Abstract: A method for manufacturing a semiconductor device of the present disclosure includes: ion-implanting impurities into a source-drain electrodes forming region where a source electrode and a drain electrode are to be formed on a nitride semiconductor layer formed on a substrate; forming a silicon nitride film on the surface of the nitride semiconductor layer by a plasma-enhanced chemical vapor deposition method, the silicon nitride film constituting a surface protecting sacrifice film and having a refractive index of 1.80 or more and less than 1.88 and a thickness of 100 nm or more and 500 nm or less; and heat-treating the nitride semiconductor layer on which the surface protecting sacrifice film is formed.

Abstract: To provide a sliding member comprising a coating film exhibiting constant and stable chipping resistance and wear resistance and excellent in peeling resistance (adhesion), and the coating film thereof. The above-described problem is solved by a sliding member (10) comprising a coating film (1) on a sliding surface (16) on a base material (11). The coating film (1) has, when a cross section thereof is observed by a bright-field TEM image, a total thickness within a range of 1 ?m to 50 ?m, in repeating units including black hard carbon layers (B), relatively shown in black, and white hard carbon layers (W), relatively shown in white, and laminated in a thickness direction (Y). In the black hard carbon layer (B) and the white hard carbon layer (W) adjacent to each other, the white hard carbon layer (W) has higher hardness and a larger [sp2/(sp2+sp3)] ratio than the black hard carbon layer (B).

Abstract: A control device for a moving body is configured to execute following movement control under which a movement speed of a moving body is controlled to follow a preceding moving body moving ahead of the moving body, and constant speed movement control under which the movement speed of the moving body is controlled to be a predetermined target. The control device is configured to execute, when the preceding moving body is detected, the following movement control, and execute, when the preceding moving body is no longer detected during execution of the following movement control, the constant speed movement control under which the movement speed of the moving body is controlled such that the movement speed of the moving body becomes the target speed based on a movement speed of a surrounding moving body moving in a surrounding area of the moving body.

Abstract: A cryptographic communication system includes: a first cryptographic communication apparatus including a first tamper-resistant device configured to store a first key generation function and a first storage unit configured to store first individual information; and a second cryptographic communication apparatus including a second tamper-resistant device configured to store a second key generation function and a second storage unit configured to store second individual information. The first cryptographic communication apparatus generates a twelfth shared key using the first key generation function and the second individual information. The second cryptographic communication apparatus generates a twenty first shared key using the second key generation function and the first individual information.

Abstract: A semiconductor substrate (1) includes a front surface and a back surface opposite to each other, and a through-hole (9) penetrating from the back surface to the front surface. A metal film (10) surrounding the through-hole (9) is formed in a ring shape on the front surface. A front-surface electrode (6) includes a wiring electrode (11,12) covering the through-hole (9) and the metal film (10) and is joined to the front surface outside the metal film (10). A back-surface electrode (15) is formed on the back surface and inside the through-hole (9) and connected to the wiring electrode (11,12). The metal film (10) has a lower ionization tendency and a higher work function than the wiring electrode (11,12).

Abstract: An external circulation-type hollow fiber membrane module which has a high processing capacity and which is capable of inhibiting a to-be-treated liquid within a case from flowing through a short path and efficiently bringing the liquid into contact with a hollow fiber membrane in whichever direction of a vertical direction, a horizontal direction, etc., the liquid flows. An external circulation-type hollow fiber membrane module is provided with: a hollow fiber membrane bundle; a case; and a short-path prevention body that blocks flowing of a to-be-treated liquid in a gap between the hollow fiber membrane bundle and the case, wherein a first end of the hollow fiber membrane bundle is fixed in the case, and the short-path prevention body is provided to the downstream side of a first port which is a liquid flow-in port in the case so as to project from the inner surface of the case.

Abstract: A cryptographic communication system includes: a first cryptographic communication apparatus including a first tamper-resistant device configured to store a first key generation function and a first storage unit configured to store first individual information; and a second cryptographic communication apparatus including a second tamper-resistant device configured to store a second key generation function and a second storage unit configured to store second individual information. The first cryptographic communication apparatus generates a twelfth shared key using the first key generation function and the second individual information. The second cryptographic communication apparatus generates a twenty first shared key using the second key generation function and the first individual information.

Abstract: A transistor chip (2) has an active region (7). A first seal material (5) covers a central portion of the active region (7) and does not cover a peripheral portion of the active region (7). A second seal material (6) covers the peripheral portion of the active region (7). Thermal conductivity of the first seal material (5) is higher than thermal conductivity of the second seal material (6). Permittivity of the second seal material (6) is lower than permittivity of the first seal material (5).

