Patents by Inventor Hiroyuki Kusuhara

Hiroyuki Kusuhara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210340500
    Abstract: As a method for producing enterocytes derived from pluripotent stem cells and having functions corresponding to those of actual enterocytes, a method for producing enterocytes using an enterocyte differentiation medium containing a GSK3 inhibitor, and at least one selected from the group consisting of an activator of a hepatocyte growth factor receptor, an adrenal cortex hormone, calcitriol, and dimethyl sulfoxide is provided.
    Type: Application
    Filed: September 9, 2019
    Publication date: November 4, 2021
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, THE UNIVERSITY OF TOKYO, KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Shoen KUME, Nobuaki SHIRAKI, Kazuya MAEDA, Hiroyuki KUSUHARA, Masaya ISHIKAWA, Teruhiko WATANABE
  • Patent number: 8039586
    Abstract: A cerebral organic anion transporter OAT3 which is useful as a protein regulating the uptake/excretion of organic anionic substances in the brain; a nucleic acid having a base sequence encoding the same; and an antibody against the same. The amino acid sequence and the base sequence of the above OAT3 are shown in Sequence Listing in the description.
    Type: Grant
    Filed: September 20, 1999
    Date of Patent: October 18, 2011
    Assignee: J-Pharma Co., Ltd.
    Inventors: Hitoshi Endou, Takashi Sekine, Hiroyuki Kusuhara
  • Patent number: 5529979
    Abstract: Superconducting oxide material containing compound represented by the formula:(Tl.sub.(l-p-q) Bi.sub.p Pb.sub.q).sub.y .gamma..sub.z (.alpha..sub.(l-r) .beta..sub.r).sub.s Cu.sub.v O.sub.win which each of ".alpha." and ".gamma." is an element selected in IIa group of the periodic table, ".beta." is an element selected from a group comprising Na, K, Rb and Cs, "y", "z", "v", "w", "p", "q", "r" and "s" are numbers each satisfying respective range of 0.5.ltoreq.y.ltoreq.3.0, 0.5.ltoreq.z.ltoreq.6.0, 1.0.ltoreq.v, 5.0.ltoreq.w, 0.ltoreq.p.ltoreq.1.0, 0.ltoreq.q.ltoreq.1.0, 0.ltoreq.r.ltoreq.1.0 and 0.5.ltoreq.s.ltoreq.3.0.
    Type: Grant
    Filed: February 2, 1994
    Date of Patent: June 25, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuko Torii, Hiroyuki Kusuhara
  • Patent number: 5516752
    Abstract: Superconducting oxide material containing compound represented by the formula:(Tl.sub.(1-p-q) Bi.sub.p Pb.sub.q).sub.y .gamma..sub.z (.alpha..sub.(1-r) .beta..sub.r).sub.s Cu.sub.v O.sub.win which each of ".alpha." and ".gamma." is an element selected in IIa group of the periodic table, ".beta." is an element selected from a group comprising Na, K, Rb and Cs, "y", "z", "v", "w", "p", "q", "r" and "s" are numbers each satisfying respective range of 0.5.ltoreq.y.ltoreq.3.0, 0.5.ltoreq.z.ltoreq.6.0, 1.0.ltoreq.v, 5.0.ltoreq.w, 0.ltoreq.p.ltoreq.1.0, 0.ltoreq.q.ltoreq.1.0, 0.ltoreq.r.ltoreq.1.0 and 0.5.ltoreq.s.ltoreq.3.0.
    Type: Grant
    Filed: November 29, 1993
    Date of Patent: May 14, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuko Torii, Hiroyuki Kusuhara
  • Patent number: 5229845
    Abstract: An organic thin film and process for making the same, having electroconductivity, semiconductivity or superconductivity. The film is made of vapor-deposited bisethylenedithiatetrathiafulvalene (BEDT-TTF) by heating BEDT-TTF at a pressure of 10.sup.-2 Torr or below and at a temperature not higher than 260.degree. C. The temperature of the substrate on which the vapor is deposited is held at a lower temperature than the vapor. A thin film produced under these temperature and pressure conditions contains substantially no decomposition product. The electroconductivity of the film can be adjusted by selecting the substrate used for vapor-deposition of the film and the electron acceptor used as a dopant of the film. In order to achieve a vapor-deposited film with a high degree of orientation, silicon wafer is preferably used as a substrate for the film.
    Type: Grant
    Filed: June 26, 1990
    Date of Patent: July 20, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshinobu Ueba, Takayuki Mishima, Hiroyuki Kusuhara