Abstract: Ion sensing device includes a field-effect transistor including a bottom gate and a top gate, a reference electrode, and a driver circuit configured to measure concentration of ions in a sample solution into which the reference electrode and the top gate are immersed. The driver circuit includes a constant current source configured to supply a drain of the field-effect transistor with a constant current, and a voltage follower configured to receive a potential of the drain. The driver circuit is configured to supply the reference electrode with a constant reference potential, apply a constant voltage across an output of the voltage follower and the bottom gate, and output an output potential of the voltage follower.

Abstract: Ion sensing device includes a field-effect transistor including a bottom gate and a top gate, a reference electrode, and a driver circuit configured to measure concentration of ions in a sample solution into which the reference electrode and the top gate are immersed. The driver circuit includes a constant current source configured to supply a drain of the field-effect transistor with a constant current, and a voltage follower configured to receive a potential of the drain. The driver circuit is configured to supply the reference electrode with a constant reference potential, apply a constant voltage across an output of the voltage follower and the bottom gate, and output an output potential of the voltage follower.

Abstract: An image sensor is disclosed. A first thin-film transistor includes a first gate and a second gate. The first gate is supplied with a signal generated by a photoelectric conversion element. The second gate is supplied with a potential different from a potential of a first signal line by a predetermined voltage through a second signal line. The second gate has a smaller capacitance than the first gate. A second thin-film transistor supplies a reset potential received from a reset power line to the photoelectric conversion element. Whether a third thin-film transistor is in a conductive state is controlled by a selection signal. The third thin-film transistor is disposed between the first signal line and the first thin-film transistor and the current from a constant current source flows into the first thin-film transistor via the third thin-film transistor in a conductive state.

Abstract: A fuel cell unit includes a fuel cell stack, an electrical device, a harness connected to the electrical device, and a casing incorporating the fuel cell stack, the electrical device, and the harness. The casing includes a first accommodation portion, a second accommodation portion, and a partition wall provided with a first communication hole through which the harness passes, the first accommodation portion accommodating the fuel cell stack, the second accommodation portion accommodating the electrical device, the partition wall partitioning the first accommodation portion and the second accommodation portion, and the partition wall is provided with at least one second communication hole through which the first accommodation portion and the second accommodation portion communicate with each other, in addition to the first communication hole.

Abstract: An image sensor includes a pixel and a control circuit to detect the optical signal transmitted by a signal line. The pixel includes a photodetector, an amplifier circuit configured to amplify an optical signal from the photodetector, and a first switch configured to control whether to output the optical signal from the pixel to the signal line. The control circuit includes a first capacitor connected with the signal line and an integrator connected with the signal line via the first capacitor. The control circuit is configured to successively supply a first potential and a second potential different from each other to the signal line in a state where the first switch is non-conductive, and measure an amplification rate determined by the first capacitor and the integrator based on outputs of the integrator when the first potential is supplied and the second potential is supplied.

Abstract: An image sensor is disclosed. A first thin-film transistor includes a first gate and a second gate. The first gate is supplied with a signal generated by a photoelectric conversion element. The second gate is supplied with a potential different from a potential of a first signal line by a predetermined voltage through a second signal line. The second gate has a smaller capacitance than the first gate. A second thin-film transistor supplies a reset potential received from a reset power line to the photoelectric conversion element. Whether a third thin-film transistor is in a conductive state is controlled by a selection signal. The third thin-film transistor is disposed between the first signal line and the first thin-film transistor and the current from a constant current source flows into the first thin-film transistor via the third thin-film transistor in a conductive state.

Abstract: An image sensor includes a pixel and a control circuit to detect the optical signal transmitted by a signal line. The pixel includes a photodetector, an amplifier circuit configured to amplify an optical signal from the photodetector, and a first switch configured to control whether to output the optical signal from the pixel to the signal line. The control circuit includes a first capacitor connected with the signal line and an integrator connected with the signal line via the first capacitor. The control circuit is configured to successively supply a first potential and a second potential different from each other to the signal line in a state where the first switch is non-conductive, and measure an amplification rate determined by the first capacitor and the integrator based on outputs of the integrator when the first potential is supplied and the second potential is supplied.

Abstract: An imaging device supplies a first constant potential and a second constant potential to a photodiode through a first line and a second line to put the photodiode in a reverse-bias state. The imaging device reads a signal corresponding to the potential at the other end of the photodiode changed by light incident on the photodiode in the reverse-bias state. The imaging device supplies a potential that changes with time to a capacitive element through a control line so that a forward current flows through the photodiode disposed between the capacitive element and the first line after reading the signal.

Abstract: Ion sensing device includes a field-effect transistor including a bottom gate and a top gate, a reference electrode, and a driver circuit configured to measure concentration of ions in a sample solution into which the reference electrode and the top gate are immersed. The driver circuit includes a constant current source configured to supply a drain of the field-effect transistor with a constant current, and a voltage follower configured to receive a potential of the drain. The driver circuit is configured to supply the reference electrode with a constant reference potential, apply a constant voltage across an output of the voltage follower and the bottom gate, and output an output potential of the voltage follower.

