Abstract: A sealing member that forms a combustion gas flow path of a gas turbine includes a first body portion having a cooling passage. The first body portion includes a first end portion forming one end portion in a circumferential direction, a second end portion forming the other end portion on an opposite side in the circumferential direction, and an intermediate portion formed between the first and second end portions. The cooling passage includes an intermediate portion cooling passage inclined at a first angle with respect to an axial direction, a first end portion cooling passage provided in the first end portion and inclined at a second angle with respect to the axial direction, and a second end portion cooling passage provided in the second end portion and inclined at a third angle with respect to the axial direction, and the second and third angles are smaller than the first angle.

Abstract: This exit seal is for connecting an exit flange of a combustor and a shroud in a stator blade of a turbine. The exit seal is equipped with: a seal body that extends in a circumferential direction; and a lid member disposed at a circumferential end of the seal body. The seal body comprises one or more recessed sections that are recessed in a radial direction or in an axial direction and extend in the circumferential direction. At a position of the circumferential end of at least one recessed section among the one or more recessed sections, the lid member is disposed so as to overlap, in the axial direction and the radial direction, with a recessed space formed by the one recessed section.

Abstract: A combustion tube for a gas turbine including an outlet section having a cross-section of an annular sector-shape. The outlet section includes an outer wall forming an outer peripheral boundary of the annular sector-shape, an inner wall forming an inner peripheral boundary of the annular sector-shape, and a pair of side walls forming boundaries on both sides of the annular sector-shape in a circumferential direction, respectively. The outer wall extends obliquely with respect to the inner wall such that a height of the annular sector-shape decreases toward an outlet opening of the combustion tube. A first side wall extends obliquely with respect to a second side such that a perimeter of the annular sector-shape increases toward the outlet opening of the combustion tube. An inclination angle ?1 of the first side wall with respect to the second side wall satisfies 0<?1?56.

Abstract: This transition piece comprises a pair of side plates which face each other across an axis, a plate inside the curve which, with reference to the axis, is arranged inside the curve where the downstream portion curves relative to the upstream portion on the axis, and a plate outside the curve which, with reference to the axis, is arranged outside the curve on the side opposite of the aforementioned inside the curve. The plate inside the curve, the plate outside the curve and the pair of side plates each has multiple passage groups which are configured from multiple cooling passages that allow flow of a cooling medium and that extend in the axis direction and are arranged side-by-side in the circumferential direction, and one or more headers which allow flow of the cooling medium and which extend in the circumferential direction. The number of the one or more headers of the plate inside the curve is less than the number of the one or more headers in the plate outside the curve and the pair of side plats.

Abstract: A combustion tube for a gas turbine including an outlet section having a cross-section of an annular sector-shape. The outlet section includes an outer wall forming an outer peripheral boundary of the annular sector-shape, an inner wall forming an inner peripheral boundary of the annular sector-shape, and a pair of side walls forming boundaries on both sides of the annular sector-shape in a circumferential direction, respectively. The outer wall extends obliquely with respect to the inner wall such that a height of the annular sector-shape decreases toward an outlet opening of the combustion tube. A first side wall extends obliquely with respect to a second side such that a perimeter of the annular sector-shape increases toward the outlet opening of the combustion tube. An inclination angle ?1 of the first side wall with respect to the second side wall satisfies 0<?1?56.

Abstract: This exit seal is for connecting an exit flange of a combustor and a shroud in a stator blade of a turbine. The exit seal is equipped with: a seal body that extends in a circumferential direction; and a lid member disposed at a circumferential end of the seal body. The seal body comprises one or more recessed sections that are recessed in a radial direction or in an axial direction and extend in the circumferential direction. At a position of the circumferential end of at least one recessed section among the one or more recessed sections, the lid member is disposed so as to overlap, in the axial direction and the radial direction, with a recessed space formed by the one recessed section.

Abstract: A combustion tube for a gas turbine including an outlet section having a cross-section of an annular sector-shape. The outlet section includes an outer wall forming an outer peripheral boundary of the annular sector-shape, an inner wall forming an inner peripheral boundary of the annular sector-shape, and a pair of side walls forming boundaries on both sides of the annular sector-shape in a circumferential direction, respectively. The outer wall extends obliquely with respect to the inner wall such that a height of the annular sector-shape decreases toward an outlet opening of the combustion tube. A first side wall extends obliquely with respect to a second side such that a perimeter of the annular sector-shape increases toward the outlet opening of the combustion tube. An inclination angle ?1 of the first side wall with respect to the second side wall satisfies 0<?1?56.

Abstract: In a semiconductor device having a heterojunction type superjunction structure, a drain portion and a source portion are electrically connected to one of a two-dimensional electron gas layer and a two-dimensional hole gas layer, and a gate portion is prevented by an insulating region from directly contacting the one of the two-dimensional election gas layer and the two-dimensional hole gas layer.

Abstract: In a semiconductor device having a heterojunction type superjunction structure, a drain portion and a source portion are electrically connected to one of a two-dimensional electron gas layer and a two-dimensional hole gas layer, and a gate portion is prevented by an insulating region from directly contacting the one of the two-dimensional election gas layer and the two-dimensional hole gas layer.

