Patents by Inventor Hiroyuki Ohde
Hiroyuki Ohde has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9676944Abstract: Methods of increasing the solubility of a base in supercritical carbon dioxide include forming a complex of a Lewis acid and the base, and dissolving the complex in supercritical carbon dioxide. The Lewis acid is soluble in supercritical carbon dioxide, and the base is substantially insoluble in supercritical carbon dioxide. Methods for increasing the solubility of water in supercritical carbon dioxide include dissolving an acid or a base in supercritical carbon dioxide to form a solution and dissolving water in the solution. The acid or the base is formulated to interact with water to solubilize the water in the supercritical carbon dioxide. Some compositions include supercritical carbon dioxide, a hydrolysable metallic compound, and at least one of an acid and a base. Some compositions include an alkoxide and at least one of an acid and a base.Type: GrantFiled: December 16, 2014Date of Patent: June 13, 2017Assignees: Micron Technology, Inc., Idaho Research FoundationInventors: Chien M. Wai, Hiroyuki Ohde, Stephen J. Kramer
-
Publication number: 20150096468Abstract: Methods of increasing the solubility of a base in supercritical carbon dioxide include forming a complex of a Lewis acid and the base, and dissolving the complex in supercritical carbon dioxide. The Lewis acid is soluble in supercritical carbon dioxide, and the base is substantially insoluble in supercritical carbon dioxide. Methods for increasing the solubility of water in supercritical carbon dioxide include dissolving an acid or a base in supercritical carbon dioxide to form a solution and dissolving water in the solution. The acid or the base is formulated to interact with water to solubilize the water in the supercritical carbon dioxide. Some compositions include supercritical carbon dioxide, a hydrolysable metallic compound, and at least one of an acid and a base. Some compositions include an alkoxide and at least one of an acid and a base.Type: ApplicationFiled: December 16, 2014Publication date: April 9, 2015Inventors: Chien M. Wai, Hiroyuki Ohde, Stephen J. Kramer
-
Patent number: 8912238Abstract: Methods of increasing the solubility of a base in supercritical carbon dioxide include forming a complex of a Lewis acid and the base, and dissolving the complex in supercritical carbon dioxide. The Lewis acid is soluble in supercritical carbon dioxide, and the base is substantially insoluble in supercritical carbon dioxide. Methods for increasing the solubility of water in supercritical carbon dioxide include dissolving an acid or a base in supercritical carbon dioxide to form a solution and dissolving water in the solution. The acid or the base is formulated to interact with water to solubilize the water in the supercritical carbon dioxide. Some compositions include supercritical carbon dioxide, a hydrolysable metallic compound, and at least one of an acid and a base. Some compositions include an alkoxide and at least one of an acid and a base.Type: GrantFiled: July 9, 2012Date of Patent: December 16, 2014Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Stephen J. Kramer
-
Publication number: 20120291666Abstract: Methods of increasing the solubility of a base in supercritical carbon dioxide include forming a complex of a Lewis acid and the base, and dissolving the complex in supercritical carbon dioxide. The Lewis acid is soluble in supercritical carbon dioxide, and the base is substantially insoluble in supercritical carbon dioxide. Methods for increasing the solubility of water in supercritical carbon dioxide include dissolving an acid or a base in supercritical carbon dioxide to form a solution and dissolving water in the solution. The acid or the base is formulated to interact with water to solubilize the water in the supercritical carbon dioxide. Some compositions include supercritical carbon dioxide, a hydrolysable metallic compound, and at least one of an acid and a base. Some compositions include an alkoxide and at least one of an acid and a base.Type: ApplicationFiled: July 9, 2012Publication date: November 22, 2012Applicants: IDAHO RESEARCH FOUNDATION, MICRON TECHNOLOGY, INC.Inventors: Chien M. Wai, Hiroyuki Ohde, Stephen J. Kramer
-
Patent number: 8241708Abstract: Metal and/or silicon oxides are produced by hydrolysis of alkoxide precursors in the presence of either an acid catalyst or a base catalyst in a supercritical fluid solution. The solubility of the acid catalysts in the supercritical fluid can be increased by complexing the catalyst with a Lewis base that is soluble in the supercritical fluid. The solubility of the base catalysts in the supercritical fluid can be increased by complexing the catalyst with a Lewis acid that is soluble in the supercritical fluid. The solubility of water in the solution is increased by the interaction with the acid or base catalyst.Type: GrantFiled: March 9, 2005Date of Patent: August 14, 2012Assignees: Micron Technology, Inc., Idaho Research FoundationInventors: Chien M. Wai, Hiroyuki Ohde, Stephen J. Kramer
