Abstract: To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group; wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.

Abstract: A titanium complex useful for producing a titanium-containing thin film under low temperature deposition conditions without using an oxidative gas is provided. A titanium complex represented by the general formula (1) (wherein each of R1 and R2 is independently a C1-6 alkyl group which may be bonded with each other to form a ring, X is CR3 or a N atom, Y is CR4 or a N atom, Z is CR5 or a N atom, each of R3, R4 and R5 is independently a hydrogen atom or a C1-6 alkyl group, and n is an integer of from 1 to 3).

Abstract: To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1): L1-Co-L2??(1) wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C): wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom; wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group; wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.

Abstract: Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R1 represents a silyloxy group represented by general formula (2) (wherein R6, R7 and R8 independently represent an alkyl group having 1 to 6 carbon atoms); R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R3, R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.

Abstract: Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R1 represents a silyloxy group represented by general formula (2) (wherein R6, R7 and R8 independently represent an alkyl group having 1 to 6 carbon atoms); R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R3, R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.

Abstract: The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein R1a to R7a, R8, R9 and R10 to R18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.

Abstract: The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein R1a to R7a, R8, R9 and R10 to R18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.