Abstract: There is provided a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting-substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.

Abstract: There is a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting-substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.

Abstract: There is provided a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.

Abstract: A membrane for use in an X-ray mask composed of a compound comprising at least three kinds of elements of boron (B), silicon (Si) and nitrogen (N) in which the content of silicon in the compound is at least 15 atomic percent, but less than 100 atomic percent, and the atomic ratio of Si/(B+Si) in the compound is at least 0.2, but less than one. The membrane is synthesized from source gases including at least the foregoing three kinds of elements by chemical reaction under such conditions that the ratio of nitrogen to boron plus silicon is at least one in the source gases and thereby depositing a film of the compound onto a substrate. Since the membrane thus prepared has a high transmittance in the visible region and X-ray and their residual stress can be readily controlled by adjusting the conditions for the formation of the membrane, it is suitable for the preparation of X-ray masks.

Abstract: The specification discloses a polycrystalline boron nitride of high purity and high density consisting essentially of rhombohedral crystals in which the three-fold rotation axes, parallel to the c-axis in the notation of hexagonal crystal system, of the crystals have a preferred orientation. The polycrystalline rhombohedral boron nitride can be obtained as bulk or thin film articles with desired shapes by chemical vapor deposition including the steps of introducing a source gas of boron and a source gas into a reactor containing a heated substrate and depositing boron nitride onto the heated substrate, wherein a diffusion layer of the source gas of nitrogen and/or the carrier gas is formed around the substrate. The polycrystalline rhombohedral boron nitride such obtained is very useful in applications such as crucibles for melting semiconductors, various jigs for high temperature services, high-frequency insulator, microwave transmission window and source material of boron for semiconductor.

Abstract: A transparent BN-type ceramic material comprising 10 to 40 wt. % of boron (B), 35 to 55 wt. % of nitrogen (N) and 3 to 40 wt. % of silicon (Si) as the main component elements, and 1 to 10 wt. % of sub-component elements, with the property of not being crystallized by heat treatment at 1600.degree. C. for one hour, and a method of producing the above ceramic material by reacting a boron-containing compound, a nitrogen-containing compound and a silicon-containing compound at deposition temperatures in a range of more than 1300.degree. C. to less than 1700.degree. C. with the total gas pressure within a reaction furnace maintained in the range from 10 Torr to 100 Torr by use of a chemical vapor deposition method are disclosed.

Abstract: Boron nitride containing titanium nitride in an amount of 0.05 to 10 wt. % which is produced at a relatively low temperature, utilizing a chemical vapor deposition technique. In the deposition process, boron, titanium and nitrogen source gases are introduced into an evacuated reactor together with a carrier and/or diluent gas and contacted with a heated substrate previously mounted in the reactor, whereby boron nitride with titanium nitride is deposited onto the substrate. The deposit thus obtained has a high density, a significantly improved heat-shielding ability, a high degree of anisotropy with respect to thermal diffusivity and a high chemical stability. By using such anisotropic boron nitride with BN ceramics, very useful BN type composite ceramics can be produced.

Abstract: A crosslinked foam having an expansion ratio of 25 to 60 which comprises a composition containing 100 parts by weight of a resin component consisting of an ethylenevinyl acetate copolymer or a mixture thereof with a thermoplastic resin and 50 to 500 parts by weight of an inorganic powder material.

Abstract: The composition of this invention is a polyethylene base resin composition containing a high concentration of an inorganic material, which has high flame retardancy and sufficient tensile elongation for practical application and is adapted to be used as a raw material for a field in which high flame retardancy is demanded such as coatings for flame retardant wires and cables and flame retardant raw material of foamed product. This composition mainly consists of a resin component formed of 10 to 75 parts by weight of polyethylene having a density ranging between 0.910 and 0.945 (g/cm.sup.3) and a melt index ranging from 0.01 to 2.0 (g/10 min) and 90 to 25 parts by weight of an ethylene-base copolymer and further contains 80 to 250 parts by weight of powder of a hydrated metal oxide on the basis of 100 parts by weight of the resin component of said polyethylene base resin composition.