Abstract: An object of the technique disclosed in the Description is to provide a semiconductor device that reduces a gate leakage current without degrading its high-frequency characteristic. A semiconductor device relating to the technique disclosed in the Description includes a nitride semiconductor layer, a first insulating film partly disposed on the upper surface of the nitride semiconductor layer, and a gate electrode provided to have a lower surface that is at least partly in contact with the upper surface of the nitride semiconductor layer that is exposed without being covered with the first insulating film. The first insulating film is provided to be in contact with a side surface of the gate electrode. The first insulating film contains a transition metal.

Abstract: The present invention pertains to a hollow fiber membrane module (5) for removing gas from an objective liquid or supplying gas to the objective liquid, comprising: a hollow fiber membrane bundle (20); and a collecting member (51) configured to collect first ends (20a) of the hollow fiber membrane bundle (20) while maintaining openings of opened end portions (22a) of hollow fiber membranes (22) of the hollow fiber membrane bundle (20), wherein the collecting member (51) has a coupling portion configured to couple the collecting member (51) to an installation object in a detachable and liquid-tight manner.

Abstract: A transistor chip (2) has an active region (7). A first seal material (5) covers a central portion of the active region (7) and does not cover a peripheral portion of the active region (7). A second seal material (6) covers the peripheral portion of the active region (7). Thermal conductivity of the first seal material (5) is higher than thermal conductivity of the second seal material (6). Permittivity of the second seal material (6) is lower than permittivity of the first seal material (5).

Abstract: An object of the technique disclosed in the Description is to provide a semiconductor device that reduces a gate leakage current without degrading its high-frequency characteristic. A semiconductor device relating to the technique disclosed in the Description includes a nitride semiconductor layer, a first insulating film partly disposed on the upper surface of the nitride semiconductor layer, and a gate electrode provided to have a lower surface that is at least partly in contact with the upper surface of the nitride semiconductor layer that is exposed without being covered with the first insulating film. The first insulating film is provided to be in contact with a side surface of the gate electrode. The first insulating film contains a transition metal.

Abstract: An external circulation-type hollow fiber membrane module which has a high processing capacity and which is capable of inhibiting a to-be-treated liquid within a case from flowing through a short path and efficiently bringing the liquid into contact with a hollow fiber membrane in whichever direction of a vertical direction, a horizontal direction, etc., the liquid flows. An external circulation-type hollow fiber membrane module is provided with: a hollow fiber membrane bundle; a case; and a short-path prevention body that blocks flowing of a to-be-treated liquid in a gap between the hollow fiber membrane bundle and the case, wherein a first end of the hollow fiber membrane bundle is fixed in the case, and the short-path prevention body is provided to the downstream side of a first port which is a liquid flow-in port in the case so as to project from the inner surface of the case.

Abstract: Disclosed herein is a hollow fiber membrane module provided with a hollow fiber membrane bundle, a case in which the hollow fiber membrane bundle is contained, a fixation part which affixes the hollow fiber membrane bundle within the case and divides the space inside the case into a first space that is outside the hollow fiber membranes and a second space that is in communication with the insides of the hollow fiber membranes, and a partition plate which divides the first space into a first region and a second region.

Abstract: Provided is a filtration device exhibiting a high water treatment capacity and capable of increasing the longevity of a hollow-fiber filter, in a water purification device not requiring a purification material and requiring a high water treatment capacity. The filtration device (3) has: a housing case (15) having a water inlet unit and a water outlet unit arranged on one end side thereof; and a membrane module (17) provided inside this housing case (15). A first flow path (31) for causing raw water that has flowed in from the water inlet unit (21) to flow further to the other end side of the housing case (15) than the membrane module (17), and a second flow path (33) for causing the raw water that has flowed further to the other end side of the housing case (15) along this first flow path (31) to pass through the membrane module (17) and flow to the water outlet unit (23) are provided inside the housing case (15).

Abstract: The present invention pertains to a hollow fiber membrane module (5) for removing gas from an objective liquid or supplying gas to the objective liquid, comprising: a hollow fiber membrane bundle (20); and a collecting member (51) configured to collect first ends (20a) of the hollow fiber membrane bundle (20) while maintaining openings of opened end portions (22a) of hollow fiber membranes (22) of the hollow fiber membrane bundle (20), wherein the collecting member (51) has a coupling portion configured to couple the collecting member (51) to an installation object in a detachable and liquid-tight manner.

Abstract: Disclosed herein is a hollow fiber membrane module provided with a hollow fiber membrane bundle, a case in which the hollow fiber membrane bundle is contained, a fixation part which affixes the hollow fiber membrane bundle within the case and divides the space inside the case into a first space that is outside the hollow fiber membranes and a second space that is in communication with the insides of the hollow fiber membranes, and a partition plate which divides the first space into a first region and a second region.

Abstract: A semiconductor device includes: a substrate; a nitride semiconductor layer on the substrate; a source electrode, a drain electrode and a gate electrode on the nitride semiconductor layer; and a SiN surface protective film covering the nitride semiconductor layer, wherein a composition ratio Si/N of Si and N that form a Si—N bond of the SiN surface protective film is 0.751 to 0.801.