Abstract: A thermoelectric module includes: a lower substrate; an upper substrate that is disposed above the lower substrate and faces the lower substrate; a plurality of p-type and n-type thermoelectric elements that are disposed between the lower substrate and the upper substrate; a first electrode that is disposed on an upper surface of the lower substrate and a lower surface of the upper substrate and forms a series circuit by alternately and sequentially connecting the p-type and n-type thermoelectric elements; and a second electrode that is provided on the lower substrate and connects a thermoelectric element at an end portion of the series circuit and a post. The post includes a post main body that is formed of titanium, and a titanium passive film that covers a side surface of the post main body.

Abstract: A thermoelectric module includes a substrate; a thermoelectric element; a bonding portion including an electrode that bonds the substrate and the thermoelectric element; an organic material film that covers a front surface of the bonding portion; and an inorganic material film that covers the organic material film.

Abstract: A device includes a master delay-lock loop (DLL) having a phase frequency detector connected in series with a charge pump that is to generate a control voltage. A slave DLL is coupled to the master DLL and has a delay line including a buffer to receive a slave clock and a series of delay cells coupled between the buffer and an output terminal that is to output a delay clock, the series of delay cells variably controlled by the control voltage. The master DLL and the slave DLL are powered by a power supply that experiences undershoot or overshoot in response to a load transient. A dummy load is coupled between the delay line of the slave DLL and an output of the power supply, the dummy load including an exclusive OR gate that receives, as inputs, a first output of the buffer and the delay clock.

Abstract: A thermoelectric module includes a substrate, an electrode provided on a first surface of the substrate, a thermoelectric element, and a first diffusion prevention layer disposed between the electrode and the thermoelectric element. The first diffusion prevention layer includes a first material having a lower ionization tendency than that of hydrogen.

Abstract: Provided is a thermoelectric module capable of further suppressing electrochemical migration with a simple structure. A thermoelectric module includes: a lower substrate; an upper substrate disposed above the lower substrate so as to be opposite to the lower substrate; a plurality of p-type thermoelectric elements and n-type thermoelectric elements disposed between the lower substrate and the upper substrate; first electrodes disposed on an upper surface of the lower substrate and a lower surface of the upper substrate, and sequentially connecting the p-type and n-type thermoelectric elements alternately to form a series circuit; and a second electrode that is provided on the lower substrate and connects a thermoelectric element at an end of the series circuit to a post, in which the post includes a post body formed of nickel, and a nickel passivation film covering a side surface of the post body.

Abstract: A thermoelectric generator unit includes: a case having a heating surface and a cooling surface; first to fourth thermoelectric generator modules housed in the case, the thermoelectric generator modules including a plurality of thermoelectric elements; a multilayer substrate including: a first layer including an interelement electrode for forming an output circuit configured to connect the thermoelectric elements; a second layer provided with a plurality of through holes penetrating therethrough from front to back; and a third layer including a plurality of bypass patterns electrically continuous with the through holes; and lead pins that penetrate through the case inward and outward, the lead pins having base ends connected to both ends of the output circuit on a surface of the first layer, the output circuit being defined in each of the thermoelectric generator modules.

Abstract: A thermoelectric power module which can be manufactured without spoiling solderability or joining strength when a thermoelectric element and an electrode are joined to each other by using solder, and in which electric resistance does not largely increase in long time use.

Abstract: A thermoelectric power module capable of suppressing diffusion of not only a material of a solder layer but also a material of a solder joint layer into a thermoelectric element, or suppressing oxidation of the thermoelectric element. The thermoelectric power module includes in sequence: a thermoelectric element consisting essentially of a thermoelectric material containing at least two kinds of elements of bismuth (Bi), tellurium (Te), antimony (Sb), and selenium (Se) as principal components; a first diffusion prevention layer consisting essentially of at least one of molybdenum (Mo) and tungsten (W); a second diffusion prevention layer consisting essentially of at least one of cobalt (Co), titanium (Ti), and an alloy or compound containing them as principal components; and a solder joint layer consisting essentially of at least one of nickel (Ni), tin (Sn), and an alloy or compound containing them as principal components.

Abstract: A thermoelectric power module capable of suppressing diffusion of not only a material of a solder layer but also a material of a solder joint layer into a thermoelectric element, or suppressing oxidation of the thermoelectric element. The thermoelectric power module includes in sequence: a thermoelectric element consisting essentially of a thermoelectric material containing at least two kinds of elements of bismuth (Bi), tellurium (Te), antimony (Sb), and selenium (Se) as principal components; a first diffusion prevention layer consisting essentially of at least one of molybdenum (Mo) and tungsten (W); a second diffusion prevention layer consisting essentially of at least one of cobalt (Co), titanium (Ti), and an alloy or compound containing them as principal components; and a solder joint layer consisting essentially of at least one of nickel (Ni), tin (Sn), and an alloy or compound containing them as principal components.

