Abstract: Embodiments provide a semiconductor device capable of being highly integrated. A semiconductor device includes a semiconductor substrate, a first insulating layer formed toward an inside of a semiconductor substrate from a main surface of the semiconductor substrate, and a transistor formed on the first insulating layer. the transistor has a first semiconductor layer formed on the first insulating layer to be insulated from the semiconductor substrate, a second insulating layer provided on a second region among of a first region, the second region, and a third region sequentially arranged in a first direction along the main surface of the first semiconductor layer, and a first conductive layer provided on the second insulating layer. a first contact is connected to the first region of the first semiconductor layer, a second contact is connected to the third region of the first semiconductor layer, and a third contact is connected to the first conductive layer.

Abstract: A semiconductor storage device includes a semiconductor substrate including a first region, a second region, and a third region, located apart from each other in such an order in a first direction in an element region. Each of the first to third regions including a source and/or drain region. The semiconductor storage device further includes a first conductor layer provided above the element region and having a first opening; a second conductor layer provided above the element region, having a second opening, and located apart from the first conductor layer in the first direction; a first contact, in the first opening, that is connected to the first region; a second contact, in the second opening, that is connected to the third region; a first memory cell connected to the first contact; and a second memory cell connected to the second contact.

Abstract: A semiconductor device includes first, second, third, and fourth active regions provided in an substrate, each of which includes a central portion, first and second portions provided at opposite sides of the central portion in a first direction, and third and fourth portions provided at opposite sides of the central portion in a second direction orthogonal to the first direction. An end portion of the first portion of the first active region faces a side portion of the fourth portion of the fourth active region, an end portion of which faces aside portion of the second portion of the second active region. An end portion of the second portion of the second active region faces a side portion of the third portion of the third active region, an end portion of which faces a side portion of the first portion of the first active region.

Abstract: Embodiments provide a semiconductor device capable of being highly integrated. A semiconductor device includes a semiconductor substrate, a first insulating layer formed toward an inside of a semiconductor substrate from a main surface of the semiconductor substrate, and a transistor formed on the first insulating layer. the transistor has a first semiconductor layer formed on the first insulating layer to be insulated from the semiconductor substrate, a second insulating layer provided on a second region among of a first region, the second region, and a third region sequentially arranged in a first direction along the main surface of the first semiconductor layer, and a first conductive layer provided on the second insulating layer. a first contact is connected to the first region of the first semiconductor layer, a second contact is connected to the third region of the first semiconductor layer, and a third contact is connected to the first conductive layer.

Abstract: A semiconductor device includes: two first semiconductor regions of a first conductivity type spaced apart from each other; a second semiconductor region of a second conductivity type provided between the two first semiconductor regions; a first insulator region surrounding the two first semiconductor regions and the second semiconductor region; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the second conductivity type, the fourth semiconductor region surrounding the third semiconductor region and the first insulator region and having an impurity concentration of the second conductivity type lower than an impurity concentration of the third semiconductor region; a second insulator region that surrounds the fourth semiconductor region; a conductor layer provided over the second semiconductor region; two first contact plugs; a second contact plug provided on the conductor layer; and a third contact plug provided on the third semiconductor region.

Abstract: A semiconductor device includes first, second, third, and fourth active regions provided in an substrate, each of which includes a central portion, first and second portions provided at opposite sides of the central portion in a first direction, and third and fourth portions provided at opposite sides of the central portion in a second direction orthogonal to the first direction. An end portion of the first portion of the first active region faces a side portion of the fourth portion of the fourth active region, an end portion of which faces aside portion of the second portion of the second active region. An end portion of the second portion of the second active region faces a side portion of the third portion of the third active region, an end portion of which faces a side portion of the first portion of the first active region.

Abstract: A semiconductor device includes a plurality of high-voltage insulated-gate field-effect transistors arranged in a matrix form on the main surface of a semiconductor substrate and each having a gate electrode, a gate electrode contact formed on the gate electrode, and a wiring layer which is formed on the gate electrode contacts adjacent in a gate-width direction to electrically connect the gate electrodes arranged in the gate-width direction. And the device includes shielding gates provided on portions of an element isolation region which lie between the transistors adjacent in the gate-width direction and gate-length direction and used to apply reference potential or potential of a polarity different from that of potential applied to the gate of the transistor to turn on the current path of the transistor to the element isolation region.

Abstract: A semiconductor device includes a plurality of high-voltage insulated-gate field-effect transistors arranged in a matrix form on the main surface of a semiconductor substrate and each having a gate electrode, a gate electrode contact formed on the gate electrode, and a wiring layer which is formed on the gate electrode contacts adjacent in a gate-width direction to electrically connect the gate electrodes arranged in the gate-width direction. And the device includes shielding gates provided on portions of an element isolation region which lie between the transistors adjacent in the gate-width direction and gate-length direction and used to apply reference potential or potential of a polarity different from that of potential applied to the gate of the transistor to turn on the current path of the transistor to the element isolation region.

Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate of a first conducting type. A pad is provided on the semiconductor substrate. An internal circuit is provided on the semiconductor substrate. An electrostatic discharge protection element is provided between the pad and the internal circuit. The electrostatic discharge protection element comprises a first well of a second conducting type, a second well of a first conducting type, and a first electrode layer of a second conducting type. The first well of a second conducting type is provided in a surface region of the semiconductor substrate. The second well of a first conducting type is provided inside the first well in the surface region of the semiconductor substrate. The first electrode layer of a second conducting type is provided inside the second well in the surface region of the semiconductor substrate.

Abstract: A semiconductor device includes: two first semiconductor regions of a first conductivity type spaced apart from each other; a second semiconductor region of a second conductivity type provided between the two first semiconductor regions; a first insulator region surrounding the two first semiconductor regions and the second semiconductor region; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the second conductivity type, the fourth semiconductor region surrounding the third semiconductor region and the first insulator region and having an impurity concentration of the second conductivity type lower than an impurity concentration of the third semiconductor region; a second insulator region that surrounds the fourth semiconductor region; a conductor layer provided over the second semiconductor region; two first contact plugs; a second contact plug provided on the conductor layer; and a third contact plug provided on the third semiconductor region.

Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate of a first conducting type. A pad is provided on the semiconductor substrate. An internal circuit is provided on the semiconductor substrate. An electrostatic discharge protection element is provided between the pad and the internal circuit. The electrostatic discharge protection element comprises a first well of a second conducting type, a second well of a first conducting type, and a first electrode layer of a second conducting type. The first well of a second conducting type is provided in a surface region of the semiconductor substrate. The second well of a first conducting type is provided inside the first well in the surface region of the semiconductor substrate. The first electrode layer of a second conducting type is provided inside the second well in the surface region of the semiconductor substrate.

Abstract: A semiconductor device includes a plurality of high-voltage insulated-gate field-effect transistors arranged in a matrix form on the main surface of a semiconductor substrate and each having a gate electrode, a gate electrode contact formed on the gate electrode, and a wiring layer which is formed on the gate electrode contacts adjacent in a gate-width direction to electrically connect the gate electrodes arranged in the gate-width direction. And the device includes shielding gates provided on portions of an element isolation region which lie between the transistors adjacent in the gate-width direction and gate-length direction and used to apply reference potential or potential of a polarity different from that of potential applied to the gate of the transistor to turn on the current path of the transistor to the element isolation region.

Abstract: A semiconductor device includes a plurality of high-voltage insulated-gate field-effect transistors arranged in a matrix form on the main surface of a semiconductor substrate and each having a gate electrode, a gate electrode contact formed on the gate electrode, and a wiring layer which is formed on the gate electrode contacts adjacent in a gate-width direction to electrically connect the gate electrodes arranged in the gate-width direction. And the device includes shielding gates provided on portions of an element isolation region which lie between the transistors adjacent in the gate-width direction and gate-length direction and used to apply reference potential or potential of a polarity different from that of potential applied to the gate of the transistor to turn on the current path of the transistor to the element isolation region.

Abstract: A semiconductor device includes a semiconductor substrate and a control electrode provided on a first surface side of the semiconductor substrate. The semiconductor substrate includes a first area on the first surface side and two second areas on the first surface side of the first area. The two second areas are arranged along the first surface. The control electrode provided above a portion of the first area between the two second areas. The first area includes a main portion and a peripheral edge portion extending outward from the main portion along the first surface. A depth of the peripheral edge portion from the first surface is shallower than a depth of the main portion from the first surface; and the peripheral edge portion has a concentration of second conductivity type impurities lower than a concentration of the second conductivity type impurities at a surface of the main portion.

Abstract: A memory device includes a first interconnect extending in a first direction, a first and a second semiconductor members extending in a second direction, a first and a second gate lines extending in a third direction, a second and a third interconnects extending in the second direction. The first and the second semiconductor members are arranged along the first direction, with first ends in the second direction connected to the first interconnect. The second interconnect is connected to a second end in the second direction of the first semiconductor member. The third interconnect is connected to a second end in the second direction of the second semiconductor member. The distance between the first interconnect and the first gate line is longer than the distance between the first interconnect and the second gate line.

Abstract: A memory device includes a first interconnect extending in a first direction, a first and a second semiconductor members extending in a second direction, a first and a second gate lines extending in a third direction, a second and a third interconnects extending in the second direction. The first and the second semiconductor members are arranged along the first direction, with first ends in the second direction connected to the first interconnect. The second interconnect is connected to a second end in the second direction of the first semiconductor member. The third interconnect is connected to a second end in the second direction of the second semiconductor member. The distance between the first interconnect and the first gate line is longer than the distance between the first interconnect and the second gate line.

Abstract: A semiconductor device includes a semiconductor substrate and a control electrode provided on a first surface side of the semiconductor substrate. The semiconductor substrate includes a first area on the first surface side and two second areas on the first surface side of the first area. The two second areas are arranged along the first surface. The control electrode provided above a portion of the first area between the two second areas. The first area includes a main portion and a peripheral edge portion extending outward from the main portion along the first surface. A depth of the peripheral edge portion from the first surface is shallower than a depth of the main portion from the first surface; and the peripheral edge portion has a concentration of second conductivity type impurities lower than a concentration of the second conductivity type impurities at a surface of the main portion.

Abstract: A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.

Abstract: A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.

Abstract: A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.