-
Patent number: 7897517Abstract: A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.Type: GrantFiled: July 31, 2009Date of Patent: March 1, 2011Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20090291556Abstract: A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.Type: ApplicationFiled: July 31, 2009Publication date: November 26, 2009Applicant: MICRON TECHNOLOGY, INC.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 7582561Abstract: A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.Type: GrantFiled: September 1, 2005Date of Patent: September 1, 2009Assignees: Micron Technology, Inc., Idaho Research Foundation, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 7423345Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: GrantFiled: October 25, 2002Date of Patent: September 9, 2008Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 7400043Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: GrantFiled: March 16, 2006Date of Patent: July 15, 2008Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20080136028Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: ApplicationFiled: October 25, 2002Publication date: June 12, 2008Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 7341947Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: GrantFiled: May 25, 2004Date of Patent: March 11, 2008Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20070190781Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: ApplicationFiled: May 25, 2004Publication date: August 16, 2007Inventors: Chien Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20070049019Abstract: A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.Type: ApplicationFiled: September 1, 2005Publication date: March 1, 2007Inventors: Chien Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20060204651Abstract: Metal and/or silicon oxides are produced by hydrolysis of alkoxide precursors in the presence of either an acid catalyst or a base catalyst in a supercritical fluid solution. The solubility of the acid catalysts in the supercritical fluid can be increased by complexing the catalyst with a Lewis base that is soluble in the supercritical fluid. The solubility of the base catalysts in the supercritical fluid can be increased by complexing the catalyst with a Lewis acid that is soluble in the supercritical fluid. The solubility of water in the solution is increased by the interaction with the acid or base catalyst.Type: ApplicationFiled: March 9, 2005Publication date: September 14, 2006Inventors: Chien Wai, Hiroyuki Ohde, Stephen Kramer
-
Publication number: 20060160367Abstract: The invention includes methods of treating semiconductor substrates with one or more reactants dispersed in supercritical fluid. A substrate can be provided within a reaction chamber having an interior periphery. The interior periphery can include a bottom region, a top region, and one or more sidewall regions between the bottom and top regions. The reaction chamber can be oriented in a gravitational field such that the field pulls from the top region toward the bottom region. The semiconductor substrate can be attached to one of the regions of the interior periphery other than the bottom region, and thereafter treated within the reaction chamber by exposing the semiconductor substrate to one or more reactants dispersed within a supercritical fluid.Type: ApplicationFiled: January 19, 2005Publication date: July 20, 2006Inventors: Chien Wai, Hiroyuki Ohde, Stephen Kramer
-
Publication number: 20060157860Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: ApplicationFiled: March 16, 2006Publication date: July 20, 2006Inventors: Chien Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 6653236Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: GrantFiled: March 29, 2002Date of Patent: November 25, 2003Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20030183938Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: ApplicationFiled: March 29, 2002Publication date: October 2, 2003Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 5629939Abstract: A time slot rearranging apparatus provided in a multiplexer in which a plurality of subscriber multiple signals transmitted through a subscriber line are converted into a primary rate multiple signal having a predetermined format. The time slot rearranging apparatus includes a format detecting circuit for detecting a type of format of the primary rate multiple signal, and an rearranging circuit for rearranging time slots of channels included in the plurality of subscriber multiple signals in accordance with the type of format detected by the format detecting circuit so that the primary rate multiple signal having the detected type of format is obtained.Type: GrantFiled: July 14, 1994Date of Patent: May 13, 1997Assignee: Fujitsu LimitedInventors: Hiroyuki Ohde, Noriyuki Kutsuwada