube holder (18).

Abstract: A disclosed plasma process apparatus includes an electromagnetic wave generator that generates electromagnetic waves; a vacuum vessel configured to be hermetically connected with an object to be processed, and evacuated to reduced pressures along with the object to be processed hermetically connected to the vacuum vessel; an electromagnetic wave guiding portion configured to guide the electromagnetic waves generated by the electromagnetic wave generator so that plasma is ignited in the vacuum vessel; a gas supplying portion configured to supply a process gas to the object to be processed hermetically connected to the vacuum vessel; an evacuation portion configured to evacuate the object to be processed hermetically connected to the vacuum vessel; and a voltage source configured to apply a predetermined voltage to the object to be processed hermetically connected to the vacuum vessel so that the plasma ignited in the vacuum vessel is guided to the object to be processed.

Abstract: A plurality of concentric ring-shaped slots (300) to (304) are formed in a planar antenna member (3), and the thickness of conductors in the central part is made relatively thin and the thickness of peripheral conductors is made relatively thick, so that a microwave can easily pass through the slots (300) to (304) without being attenuated, and a uniform electric field distribution can be provided and uniform high-density plasma can be generated in a processing space on an average. As a result, an object to be processed can be provided close to the antenna member (3) and the object can be uniformly processed at high speed.

Abstract: The present invention provides a process for preparing N-methylated melamines in simple steps by using inexpensive raw materials in such a manner that the proportion of mono-type, bis-type and tris-type of the N-methylated melamines as prepared can be controlled. The process comprises reacting by heating melamine with methylamine in the presence of an acidic catalyst under pressure to substitute at least one amino group of the melamine by methylamino group.

Abstract: The present invention provides a process for preparing N-methylated melamines in simple steps by using inexpensive raw materials in such a manner that the proportion of mono-type, bis-type and tris-type of the N-methylated melamines as prepared can be controlled.

Abstract: A receiver of a communication device includes: a differential amplification circuit; two capacitors for applying only the amplitude components of two input clock signals complementary to each other to the gates of two N-channel MOS transistors of the differential amplification circuit; and an initialization circuit for applying a predetermined reference potential to the gates of the two N-channel MOS transistors in a non data communication state. Thus, it is possible to make a quick and stable transition from a non data communication state to a data communication state.