Patents by Inventor Hiroyuki SAKAIRI
Hiroyuki SAKAIRI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240055328Abstract: Semiconductor device A1 includes: first terminal 201A and second terminal 201B; first switching element 1A including first gate electrode 12A, first source electrode 13A and first drain electrode 14A; and second switching element 1B including second gate electrode 12B, second source electrode 13B and second drain electrode 14B. First switching element 1A and second switching element 1B are connected in series to each other between first terminal 201A and second terminal 201B. Semiconductor device A1 includes first capacitor 3A connected in parallel to first switching element 1A and second switching element 1B between first terminal 201A and second terminal 201B. First switching element 1A and second switching element 1B are aligned in y direction. First capacitor 3A overlaps with at least one of first switching element 1A and second switching element 1B as viewed in z direction. These arrangements serve to suppress surge voltage.Type: ApplicationFiled: October 27, 2023Publication date: February 15, 2024Inventors: Atsushi YAMAGUCHI, Hiroyuki SAKAIRI, Takukazu OTSUKA
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Publication number: 20230421073Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.Type: ApplicationFiled: September 8, 2023Publication date: December 28, 2023Applicant: ROHM CO., LTD.Inventors: Yuki NAKANO, Hiroyuki SAKAIRI
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Patent number: 11842949Abstract: Semiconductor device A1 includes: first terminal 201A and second terminal 201B; first switching element 1A including first gate electrode 12A, first source electrode 13A and first drain electrode 14A; and second switching element 1B including second gate electrode 12B, second source electrode 13B and second drain electrode 14B. First switching element 1A and second switching element 1B are connected in series to each other between first terminal 201A and second terminal 201B. Semiconductor device A1 includes first capacitor 3A connected in parallel to first switching element 1A and second switching element 1B between first terminal 201A and second terminal 201B. First switching element 1A and second switching element 1B are aligned in y direction. First capacitor 3A overlaps with at least one of first switching element 1A and second switching element 1B as viewed in z direction. These arrangements serve to suppress surge voltage.Type: GrantFiled: October 9, 2019Date of Patent: December 12, 2023Assignee: ROHM CO., LTD.Inventors: Atsushi Yamaguchi, Hiroyuki Sakairi, Takukazu Otsuka
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Patent number: 11784580Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.Type: GrantFiled: October 4, 2022Date of Patent: October 10, 2023Assignee: ROHM CO., LTD.Inventors: Yuki Nakano, Hiroyuki Sakairi
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Publication number: 20230245962Abstract: A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Koshun SAITO, Hiroyuki SAKAIRI, Yasufumi MATSUOKA, Kenichi YOSHIMOCHI
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Patent number: 11652033Abstract: A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.Type: GrantFiled: July 12, 2021Date of Patent: May 16, 2023Assignee: Rohm Co., Ltd.Inventors: Koshun Saito, Hiroyuki Sakairi, Yasufumi Matsuoka, Kenichi Yoshimochi
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Publication number: 20230027268Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.Type: ApplicationFiled: October 4, 2022Publication date: January 26, 2023Inventors: Yuki NAKANO, Hiroyuki SAKAIRI
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Patent number: 11509240Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.Type: GrantFiled: April 12, 2021Date of Patent: November 22, 2022Assignee: ROHM CO., LTD.Inventors: Yuki Nakano, Hiroyuki Sakairi
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Publication number: 20220320054Abstract: A semiconductor device includes a conductive member including first, second and third conductors mutually spaced, a first semiconductor element having a first obverse surface provided with a first drain electrode, a first source electrode and a first gate electrode, and a second semiconductor element having a second obverse surface provided with a second drain electrode, a second source electrode and a second gate electrode. The first conductor is electrically connected to the first source electrode and the second drain electrode. The second conductor is electrically connected to the second source electrode. As viewed in a first direction crossing the first obverse surface, the second conductor is adjacent to the first conductor in a second direction crossing the first direction. The third conductor is electrically connected to the first drain electrode and is adjacent to the first conductor and the second conductor as viewed in the first direction.Type: ApplicationFiled: June 19, 2020Publication date: October 6, 2022Inventors: Hiroyuki SAKAIRI, Yusuke NAKAKOHARA, Ken NAKAHARA
