Patents by Inventor Hiroyuki Odagawa

Hiroyuki Odagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8976360
    Abstract: To provide a surface plasmon sensor for measuring a refractive index by which a refractive index can be easily measured with high accuracy without relying on an absorption curve. The surface plasmon sensor includes: a reflection plate which includes a metal layer having a periodic structure and on which a specimen is arranged; a light source which irradiates an incident light to the reflection plate; a light receiving part which receives a reflected light reflected on the reflection plate; and a measurement part which measures a refractive index of the specimen based on phase information on two kinds of waves which are included in reflected light reflected on a periodic structure surface and differ in polarization direction.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: March 10, 2015
    Assignee: Institute of National Colleges of Technology, Japan
    Inventors: Toyonori Matsuda, Hiroyuki Odagawa
  • Publication number: 20140029006
    Abstract: To provide a surface plasmon sensor for measuring a refractive index by which a refractive index can be easily measured with high accuracy without relying on an absorption curve. The surface plasmon sensor includes: a reflection plate which includes a metal layer having a periodic structure and on which a specimen is arranged; a light source which irradiates an incident light to the reflection plate; a light receiving part which receives a reflected light reflected on the reflection plate; and a measurement part which measures a refractive index of the specimen based on phase information on two kinds of waves which are included in reflected light reflected on a periodic structure surface and differ in polarization direction.
    Type: Application
    Filed: January 26, 2012
    Publication date: January 30, 2014
    Applicant: INSTITUTE OF NATIONAL COLLEGES OF TECHNOLOGY ,JAPAN
    Inventors: Toyonori Matsuda, Hiroyuki Odagawa
  • Patent number: 6373353
    Abstract: In order to provide a transducer suitable for an anisotropic substrate having the NSPUDT property, on the anisotropic piezoelectric substrate being cut to have the NSPUDT property, there is formed a transducer structure having an exciting electrode structure (21) and a reflector structure (22). When &lgr; is a wavelength of a fundamental surface acoustic wave, said exciting electrode structure (21) includes a positive electrode (23) having a plurality of electrode fingers arranged at a pitch &lgr; and a negative electrode (24) having at least one electrode finger interdigitally arranged between said electrode fingers of the positive electrode with a center distance of &lgr;/2. The reflector transducer (22) includes a plurality of electrode fingers arranged with a center distance of &lgr;/2, and a distance Lg between said exciting electrode structure (21) and the reflector structure (22) is set to Lg=(2n+1)&lgr;/4 (n being a positive integer).
    Type: Grant
    Filed: November 18, 1997
    Date of Patent: April 16, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Masao Takeuchi, Kazuhiko Yamanouchi, Hiroyuki Odagawa, Mitsuhiro Tanaka
  • Patent number: 6194808
    Abstract: The surface acoustic wave functional element comprises a semiconductor layer provided on a piezoelectric substrate or a piezoelectric film substrate and makes use of interaction between a surface acoustic wave propagating on the substrate and electrons in the substrate layer, but has the semiconductor layer disposed outside above the propagation path for propagating a surface acoustic wave, comprises a plurality of grating electrodes perpendicularly above and to the propagation path and moreover the semiconductor layer comprises an active layer and a buffer layer lattice-matching thereto. By use of this surface acoustic wave functional element, a surface acoustic wave amplifier capable of providing a high amplification gain at a practical low voltage, a surface acoustic wave convolver having a higher efficiency than ever or the like are offered.
    Type: Grant
    Filed: January 12, 2000
    Date of Patent: February 27, 2001
    Assignees: Asahi Kasei Kogyo Kabushiki Kaisha
    Inventors: Kazuhiko Yamanouchi, Hiroyuki Odagawa, Wasuke Sato, Naohiro Kuze, Hiromasa Goto
  • Patent number: 5773911
    Abstract: A surface acoustic wave device including a piezoelectric substrate having NSPUDT behavior and a directionality reversed electrode structure including positive electrode, negative electrode and floating electrode. Positive and negative electrode fingers each having a width of .lambda./8 are arranged interdigitally at a pitch of .lambda. and floating electrode fingers having a width of 3 .lambda./8 are arranged between successive positive and negative fingers with an edge distance of .lambda./8. A directivity due to NSPUDT behavior of the substrate can be reversed. Positive and negative electrode fingers are arranged interdigitally at a pitch of .lambda. and between successive positive and negative electrode fingers are arranged floating electrode fingers having a reflecting coefficient different from that of the positive and negative electrodes.
    Type: Grant
    Filed: July 29, 1997
    Date of Patent: June 30, 1998
    Assignee: NGK Insulators, Ltd.
    Inventors: Mitsuhiro Tanaka, Masao Takeuchi, Kazuhiko Yamanouchi, Hiroyuki Odagawa
  • Patent number: 5698927
    Abstract: A surface acoustic wave device including a substrate made of a lithium tetraborate single crystal (Li.sub.2 B.sub.4 O.sub.7) whose cut and propagating direction are determined such that Euler cut angles (.psi., .theta., .phi.) are .psi.=+5.degree..about.-5.degree., .theta.=9.degree..about.29.degree. and 32.degree..about.86.degree. and .phi.=85.degree..about.95.degree., and an electrode structure formed on a surface of the substrate to realize a natural single-phase unidirectional transducer property together with an anisotropy of said substrate. A lithium tetraborate substrate having cut angles of (0.degree., 51.degree., 90.degree.) shows an ideal NSPUDT and a lithium tetraborate substrate having cut angles of (0.degree., 78.degree., 90.degree.) reveals a zero temperature coefficient of delay. A directionality reversed electrode structure or a directionality corrected electrode structure may be advantageously used.
    Type: Grant
    Filed: September 6, 1995
    Date of Patent: December 16, 1997
    Assignee: NGK Insulators, Ltd.
    Inventors: Mitsuhiro Tanaka, Masao Takeuchi, Kazuhiko Yamanouchi, Hiroyuki Odagawa