Abstract: A semiconductor module includes: a semiconductor element; a housing for housing the semiconductor element, the housing including a terminal hole; a terminal in the terminal hole and being electrically connected to the semiconductor element; a holding member bonded by an adhesive to the housing; and a potting material in the housing, in which the terminal includes a plate-shaped leg between the holding member and the housing including a recess for accommodating the leg, the recess has a depth greater than a thickness of the leg, in the recess, a portion of the leg in a direction of length of the leg is provided with a passage for the adhesive, the passage being across the leg in a direction of thickness of the leg, and a width of the passage is greater than a difference between the depth of the recess and the thickness of the leg.

Abstract: A semiconductor module includes at least, a conductive pattern on the insulating substrate; a first semiconductor element on the conductive pattern, a second semiconductor element on the conductive pattern, a first power collecting portion connected to a first output electrode of the first semiconductor element with a first line; and a second power collecting portion connected to a second output electrode of the second semiconductor element with a second line. Each of the first and second semiconductor elements includes both a switching element and a diode. The conductive pattern is provided between the first power collecting portion and the second power collecting portion. A current path length from a first output electrode of the first semiconductor element to the first power collecting portion and a current path length from a second output electrode of the second semiconductor element to the second power collecting portion are equal to each other.

Abstract: Provided is a semiconductor module including: a reverse conducting first switching element which is provided on one of an upper arm and a lower arm; a reverse conducting second switching element which is provided on another of the upper arm and the lower arm; a first path member which is electrically connected to one of a gate electrode and an emitter electrode of the first switching element; and a second path member which is electrically connected to another of the gate electrode and the emitter electrode of the first switching element. The first path member is provided to be closer to the second switching element than the second path member, and current flowing through the first path member flows in antiparallel with a reverse recovery current of an arm provided with the second switching element.

Abstract: A semiconductor device including an insulating circuit board. The insulating circuit board has an insulating plate, a plurality of circuit patterns disposed on a front surface of the insulating plate, any adjacent two of the circuit patterns having a gap therebetween, each circuit pattern having at least one corner, each corner being in a corner area that covers the corner and a portion of each gap adjacent to the corner, and a buffer material containing resin, applied at a plurality of corner areas, to fill the gaps in the plurality of corner areas.

Abstract: An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Abstract: An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Abstract: A semiconductor device including an insulating circuit board. The insulating circuit board has an insulating plate, a plurality of circuit patterns disposed on a front surface of the insulating plate, any adjacent two of the circuit patterns having a gap therebetween, each circuit pattern having at least one corner, each corner being in a corner area that covers the corner and a portion of each gap adjacent to the corner, and a buffer material containing resin, applied at a plurality of corner areas, to fill the gaps in the plurality of corner areas.

Abstract: An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Abstract: An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Abstract: A semiconductor device includes a heat-dissipating base, a first conductive layer bonded to the top surface of the heat-dissipating base, an AlN insulating substrate bonded to the top surface of the first conductive layer, and an electrode terminal having one edge bending to form a bonding edge whose bottom surface faces the top surface of the second conductive layer and is solid-state bonded to a portion of the top surface of the second conductive layer. The crystal grain diameter at the bonded interface of the second conductive layer and electrode terminal is less than or equal to 1 ?m, and indentations from the ultrasonic horn are left in the top surface of the bonding edge.

Abstract: A semiconductor device includes a heat-dissipating base, a first conductive layer bonded to the top surface of the heat-dissipating base, an AlN insulating substrate bonded to the top surface of the first conductive layer, and an electrode terminal having one edge bending to form a bonding edge whose bottom surface faces the top surface of the second conductive layer and is solid-state bonded to a portion of the top surface of the second conductive layer. The crystal grain diameter at the bonded interface of the second conductive layer and electrode terminal is less than or equal to 1 ?m, and indentations from the ultrasonic horn are left in the top surface of the bonding edge.