Abstract: An aspect of the present invention allows a natural, humanlike conversation to be carried out between electronic apparatus. The audio adjustment device (1) includes: a sound analyzing section (21) for analyzing a second sound outputted from a second electronic apparatus; and an element adjusting section (24) for adjusting a first element characterizing the first sound, the first element being adjusted on a basis of either a content of a text in the second sound or a second element characterizing the second sound, the content of the text in the second sound and the second element being obtained by analysis by the sound analyzing section (21).

Abstract: A method for manufacturing a bonded SOI wafer, including depositing a polycrystalline silicon layer on a base wafer, forming an insulator film on a bond wafer, bonding the bond wafer and a polished surface of the silicon layer with the insulator film interposed, and thinning the bond wafer, wherein a silicon single crystal wafer having a resistivity of 100 ?·cm or more is the base wafer, the step of depositing the silicon layer includes a stage of forming an oxide film on the surface of the base wafer, and the silicon layer is deposited between 1050° C. and 1200° C. Accordingly, the method enables a polycrystalline silicon layer to be deposited while preventing the progress of single crystallization even through a heat treatment step in the SOI wafer manufacturing process or a heat treatment step in the device manufacturing process and can improve throughput in the polycrystalline silicon layer depositing step.

Abstract: The generating device (3, 3a, 3b) includes a control section (20, 20a, 20b) and a communication section (29). The control section obtains data via the communication section (29), which data indicates a content which has been caused to be displayed on a display screen of a terminal device (2, 2a) by an application, and the control section generates a shared page including the content.

Abstract: A method for manufacturing a bonded SOI wafer, including depositing a polycrystalline silicon layer on a base wafer, forming an insulator film on a bond wafer, bonding the bond wafer and a polished surface of the silicon layer with the insulator film interposed, and thinning the bond wafer, wherein a silicon single crystal wafer having a resistivity of 100 ?-cm or more is the base wafer, the step of depositing the silicon layer includes a stage of forming an oxide film on the surface of the base wafer, and the silicon layer is deposited between 1050° C. and 1200° C. Accordingly, the method enables a polycrystalline silicon layer to be deposited while preventing the progress of single crystallization even through a heat treatment step in the SOI wafer manufacturing process or a heat treatment step in the device manufacturing process and can improve throughput in the polycrystalline silicon layer depositing step.

Abstract: A conductive buffer material (11) is one surface of a display panel (29) sandwiched between a first member (BZ1) and a second member (CS), and is interposed between a first panel surface facing the metallic first member (BZ1) and the first member (BZ1). The conductive buffer material (11) includes an inclusion material (15) and a conductive envelope material (14) that wraps the inclusion material (15), and the conductive buffer material (11) includes a main portion in which part of the envelope material (14) is brought closer to the first panel surface and the first member (BZ1) by the inclusion material (15) having a given thickness or more.

Abstract: A conductive buffer material (11) is one surface of a display panel (29) sandwiched between a first member (BZ1) and a second member (CS), and is interposed between a first panel surface facing the metallic first member (BZ1) and the first member (BZ1). The conductive buffer material (11) includes an inclusion material (15) and a conductive envelope material (14) that wraps the inclusion material (15), and the conductive buffer material (11) includes a main portion in which part of the envelope material (14) is brought closer to the first panel surface and the first member (BZ1) by the inclusion material (15) having a given thickness or more.