Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A solid-state imaging device includes pixels respectively having photoelectric conversion units and arranged in matrix in basic pattern units, and an optical member arranged on the incidence side of incident light than the pixels and having constituent elements respectively corresponding to the pixels. The pixels include first, second and third wavelength range light pixels. Each basic pattern is comprised of a combined arrangement pattern of the wavelength range light pixels. Misregistration constituent elements with the occurrence of misregistration exist in the constituent elements. The misregistration increases toward the misregistration constituent elements separated from a center position of a pixel array of the pixels.

Abstract: A solid-state imaging device includes pixels respectively having photoelectric conversion units and arranged in matrix in basic pattern units, and an optical member arranged on the incidence side of incident light than the pixels and having constituent elements respectively corresponding to the pixels. The pixels include first, second and third wavelength range light pixels. Each basic pattern is comprised of a combined arrangement pattern of the wavelength range light pixels. Misregistration constituent elements with the occurrence of misregistration exist in the constituent elements. The misregistration increases toward the misregistration constituent elements separated from a center position of a pixel array of the pixels.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: A solid-state imaging device includes pixels respectively having photoelectric conversion units and arranged in matrix in basic pattern units, and an optical member arranged on the incidence side of incident light than the pixels and having constituent elements respectively corresponding to the pixels. The pixels include first, second and third wavelength range light pixels. Each basic pattern is comprised of a combined arrangement pattern of the wavelength range light pixels. Misregistration constituent elements with the occurrence of misregistration exist in the constituent elements. The misregistration increases toward the misregistration constituent elements separated from a center position of a pixel array of the pixels.

Abstract: A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.

Abstract: Method of manufacturing semiconductor device including forming inter-layer insulating film on semiconductor substrate. First metal film is formed on inter-layer insulating film. First resist is formed on first metal film and patterned. Anisotropic etching performed on first metal film using first resist as mask. First resist is removed and second metal film is formed on inter-layer insulating film to cover remaining first metal film. Second resist is formed on second metal film in area where first metal film exists on inter-layer insulating film and part of area where first metal film does not exist. Anisotropic etching is performed on second metal film using second resist as mask and bonding pad having first metal film and second metal film, and upper layer wiring having second metal film and not first metal film. Second resist is removed. Surface protection film covering bonding pad is formed. Pad opening is formed on bonding pad.

Abstract: A method of manufacturing a semiconductor device comprises: a step of forming an inter-layer insulating film on a semiconductor substrate; a step of forming a first metal film on the inter-layer insulating film; a step of forming a first resist on the first metal film and patterning the first resist; a step of performing anisotropic etching on the first metal film using the first resist as a mask; a step of removing the first resist; a step of forming a second metal film on the inter-layer insulating film so as to cover the remaining first metal film; a step of forming a second resist on the second metal film in an area where the first metal film exists on the inter-layer insulating film and part of an area where the first metal film does not exist; a step of performing anisotropic etching on the second metal film using the second resist as a mask and forming a bonding pad having the first metal film and the second metal film and an upper layer wiring which has the second metal film, yet not the first metal f