Abstract: A method of measuring a film thickness is provided. A first semiconductor layer and a second semiconductor layer may be mainly constituted of a same material and may be of a same conductivity type. A film thickness measuring device may be configured such that light emitted from a light source is reflected by a semiconductor substrate fixed to a stage after having been reflected by a half mirror, and the light reflected by the semiconductor substrate passes through the half mirror and enters a photodetector. The light reflected by the semiconductor substrate may include first reflected light reflected by a surface of the second semiconductor layer and second reflected light reflected by an interface between the second semiconductor layer and the first semiconductor layer. A film thickness calculator may calculate the film thickness of the second semiconductor layer based on the light detected by the photodetector.

Abstract: A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.

Abstract: A switching element may include: a gallium oxide substrate constituted of a gallium oxide crystal; and a plurality of gate electrodes facing the gallium oxide substrate via a gate insulating films. An upper surface of the gallium oxide substrate is parallel to a (010) plane of the gallium oxide crystal, and in a plan view of the upper surface of the gallium oxide substrate, a longitudinal direction of each gate electrode intersects a direction along which a (100) plane of the gallium oxide crystal extends.

Abstract: A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.

Abstract: A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.

Abstract: A method of forming a gallium oxide film is provided, and the method may include supplying mist of a material solution comprising gallium atoms and chlorine atoms to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, in which a molar concentration of chlorine in the material solution is equal to or more than 3.0 times and equal to or less than 4.5 times a molar concentration of gallium in the material solution.

Abstract: A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to grow a film on the surface of the substrate, and the film formation apparatus may include: a furnace configured to house the substrate so as to heat the substrate; and a mist supply apparatus configured to supply the mist of the solution to the furnace, in which the film formation apparatus includes a portion configured to be exposed to the mist, and at least a part of the portion of the film formation apparatus is constituted of a material comprising boron nitride.

Abstract: A film formation apparatus configured to supply mist of a solution to a substrate to epitaxially grow a film on the substrate and including: a furnace housing the substrate; a mist generation tank configured to generate the mist therein; a mist supply path connecting the tank and furnace; a carrier gas supply path configured to supply carrier gas into the tank; a diluent gas supply path configured to supply diluent gas into the mist supply path; and a gas flow rate controller configured to control flow rates of the carrier and diluent gas. The mist in the tank flows to the mist supply path with the carrier gas, the mist in the mist supply path flows to the furnace with the carrier and diluent gas, and the controller is configured to decrease the flow rate of the diluent gas when increasing the flow rate of the carrier gas.

Abstract: A photocatalyst material (1A) in accordance with an aspect of the present invention includes a core particle (2) and a shell layer (3) with which a whole surface of the core particle (2) is covered. The core particle (2) contains at least a tungsten oxide, and the shell layer (3) is constituted by a titanium oxide.

Abstract: A film forming method of forming a gallium oxide film doped with tin on a substrate is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein a gallium compound and a tin chloride (IV) pentahydrate are dissolved in the solution.

Abstract: A film forming method of forming an oxide film on a substrate, wherein the oxide film has germanium doped therein and comprises a property of a conductor or a semiconductor, is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein an oxide film material including a constituent element of the oxide film and an organic germanium compound may be dissolved in the solution.

Abstract: To provide a photocatalyst material having alkaline resistance and showing less deterioration in photocatalyst performance due to a poisoning effect and to provide a method for producing the photocatalyst material, a photocatalyst material (1A) according to one embodiment of the present invention includes: core particles (2) containing tungsten oxide; a promoter (4) formed on the surface of the core particles (2); and a shell layer (3) made of titanium oxide and covering the entire surface of both the core particles (2) and the promoter (4).

Abstract: A film forming method of forming a gallium oxide film doped with fluorine on a base body includes supplying a mist of a solution in which a gallium compound and a fluorine compound are dissolved to a surface of the base body while heating the base body. In this film forming method, the gallium oxide film doped with fluorine is generated on the surface of the base body. In this film forming method, the gallium oxide film doped with fluorine can be suitably formed on the surface of the base body.

Abstract: To provide a photocatalyst material having alkaline resistance and showing less deterioration in photocatalyst performance due to a poisoning effect and to provide a method for producing the photocatalyst material, a photocatalyst material (1A) according to one embodiment of the present invention includes: core particles (2) containing tungsten oxide; a promoter (4) formed on the surface of the core particles (2); and a shell layer (3) made of titanium oxide and covering the entire surface of both the core particles (2) and the promoter (4).

Abstract: A photocatalyst material (1A) in accordance with an aspect of the present invention includes a core particle (2) and a shell layer (3) with which a whole surface of the core particle (2) is covered. The core particle (2) contains at least a tungsten oxide, and the shell layer (3) is constituted by a titanium oxide.