Abstract: A device includes a first element having rectification characteristics that allow electric current to flow from an upper electrode to a lower electrode, an n-channel thin film transistor, and a control electrode. The n-channel thin film transistor includes a semiconductor film, a gate electrode, a first signal electrode, and a second signal electrode. The control electrode faces the gate electrode with the semiconductor film interposed therebetween. The second signal electrode is connected with the lower electrode. The control electrode is connected with the lower electrode. At least a part of a first channel end on the first signal electrode side of the semiconductor film is located within a region of the control electrode, when viewed planarly. A second channel end on the second signal electrode side of the semiconductor film is distant from the control electrode, when viewed planarly.

Abstract: An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

Abstract: A fuel cell unit includes a fuel cell stack having a stacked plurality of single cells; a stack case housing the fuel cell stack; a component case having an opening dosed by a wall of the stack case that is parallel to a stacking direction of the single cells; and a high-voltage component which is housed inside the component case and fixed to at least one of an opposite wall and an extending wall of the component case, on a surface of that wall facing the inside of the component case, and to which electricity generated in the fuel cell stack is supplied. The opposite wall faces the opening. The extending wall extends from the opposite wall toward the stack case.

Abstract: An imaging device supplies a first constant potential and a second constant potential to a photodiode through a first line and a second line to put the photodiode in a reverse-bias state. The imaging device reads a signal corresponding to the potential at the other end of the photodiode changed by light incident on the photodiode in the reverse-bias state. The imaging device supplies a potential that changes with time to a capacitive element through a control line so that a forward current flows through the photodiode disposed between the capacitive element and the first line after reading the signal.

Abstract: An image sensor: includes a pixel matrix in which pixels are disposed in a matrix, each pixel including a photoelectric conversion element and a switching element connected to the photoelectric conversion element; performs selection processing, on each pixel row of the pixel matrix, including selecting a pixel row and outputting a signal to the selected pixel row to make switching elements conductive; performs detection processing of detecting signals from the photoelectric conversion elements in the selected pixel row; and performs the selection processing based on received control signals, wherein the control signals include first control signals having a cycle shorter than a first period in which the selection processing and the detection processing are performed on all pixel rows, and wherein the cycle is equal to or shorter than a second period in which the selection processing and the detection processing are performed on one pixel row.

Abstract: An image sensor includes a plurality of pixels arranged in matrix, and each pixel includes a first TFT having a first gate electrode and a second gate electrode that are arranged on a substrate, a second TFT, and a photoelectric conversion element that has a first electrode electrically connected to a first surface of an a-Si thin film and the second gate electrode of the first TFT and a second electrode connected to a second control line, and that is arranged above the first TFT so as to be superposed on the first TFT in an laminated direction. Provided is a gas barrier film that is positioned between the first and the second TFTs and the photoelectric conversion element and that prevents hydrogen from permeating into the first and the second TFTs, the first electrode and the second gate electrode are constructed by the same layer, and the gas barrier film is not provided with an aperture in each of the pixels.

Abstract: A fuel cell vehicle includes a first high-voltage unit and a second high-voltage unit in a front compartment. The first high-voltage unit includes a first case including a body portion, and a projecting portion that projects from an outer surface of the body portion, and is located between a pair of suspension towers, and between a dashboard panel and a front bumper. The second high-voltage unit is placed in space between one of the suspension towers and the dashboard panel. The projecting portion projects toward the one suspension tower, and at least a part of the projecting portion is located on the front side in the traveling direction, relative to a straight line connecting center axes of the suspension towers, as viewed from the top of the vehicle.

Abstract: A device includes a first element having rectification characteristics that allow electric current to flow from an upper electrode to a lower electrode, an n-channel thin film transistor, and a control electrode. The n-channel thin film transistor includes a semiconductor film, a gate electrode, a first signal electrode, and a second signal electrode. The control electrode faces the gate electrode with the semiconductor film interposed therebetween. The second signal electrode is connected with the lower electrode. The control electrode is connected with the lower electrode. At least a part of a first channel end on the first signal electrode side of the semiconductor film is located within a region of the control electrode, when viewed planarly. A second channel end on the second signal electrode side of the semiconductor film is distant from the control electrode, when viewed planarly.

Abstract: In manufacturing an image sensor for FPD having an oxide semiconductor TFT as a switching element, a large amount of hydrogen contained in raw gas is diffused in the oxide semiconductor at the time of forming a-Si photo diode (PD) which is a photoelectric conversion element, causing significant variation in the characteristic of TFT which may thereby not operate. In an image sensor in which an oxide semiconductor TFT and a-Si PD are formed on a substrate in this order, a gas barrier film is disposed between the oxide semiconductor TFT and the PD, and the drain terminal (drain metal) of the oxide semiconductor TFT is connected to one terminal (lower electrode) of the PD via connection wiring (bridge wiring) formed on a protective film arranged over the PD.

Abstract: An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

Abstract: A fuel cell unit includes a fuel cell and a converter. A fuel cell has single cells laminated in a given direction. A converter has a plurality of combinations of a reactor electrically connected with the fuel cell and a power module electrically connected with the reactor. At least either a direction in which first reactors among the reactors are arrayed or a direction in which first power modules among the power modules are arrayed is parallel with a laminating direction of the single cells.