Abstract: To suppress occurrence of defects in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.

Abstract: To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.

Abstract: A manufacturing method of semiconductor device capable of suppressing or preventing formation of a dissolution region of composition atoms such as a pit in a semiconductor wafer. After oxide film on a semiconductor wafer is removed by dipping plural pieces of the semiconductor wafer accommodated in a carrier into chemical liquid containing fluoro acid, chemical liquid adhering to the semiconductor wafer is washed out of the semiconductor wafer by rinse processing using de-ionized water. At least in the rinse processing of this wet processing, light is projected to the semiconductor wafer from a light source provided on a wet etching apparatus. Adjusting electromotive force caused by battery reaction at a pn junction of the semiconductor wafer by adjusting the state of the light L enables generation of a pit in the semiconductor wafer.

Abstract: To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.

Abstract: A magneto resistive sensor having a GMR magnetic laminated film is disclosed. The GMR magnetic laminated film comprises a plurality of magnetic thin layers having a NiCoFeB composition alternately laminated with a nonmagnetic thin layer, such as copper layer. Since the magnetic thin layer contains B in its composition, the GMR magnetic laminated film can stand in magneto resistance ratio (&Dgr;R/R %) under a high temperature of up to 250 degrees centigrade. By the reason, electric wiring can be connected by a lead-free solder to assemble a magnetic resistive sensor for a magnetic rotary encoder. The thermal resistance variation and the magneto resistance ratio are further improved when a NiFeCr underlayer is used under the GMR magnetic laminated film.

Abstract: To provide a bearing sensor having a thin plane coil for applying a biasing magnetic field and at least one magneto resistive element pair (a first magneto resistive thin plate and a second magneto resistive thin plate) crossing opposed conductor sides of the coil. The plane coil has at least one pair of opposed conductor sides (a first side and a second side). The first magneto resistive thin plate and the first side cross one another at an angle more than 30 degrees and less than 90 degrees. The second magneto resistive thin plate and the second side cross one another at an angle more than 30 degrees and less than 90 degrees. While biasing magnetic fields in opposite directions are applied to the magneto resistive thin plates, respectively, intermediate potentials of the magneto resistive element pair are measured to determine bearings based on the difference between the intermediate potentials.

Abstract: An inductive magnetic head used for high-density recording having such a construction that prevents magnetic leakage near a magnetic pole at the tip of the magnetic core and reduces magnetic resistance or reluctance at an upper magnetic core front portion is disclosed. An upper magnetic core facing a lower magnetic core with a non-magnetic gap layer interposed therebetween comprises an upper magnetic core front portion near a magnetic pole, and an upper magnetic core rear portion at the rear portion. The front portion has a parallel portion having a width almost equal to the track width extending from the magnetic pole toward the rear end of the front portion, and a sector at the rear of an apex. The front portion has a non-magnetic gap with the lower magnetic core at an area between the magnetic pole and the apex, and the gap between the front portion and the lower magnetic core is wider than the magnetic gap at the rear of the apex.

Abstract: A magneto resistive sensor having a GMR magnetic laminated film is disclosed. The GMR magnetic laminated film comprises a plurality of magnetic thin layers having a NiCoFeB composition alternately laminated with a nonmagnetic thin layer, such as copper layer. Since the magnetic thin layer contains B in its composition, the GMR magnetic laminated film can stand in magneto resistance ratio (&Dgr;R/R %) under a high temperature of up to 250 degrees centigrade. By the reason, electric wiring can be connected by a lead-free solder to assemble a magnetic resistive sensor for a magnetic rotary encoder. The thermal resistance variation and the magneto resistance ratio are further improved when a NiFeCr underlayer is used under the GMR magnetic laminated film.

Abstract: An inductive magnetic head used for high-density recording having such a construction that prevents magnetic leakage near a magnetic pole at the tip of the magnetic core and reduces magnetic resistance or reluctance at an upper magnetic core front portion is disclosed. An upper magnetic core facing a lower magnetic core with a non-magnetic gap layer interposed therebetween comprises an upper magnetic core front portion near a magnetic pole, and an upper magnetic core rear portion at the rear portion. The front portion has a parallel portion having a width almost equal to the track width extending from the magnetic pole toward the rear end of the front portion, and a sector at the rear of an apex. The front portion has a nonmagnetic gap with the lower magnetic core at an area between the magnetic pole and the apex, and the gap between the front portion and the lower magnetic core is wider than the magnetic gap at the rear of the apex.