Abstract: A cylinder of a combustor includes a cylinder body inside of which combustion gas flows, a jacket plate that covers the cylinder body from the outside and forms a fluid space into which high-pressure fluid flows between an inner peripheral surface of the jacket plate and an outer peripheral surface of the cylinder body, and a rib that connects the cylinder body and the jacket plate. The rib is connected to the cylinder body by a cylinder side end portion on the cylinder body side in a radial direction with respect to an axis of the cylinder body being welded from both sides in an axial direction of the axis. The rib is connected to the jacket plate by a jacket side end portion on the jacket plate side in the radial direction being welded from both sides in the axial direction.

Abstract: A semiconductor apparatus (10) includes: a layered structure (100) that includes double junction structures that have a first junction (151, 153) where a wide-bandgap layer (102, 104) and a narrow-bandgap layer (101, 103, 105) are layered on each other and a second junction (152, 154) where a narrow-bandgap layer (101, 103, 105) and a wide-bandgap layer (102, 104) are layered on each other, and electrode semiconductor layers (110, 120) are joined to each layer of the layered structure. Each double junction structure includes a pair of a first region (131, 133) that has negative fixed charge and a second region (132, 134) that has positive fixed charge. The first region is closer to the first junction than to a center of the wide-bandgap layer. The second region is closer to the second junction than to the center of the wide-bandgap layer. A 2DEG or a 2DHG is formed at each junction. The semiconductor apparatus functions as an electric energy storage device such as a capacitor.

Abstract: A cylinder of a combustor includes a cylinder body inside of which combustion gas flows, a jacket plate that covers the cylinder body from the outside and forms a fluid space into which high-pressure fluid flows between an inner peripheral surface of the jacket plate and an outer peripheral surface of the cylinder body, and a rib that connects the cylinder body and the jacket plate. The rib is connected to the cylinder body by a cylinder side end portion on the cylinder body side in a radial direction with respect to an axis of the cylinder body being welded from both sides in an axial direction of the axis. The rib is connected to the jacket plate by a jacket side end portion on the jacket plate side in the radial direction being welded from both sides in the axial direction.

Abstract: A semiconductor apparatus (10) includes: a layered structure (100) that includes double junction structures that have a first junction (151, 153) where a wide-bandgap layer (102, 104) and a narrow-bandgap layer (101, 103, 105) are layered on each other and a second junction (152, 154) where a narrow-bandgap layer (101, 103, 105) and a wide-bandgap layer (102, 104) are layered on each other, and electrode semiconductor layers (110, 120) are joined to each layer of the layered structure. Each double junction structure includes a pair of a first region (131, 133) that has negative fixed charge and a second region (132, 134) that has positive fixed charge. The first region is closer to the first junction than to a center of the wide-bandgap layer. The second region is closer to the second junction than to the center of the wide-bandgap layer. A 2DEG or a 2DHG is formed at each junction. The semiconductor apparatus functions as an electric energy storage device such as a capacitor.

Abstract: A three-dimensional periodical structure whose period is about 1 ?m or smaller is provided. At least two kinds of films which have two-dimensionally substantially periodical projections are successively formed in layers substantially periodical to construct structure which is substantially three-dimensionally periodical. For instance, the films are made of materials different in refractive index. The three-dimensional periodical structure whose period is about 1 ?m or smaller can be obtained by a simple fabricating method. By this structure, the propagation of a wave with a specific wavelength in many solid angular directions including several axial directions parallel to the plane and the thickness direction of the layers can be cut off.

Abstract: A grid-inserted quantum structure which exhibits a quantum size effect and in which a material (3), (4) dissimilar to that of a confining layer (1) having a high level of electron affinity is disposed on both sides or one side of the confining layer (1), comprises grids (2) which are composed of a dissimilar material having an attraction potential or a repulsion potential and which are disposed at equal intervals. This structure enables electrons to be captured in regions without the grids (2) or around the grids (2) owing to the interaction between the electrons and the grids (2) in the confining layer (1). Further, the effective function of the potential of the grids (2) enables the same effect as that obtained by several tens atomic layers of a dissimilar material to be obtained by one or several atomic layers.

Abstract: There is disclosed an electromechanical semiconductor transducer which is composed of a substrate of a first compound semiconductor and layers of second to fifth compound semiconductors grown on the substrate. The compound semiconductor contains at least one element such as aluminum, gallium, and arsenic selected from Groups III and V of the periodic table. The transducer converts mechanical strain into electrical signals.

Abstract: A mobility-modulation FET utilizes a mobility-modulation system in which the mobility .mu. of the carriers within the channel is modulated by a signal voltage applied to gate electrodes. More particularly, in order to eliminate the limit in the response speed dependent upon the channel transit time of the carriers, a mobility-modulation system in which the channels are so formed as to vary the carrier mobility in response to the applied gate voltage is utilized, which is different from the carrier density modulation system, to thereby increase the response speed considerably.

Abstract: In a semiconductor element using avalanche multiplication such as a light-receiving element or a microwave oscillating element, a semiconductor A and a semiconductor B which satisfy the following condition:X.sub.A <X.sub.B, X.sub.A +E.sub.gA <X.sub.B +E.sub.gBwhere X.sub.A is the electron affinity of the semiconductor A, E.sub.gA is the forbidden band width of the semiconductor A, X.sub.B is the electron affinity of the semiconductor B and E.sub.gB is the forbidden band width of the semiconductor B, are layered and an electric field is applied in parallelism to the layer, whereby an impact ionization coefficient rate is obtained by junction of the different kinds of semiconductors. At least one of the semiconductors A and B is composed of a mixed crystal comprising three or more elements, and the mole fraction of said one semiconductor is varied to thereby control the value of the impact ionization coefficient rate.