Abstract: The present invention provides a method for improving or controlling the plasma half-life and/or bio-availability of blood coagulation factor IX (FIX), the method comprising modifying the GLA domain. Examples of such modifications include: (i) non-covalent bonding of a GLA-domain-recognizing antibody or an antibody fragment thereof to the GLA domain; (ii) reduced number of Gla residues in the GLA domain, in comparison to that of a native FIX; (iii) either or both of deletion of one or more glutamic acid residues in the GLA domain and substitution of one or more glutamic acid residues in the GLA domain with another amino acid; and (iv) deletion of a part or all of the GLA domain. The present invention also provides a FIX with improved pharmacokinetics which carries such modifications, a pharmaceutical composition containing the FIX as an active ingredient, a method for producing the FIX, and such.

Abstract: A diode formed by a polysilicon layer is disposed between a field oxide film and an interlayer insulating film, in a semiconductor substrate, at a front surface of the semiconductor substrate. One resist mask is used to form contact holes of the interlayer insulating film and contact trenches and a p+-type region of the polysilicon layer. The contact trenches are continuously formed from bottoms of the contact holes, respectively, in a depth direction. A low-resistance contact between the p+-type region and an anode electrode is formed at least at a bottom of the contact trench. During the formation of the p+-type region, while a p-type impurity is ion-implanted in an inner wall of the contact trench 3b, an n-type cathode region maintains an n-type conductivity thereof and a contact with a cathode electrode is formed at sidewalls of the contact trench.

Abstract: A plasma observation system includes a plasma processing apparatus which includes a processing container in which a substrate is processed with plasma, and a plurality of observation windows each capable of observing an emission state of the plasma in the processing container; and a measuring device including a light receiver configured to receive a plurality of light beams intersecting in the processing container through a plurality of observation windows, and a controller configured to specify an observation point of the plasma and determine a state of the plasma at the observation point based on the plurality of light beams received by the light receiver.

Abstract: A plasma processing apparatus includes: a processing container; a ceiling wall forming a part of the processing container and including an opening; and a transmission window configured to close the opening, wherein the opening under the transmission window is formed as a recess portion, wherein the recess portion is a supply port for supplying electromagnetic waves from the transmission window into the processing container, wherein first gas supply holes are formed on a lower surface of the ceiling wall, and wherein second gas supply holes are formed on an inner surface of the recess portion.

Abstract: A semiconductor manufacturing apparatus includes: a processing container that accommodates a substrate holder that holds a plurality of substrates in a shelf shape; a gas supply that supplies a processing gas into the processing container; and a microwave introducer that generates a plasma from the processing gas. The microwave introducer includes: a rectangular waveguide provided along a length direction of the processing container and including a plurality of slots that radiates microwaves; and a phase controller that is provided at an end of the rectangular waveguide and controls a phase of the microwaves propagating in the rectangular waveguide.

Abstract: There is provided a plasma source comprising a first chamber configured to form a flat first plasma generation space, and having a first wall and a second wall, a gas supply configured to supply gas into the first chamber, an electromagnetic wave supply having a dielectric window that is provided in an opening provided in the first wall to face the first plasma generation space, and configured to supply an electromagnetic wave through the dielectric window into the first chamber. The plasma source comprises a plasma supply configured to supply radicals contained in plasma that is generated from the gas supplied into the first chamber by the electromagnetic wave to an outside of the first chamber, and a plasma ignition source provided in the first chamber to protrude from an inner wall of the second wall facing the dielectric window and to be separated from the dielectric window.

Abstract: A directional coupler includes: a hollow coaxial line including a central conductor forming a main line and an outer conductor surrounding the central conductor and having an opening formed therein; a dielectric substrate covering the opening and provided with film-shaped ground conductors, wherein a film-shaped ground conductor covers a rear surface of the dielectric substrate facing the central conductor via the opening and a film-shaped ground conductor covers a front surface of the dielectric substrate, respectively, and are grounded; and a coupling line provided on the rear surface of the dielectric substrate in a region surrounded by the ground conductor formed on the rear surface and serving as an auxiliary line, wherein the ground conductor formed on the front surface is provided with a conductor-removed portion in which a portion of a conductor film in a region facing the coupling line via the dielectric substrate is removed.

Abstract: An apparatus for heat-treating a substrate includes: a stage where the substrate is disposed; a heating part configured to change an output; a first temperature measurement part configured to measure a temperature at which the substrate is heated; a second temperature measurement part configured to measure the temperature, and having a level of measurement accuracy which is lower than that of the first temperature measurement part in a first temperature region and is higher than that of the first temperature measurement part in a second temperature region; a temperature calculator configured to calculate a weighted average temperature of the temperatures measured by the first and second temperature measurement parts if a reference temperature is in a temperature range between the first and second temperatures, and configured to change a weight of the weighted average temperature; and a controller configured to control the output based on the weighted average temperature.

