Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.

Abstract: An object is to suppress differences in concentration between processing gases supplied to a plurality of works in a chemical solution vaporizing tank. The chemical solution vaporizing tank includes a tank body having a plurality of vaporizing chambers formed by laterally and airtightly partitioning an internal space of the tank body, a chemical solution passage located under a liquid level in each vaporizing chamber and formed at each partition member for passing the chemical solution between the vaporizing chambers, and a gas passage located above the liquid level in each vaporizing chamber and formed at the partition member to communicate the vaporizing chambers with each other for uniformizing pressures in the respective vaporizing chambers. A quantity of the channel layer in each vaporizing chamber is controlled by managing, e.g., the liquid level.

Abstract: There is provided a substrate processing method of supplying a processing solution to a substrate through a supply nozzle connected with a supply path via a differential pressure flowmeter provided on the supply path for supplying the processing solution and performing a process on the substrate by the processing solution. The substrate processing method includes measuring a pressure value in the supply path by a pressure measurement unit included in the differential pressure flowmeter when the processing solution is not supplied to the substrate; determining whether the pressure measurement unit is operated normally by comparing the pressure value measured in the measuring process with a predetermined pressure value; and supplying the processing solution to a substrate if it is determined that the pressure measurement unit is operated normally in the determining process.

Abstract: Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.

Abstract: There is provided a substrate processing method of supplying a processing solution to a substrate through a supply nozzle connected with a supply path via a differential pressure flowmeter provided on the supply path for supplying the processing solution and performing a process on the substrate by the processing solution. The substrate processing method includes measuring a pressure value in the supply path by a pressure measurement unit included in the differential pressure flowmeter when the processing solution is not supplied to the substrate; determining whether the pressure measurement unit is operated normally by comparing the pressure value measured in the measuring process with a predetermined pressure value; and supplying the processing solution to a substrate if it is determined that the pressure measurement unit is operated normally in the determining process.

Abstract: Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part or a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.

Abstract: An object is to suppress differences in concentration between processing gases supplied to a plurality of works in a chemical solution vaporizing tank. The chemical solution vaporizing tank includes a tank body having a plurality of vaporizing chambers formed by laterally and airtightly partitioning an internal space of the tank body, a chemical solution passage located under a liquid level in each vaporizing chamber and formed at each partition member for passing the chemical solution between the vaporizing chambers, and a gas passage located above the liquid level in each vaporizing chamber and formed at the partition member to communicate the vaporizing chambers with each other for uniformizing pressures in the respective vaporizing chambers. A quantity of the channel layer in each vaporizing chamber is controlled by managing, e.g., the liquid level.

Abstract: An electronic component device includes a printed wiring board having a side surface terminal portion formed of a recessed groove, filler, and plating conductor. The recessed groove is formed in a side surface, or a corner adjacent to the side surface, of a board and extending from an upper surface to a lower surface. The filler fills the groove and has a plating catalytic function. The plating conductor covers an exposed surface of the filler. A method of manufacturing the electronic component device is also disclosed.

Abstract: A printed wiring board (1) having a cavity (20) for mounting electronic parts therein and a method for manufacturing thereof, comprising: an upper wiring substrate (1A) having flat surfaces on both sides; a lower plate body (1B) being fixed on a reverse side surface of the upper wiring substrate, and being formed with the cavity (20) in a part thereof, for receiving an electronic part (30) within an inside thereof; conductor layers (3) provided on both side surfaces of the upper wiring substrate for mounting electronic parts thereon, by forming plated through-holes (7) or flat through-holes (7′), in particular with in a region of the cavity on the reverse side surface thereof; and external electrodes (5) formed on side-end surface or on a lower-end surface of the printed wiring board, wherein at least an electronic part, for example, hybrid IC, chip-like parts, functional parts, such as SAW filter, sensor parts, etc.

Abstract: An electronic component device includes a printed wiring board having a side surface terminal portion formed of a recessed groove, filler, and plating conductor. The recessed groove is formed in a side surface, or a corner adjacent to the side surface, of a board and extending from an upper surface to a lower surface. The filler fills the groove and has a plating catalytic function. The plating conductor covers an exposed surface of the filler. A method of manufacturing the electronic component device is also disclosed.

Abstract: A printed wiring board (1) having a cavity (20) for mounting electronic parts therein and a method for manufacturing thereof, comprising: an upper wiring substrate (1A) having flat surfaces on both sides; a lower plate body (1B) being fixed on a reverse side surface of the upper wiring substrate, and being formed with the cavity (20) in a part thereof, for receiving an electronic part (30) within an inside thereof; conductor layers (3) provided on both side surfaces of the upper wiring substrate for mounting electronic parts thereon, by forming plated through-holes (7) or flat through-holes (7′), in particular within a region of the cavity on the reverse side surface thereof; and external electrodes (5) formed on side-end surface or on a lower-end surface of the printed wiring board, wherein at least an electronic part, for example, hybrid IC, chip-like parts, functional parts, such as SAW filter, sensor parts, etc.

Abstract: An ISDN switching system having facilities for testing an ISDN signal composed of B-channels and D-channels at least. The testing facilities can achieve a B-channel test and D-channel test selectively with simple construction by employing a converting unit in the system. The converting unit enables creation of a connection path between a test equipment and an object to be tested through an ISDN exchange and thus the ISDN signals for the test can be treated as usual ISDN signals. Thereby, the test equipment and the object can freely be connected to each other.