Abstract: In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

Abstract: The present invention includes the steps of (A) forming a solution containing zinc into mist and spraying the solution formed into mist onto a substrate under no vacuum to form a metal oxide film on the substrate, and (B) irradiating the metal oxide film with ultraviolet rays to decrease a resistance of the metal oxide film. Further, the step (B) includes the steps of (B-1) determining, in accordance with a film thickness of the metal oxide film, wavelengths of the ultraviolet rays to be radiated, and (B-2) irradiating the metal oxide film with the ultraviolet rays having the wavelengths determined in said step (B-1).

Abstract: The present invention provides a method for forming an oxide film by which normal formation of an oxide film is always achieved without receiving an influence of a change in the atmosphere, a metal oxide film having a low resistance can be formed, and a high efficiency of film formation is obtained. In the present invention, a raw material solution containing an alkyl compound is formed into a mist and ejected to a substrate (100) in the atmosphere. Additionally, an oxidizing agent that exerts an oxidizing effect on the alkyl compound is supplied to the mist of the raw material solution. Through the above-described processes, an oxide film is formed on the substrate in the present invention.

Abstract: An object of the present invention is to provide a film formation device that is able to prevent a size increase in a configuration around a mist jet nozzle while maintaining uniform spouting of a mist to a substrate on which a film is to be formed. The present invention includes a mist generator (2) that generates a mist of a raw material of a film to be formed, and a mist jet nozzle (1) that jets the mist generated by the mist generator to a substrate on which a film is to be formed. The mist jet nozzle includes: a main body (1A) having a hollow portion (1H); a mist supply port (5a) that supplies the mist; a spout (8) that jets the mist to the outside; a carrier gas supply port (6a) that supplies a carrier gas; and a shower plate (7) having a plurality of holes (7a) formed therein. By the arrangement of the shower plate, the hollow portion is divided into a first space (1S) connected to the carrier gas supply port and a second space (1T) connected to the spout.

Abstract: A film forming apparatus (100) according to one embodiment of the present invention includes a first solution container (5A), a second solution container (5B), a reaction chamber (1), a first path (L1), and a second path (L2). The first solution container (5A) stores a source solution (10) containing metal. The second solution container (5B) stores hydrogen peroxide. A substrate (2) is disposed in the reaction chamber (1), and the reaction chamber (1) includes a heating unit (3) that heats the substrate. The first path (L1) supplies a source solution (11) from the first solution container (5A) to the reaction chamber (1). The second path (L2) supplies hydrogen peroxide from the second solution container (5B) to the reaction chamber (1).

Abstract: The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.

Abstract: The present invention aims at providing a method for forming a metal oxide film which can further improve the production efficiency while maintaining low resistance of a metal oxide film formed thereby. In the method for forming a metal oxide film of the present invention, a solution (4) containing a metallic element and ammonia (4a) is formed into a mist. Meanwhile, a substrate (2) is heated. Then, the solution (4) formed into a mist is supplied onto a first main surface of the substrate (2) being heated.

Abstract: A method of forming a metal oxide film, which can lower a temperature of a heat treatment of a substrate and also can form a metal oxide film having a low resistance value without limiting the kind of the metal oxide film to be formed. The method of forming a metal oxide film includes (A) converting a solution containing a metal into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.

Abstract: A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.