Abstract: An insulated-gate semiconductor device includes: a carrier transport layer of a first conductivity-type made of a semiconductor material having a wider band gap than silicon; a lower buried region of a second conductivity-type buried in an upper portion of the carrier transport layer; a plurality of upper buried regions of the second conductivity-type dispersedly deposited on the lower buried region; an injection control region of the second conductivity-type deposited on the upper buried regions; and an insulated gate structure controlling a surface potential of the injection control region adjacent to a side wall of a trench, wherein the trench has a stripe-like shape, the lower buried region includes a first stripe provided separately from the trench, and the respective upper buried regions are provided at intervals on the first stripe.

Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

Abstract: A directional coupler includes: a hollow coaxial line including a central conductor forming a main line and an outer conductor surrounding the central conductor and having an opening formed therein; a dielectric substrate covering the opening and provided with film-shaped ground conductors, wherein a film-shaped ground conductor covers a rear surface of the dielectric substrate facing the central conductor via the opening and a film-shaped ground conductor covers a front surface of the dielectric substrate, respectively, and are grounded; and a coupling line provided on the rear surface of the dielectric substrate in a region surrounded by the ground conductor formed on the rear surface and serving as an auxiliary line, wherein the ground conductor formed on the front surface is provided with a conductor-removed portion in which a portion of a conductor film in a region facing the coupling line via the dielectric substrate is removed.

Abstract: A plasma observation system includes a plasma processing apparatus which includes a processing container in which a substrate is processed with plasma, and a plurality of observation windows each capable of observing an emission state of the plasma in the processing container; and a measuring device including a light receiver configured to receive a plurality of light beams intersecting in the processing container through a plurality of observation windows, and a controller configured to specify an observation point of the plasma and determine a state of the plasma at the observation point based on the plurality of light beams received by the light receiver.

Abstract: An apparatus for heat-treating a substrate includes: a stage where the substrate is disposed; a heating part configured to change an output; a first temperature measurement part configured to measure a temperature at which the substrate is heated; a second temperature measurement part configured to measure the temperature, and having a level of measurement accuracy which is lower than that of the first temperature measurement part in a first temperature region and is higher than that of the first temperature measurement part in a second temperature region; a temperature calculator configured to calculate a weighted average temperature of the temperatures measured by the first and second temperature measurement parts if a reference temperature is in a temperature range between the first and second temperatures, and configured to change a weight of the weighted average temperature; and a controller configured to control the output based on the weighted average temperature.

Abstract: An insulated-gate semiconductor device includes: a carrier transport layer of a first conductivity-type made of a semiconductor material having a wider band gap than silicon; a lower buried region of a second conductivity-type buried in an upper portion of the carrier transport layer; a plurality of upper buried regions of the second conductivity-type dispersedly deposited on the lower buried region; an injection control region of the second conductivity-type deposited on the upper buried regions; and an insulated gate structure controlling a surface potential of the injection control region adjacent to a side wall of a trench, wherein the trench has a stripe-like shape, the lower buried region includes a first stripe provided separately from the trench, and the respective upper buried regions are provided at intervals on the first stripe.

Abstract: The present invention provides a method for improving or controlling the plasma half-life and/or bio-availability of blood coagulation factor IX (FIX), the method comprising modifying the GLA domain. Examples of such modifications include: (i) non-covalent bonding of a GLA-domain-recognizing antibody or an antibody fragment thereof to the GLA domain; (ii) reduced number of Gla residues in the GLA domain, in comparison to that of a native FIX; (iii) either or both of deletion of one or more glutamic acid residues in the GLA domain and substitution of one or more glutamic acid residues in the GLA domain with another amino acid; and (iv) deletion of a part or all of the GLA domain. The present invention also provides a FIX with improved pharmacokinetics which carries such modifications, a pharmaceutical composition containing the FIX as an active ingredient, a method for producing the FIX, and such.

Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

Abstract: A plasma processing apparatus (1) includes a processing container (2) and a microwave introduction device (5) having a plurality of microwave introduction modules (61). A microwave is introduced for each of the plurality of microwave introduction modules (61), and S-parameters for each of combinations of the plurality of microwave introduction modules (61) are obtained based on the introduced microwave and a reflected microwave reflected from the processing container (2) into the plurality of microwave introduction modules (61).

Abstract: A power combiner includes a main body composed of outer and inner conductors, a plurality of power introduction ports configured to introduce electromagnetic wave powers supplied through power supply lines into the main body, a power combining antenna configured to radiate electromagnetic waves to a space between the outer and inner conductors such that the powers are combined, and an output port through which the combined electromagnetic wave is outputted from the main body. The power combining antenna includes a plurality of antenna members, each of which has a first pole and a second pole that is in contact with the inner conductor, and a reflection part configured to reflect the electromagnetic waves.

Abstract: A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

Abstract: A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is ?0, a length of the closed circuit is n?0±?, where n is a positive integer and ? is a fine-tuning component including 0.