Abstract: A thermoelectric power module comprising: a thermoelectric element employing a bismuth-tellurium (Bi—Te) based thermoelectric material; at least one barrier layer disposed on the thermoelectric element; an electrode; an electrode protection layer disposed at least on one principal surface of the electrode; a solder layer having a side surface formed with a recess, the solder layer joining a first region of the electrode protection layer to the at least one barrier layer; and a coating film disposed on a side surface of the thermoelectric element, a side surface of the at least one barrier layer, and the side surface of the solder layer, the coating film covering a second region adjacent to the first region of the electrode protection layer and being filled into the recess of the solder layer.

Abstract: A thermoelectric generator unit includes: a case having a heating surface and a cooling surface; first to fourth thermoelectric generator modules housed in the case, the thermoelectric generator modules including a plurality of thermoelectric elements; a multilayer substrate including: a first layer including an interelement electrode for forming an output circuit configured to connect the thermoelectric elements; a second layer provided with a plurality of through holes penetrating therethrough from front to back; and a third layer including a plurality of bypass patterns electrically continuous with the through holes; and lead pins that penetrate through the case inward and outward, the lead pins having base ends connected to both ends of the output circuit on a surface of the first layer, the output circuit being defined in each of the thermoelectric generator modules.

Abstract: In an example embodiment, an analog-digital converter includes digital-analog converter, a comparator, and a register. The digital-analog converter is configured to output a differential voltage between a reference voltage and a voltage of an analog signal. The comparator is configured to output a comparison signal corresponding to the differential voltage output by the digital-analog converter.

Abstract: In an example embodiment, an analog-digital converter includes digital-analog converter, a comparator, and a register. The digital-analog converter is configured to output a differential voltage between a reference voltage and a voltage of an analog signal. The comparator is configured to output a comparison signal corresponding to the differential voltage output by the digital-analog converter.

Abstract: A thermoelectric power module capable of suppressing diffusion of not only a material of a solder layer but also a material of a solder joint layer into a thermoelectric element, or suppressing oxidation of the thermoelectric element. The thermoelectric power module includes in sequence: a thermoelectric element consisting essentially of a thermoelectric material containing at least two kinds of elements of bismuss (Bi), tellurium (Te), antimony (Sb), and selenium (Se) as principal components; a first diffusion prevention layer consisting essentially of at least one of molybdenum (Mo) and tungsten (W); a second diffusion prevention layer consisting essentially of at least one of cobalt (Co), titanium (Ti), and an alloy or compound containing them as principal components; and a solder joint layer consisting essentially of at least one of nickel (Ni), tin (Sn), and an alloy or compound containing them as principal components.

Abstract: A thermoelectric power module which can be manufactured without spoiling solderability or joining strength when a thermoelectric element and an electrode are joined to each other by using solder, and in which electric resistance does not largely increase in long time use.

Abstract: A thermoelectric power module capable of suppressing increase of heat-leakage between a heat exchanger at a higher temperature part and another heat exchanger at a lower temperature part while effectively preventing oxidation of a thermoelectric element, an electrode, and a joint layer for joining the thermoelectric element to the electrode, and preventing a short circuit due to extraneous materials, dew condensation, and so on.

Abstract: An adjusting apparatus sets a designated value of a current source circuit to be a predetermined value, and causes discharging of a capacitor to end by switching a switch to a discharging side when the capacitor is not being charged by current output from a switching power source circuit. After the discharging of the capacitor ends and the designated value is set, the adjusting apparatus causes the capacitor to be charged by switching the switch to a charging side. The adjusting apparatus further measures a time period from the time when the switch is switched to the charging side until an electric potential difference of the capacitor exceeds a threshold value. Based on the measured time period and the predetermined value, the adjusting apparatus calculates the designated value such that the measured time period is a predetermined time period.

Abstract: An adjusting apparatus sets a designated value of a current source circuit to be a predetermined value, and causes discharging of a capacitor to end by switching a switch to a discharging side when the capacitor is not being charged by current output from a switching power source circuit. After the discharging of the capacitor ends and the designated value is set, the adjusting apparatus causes the capacitor to be charged by switching the switch to a charging side. The adjusting apparatus further measures a time period from the time when the switch is switched to the charging side until an electric potential difference of the capacitor exceeds a threshold value. Based on the measured time period and the predetermined value, the adjusting apparatus calculates the designated value such that the measured time period is a predetermined time period.

Abstract: A reference voltage circuit includes a first amplifier, a first load device and a first PN junction device, second and third load devices and a second PN junction device, an offset voltage reduction circuit, a coupling node potential takeout circuit, and an area adjustment circuit. The offset voltage reduction circuit is configured to reduce an offset voltage between the first and second input terminals at the first amplifier, and the coupling node potential takeout circuit is configured to take out potentials of the first and second coupling nodes. The area adjustment circuit is configured to adjust an area of the second PN junction device in accordance with the potentials of the first and second coupling nodes which are taken out by the coupling node potential takeout circuit.

Abstract: A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is <11-20>. A trench is formed on the SiC to have a stripe structure extending toward a <11-20> direction. An SiC epitaxial layer is formed on an inside surface of the trench.