Abstract: A plasma etching method includes accommodating a target substrate in a processing chamber; supplying a processing gas from a processing gas supplying mechanism disposed to face the target substrate and configured to be able to supply different processing gases to a central portion and a peripheral portion of the target substrate; and generating a plasma of the processing gas to perform a plasma etching on a lower organic resist film formed on the target substrate by using, as a mask, an intermediate layer made of an inorganic material and an upper photosensitive resist film that are formed on the lower organic resist film. As the processing gas, a gas containing CH4 gas is supplied, and a flow rate of the CH4 gas supplied to the peripheral portion is set to be higher than a flow rate of the CH4 gas supplied to the central portion.