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Publication number: 20220005753Abstract: Semiconductor device A1 includes: first terminal 201A and second terminal 201B; first switching element 1A including first gate electrode 12A, first source electrode 13A and first drain electrode 14A; and second switching element 1B including second gate electrode 12B, second source electrode 13B and second drain electrode 14B. First switching element 1A and second switching element 1B are connected in series to each other between first terminal 201A and second terminal 201B. Semiconductor device A1 includes first capacitor 3A connected in parallel to first switching element 1A and second switching element 1B between first terminal 201A and second terminal 201B. First switching element 1A and second switching element 1B are aligned in y direction. First capacitor 3A overlaps with at least one of first switching element 1A and second switching element 1B as viewed in z direction. These arrangements serve to suppress surge voltage.Type: ApplicationFiled: October 9, 2019Publication date: January 6, 2022Inventors: Atsushi YAMAGUCHI, Hiroyuki SAKAIRI, Takukazu OTSUKA
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Publication number: 20210343629Abstract: A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.Type: ApplicationFiled: July 12, 2021Publication date: November 4, 2021Inventors: Koshun SAITO, Hiroyuki SAKAIRI, Yasufumi MATSUOKA, Kenichi YOSHIMOCHI
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Patent number: 11081433Abstract: A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.Type: GrantFiled: April 30, 2020Date of Patent: August 3, 2021Assignee: ROHM CO., LTD.Inventors: Koshun Saito, Hiroyuki Sakairi, Yasufumi Matsuoka, Kenichi Yoshimochi
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Publication number: 20210234472Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.Type: ApplicationFiled: April 12, 2021Publication date: July 29, 2021Inventors: Yuki NAKANO, Hiroyuki SAKAIRI
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Patent number: 11005387Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.Type: GrantFiled: March 6, 2020Date of Patent: May 11, 2021Assignee: ROHM CO., LTD.Inventors: Yuki Nakano, Hiroyuki Sakairi
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Publication number: 20210132136Abstract: A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.Type: ApplicationFiled: December 31, 2020Publication date: May 6, 2021Inventors: Tatsuya YANAGI, Hirotaka OTAKE, Hiroyuki SAKAIRI, Naotaka KURODA
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Patent number: 10908204Abstract: A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.Type: GrantFiled: March 29, 2017Date of Patent: February 2, 2021Assignee: Rohm Co., Ltd.Inventors: Tatsuya Yanagi, Hirotaka Otake, Hiroyuki Sakairi, Naotaka Kuroda
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Patent number: 10901024Abstract: A method for measuring a current-voltage characteristic (Id?Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id?Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.Type: GrantFiled: February 27, 2018Date of Patent: January 26, 2021Assignee: Rohm Co., Ltd.Inventors: Tatsuya Yanagi, Hirotaka Otake, Hiroyuki Sakairi, Naotaka Kuroda
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Publication number: 20200365497Abstract: A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.Type: ApplicationFiled: April 30, 2020Publication date: November 19, 2020Inventors: Koshun SAITO, Hiroyuki SAKAIRI, Yasufumi MATSUOKA, Kenichi YOSHIMOCHI
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Publication number: 20200212820Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.Type: ApplicationFiled: March 6, 2020Publication date: July 2, 2020Inventors: Yuki NAKANO, Hiroyuki SAKAIRI
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Patent number: 10630199Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.Type: GrantFiled: April 29, 2019Date of Patent: April 21, 2020Assignee: ROHM CO., LTD.Inventors: Yuki Nakano, Hiroyuki Sakairi