Abstract: To provide a thermoelectric conversion material having an enhanced thermoelectromotive force and a production method thereof. A thermoelectric conversion material including a matrix and a barrier material, wherein the matrix contains Mg2Si1-xSnx (x is from 0.50 to 0.80) and an n-type dopant and the barrier material contains Mg2Si1-ySny (y is from 0 to 0.30), and a production method thereof. A thermoelectric conversion material and a production method thereof, in which the movement of minority carrier is blocked by a barrier material and the thermoelectromotive force is thereby enhanced, can be provided.

Abstract: According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a first terminal, a second terminal, and a third terminal. The first terminal has an electrical status different between a case where the storage device and a first device are connected, and a case where the storage device and a second device are connected. Through the second terminal, voltage is applied by the first device to the storage device in the case where the storage device and the first device are connected, and a control signal is input from the second device to the storage device in the case where the storage device and the second device are connected. Through the third terminal, power is supplied to the storage device. The switch switches a connection status and a disconnection status.

Abstract: A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.

Abstract: According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a first terminal, a second terminal, and a third terminal. The first terminal has an electrical status different between a case where the storage device and a first device are connected, and a case where the storage device and a second device are connected. Through the second terminal, voltage is applied by the first device to the storage device in the case where the storage device and the first device are connected, and a control signal is input from the second device to the storage device in the case where the storage device and the second device are connected. Through the third terminal, power is supplied to the storage device. The switch switches a connection status and a disconnection status.

Abstract: According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a first terminal, a second terminal, and a third terminal. The first terminal has an electrical status different between a case where the storage device and a first device are connected, and a case where the storage device and a second device are connected. Through the second terminal, voltage is applied by the first device to the storage device in the case where the storage device and the first device are connected, and a control signal is input from the second device to the storage device in the case where the storage device and the second device are connected. Through the third terminal, power is supplied to the storage device. The switch switches a connection status and a disconnection status.

Abstract: According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a first terminal, a second terminal, and a third terminal. The first terminal has an electrical status different between a case where the storage device and a first device are connected, and a case where the storage device and a second device are connected. Through the second terminal, voltage is applied by the first device to the storage device in the case where the storage device and the first device are connected, and a control signal is input from the second device to the storage device in the case where the storage device and the second device are connected. Through the third terminal, power is supplied to the storage device. The switch switches a connection status and a disconnection status.

Abstract: According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a first terminal, a second terminal, and a third terminal. The first terminal has an electrical status different between a case where the storage device and a first device are connected, and a case where the storage device and a second device are connected. Through the second terminal, voltage is applied by the first device to the storage device in the case where the storage device and the first device are connected, and a control signal is input from the second device to the storage device in the case where the storage device and the second device are connected. Through the third terminal, power is supplied to the storage device. The switch switches a connection status and a disconnection status.

Abstract: A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg2Si1-xSnx, wherein 0.6?x?0.7, and a first n-type dopant.

Abstract: To provide a thermoelectric conversion material having an enhanced thermoelectromotive force and a production method thereof. A thermoelectric conversion material including a matrix and a barrier material, wherein the matrix contains Mg2Si1-xSnx (x is from 0.50 to 0.80) and an n-type dopant and the barrier material contains Mg2Si1-ySny (y is from 0 to 0.30), and a production method thereof. A thermoelectric conversion material and a production method thereof, in which the movement of minority carrier is blocked by a barrier material and the thermoelectromotive force is thereby enhanced, can be provided.

Abstract: According to one embodiment, a non-volatile semiconductor storage apparatus is configured to decide determination periods respectively corresponding to each of management blocks based on rewrite count information items and a temperature, and to perform a determination processing for each of management blocks for each determination period. The determination processing includes determining whether first data read from a block in the blocks is normal based on the number of errors that are occurred in the first data. The apparatus is configured to perform a rewrite processing of rewriting the first data to second data which is error-corrected when it is determined that the first data is not normal.

Abstract: According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a first terminal, a second terminal, and a third terminal. The first terminal has an electrical status different between a case where the storage device and a first device are connected, and a case where the storage device and a second device are connected. Through the second terminal, voltage is applied by the first device to the storage device in the case where the storage device and the first device are connected, and a control signal is input from the second device to the storage device in the case where the storage device and the second device are connected. Through the third terminal, power is supplied to the storage device. The switch switches a connection status and a disconnection status.

Abstract: A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg2Si1-xSnx, wherein 0.6?x?0.7, and a first n-type dopant.

Abstract: According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a first terminal, a second terminal, and a third terminal. The first terminal has an electrical status different between a case where the storage device and a first device are connected, and a case where the storage device and a second device are connected. Through the second terminal, voltage is applied by the first device to the storage device in the case where the storage device and the first device are connected, and a control signal is input from the second device to the storage device in the case where the storage device and the second device are connected. Through the third terminal, power is supplied to the storage device. The switch switches a connection status and a disconnection status.

Abstract: A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.

Abstract: According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a first terminal, a second terminal, and a third terminal. The first terminal has an electrical status different between a case where the storage device and a first device are connected, and a case where the storage device and a second device are connected. Through the second terminal, voltage is applied by the first device to the storage device in the case where the storage device and the first device are connected, and a control signal is input from the second device to the storage device in the case where the storage device and the second device are connected. Through the third terminal, power is supplied to the storage device. The switch switches a connection status and a disconnection status.

Abstract: A composite particle including a core member including a rare earth ion which shows an upconversion effect and a retaining material which retains the rare earth ion, and a semiconductor member covering a part or all of the surface of the core member, wherein the retaining material includes a semiconductor material having a band gap greater than energy difference necessary for a second step excitation in the rare earth ion to occur, or an insulating material, and the semiconductor member includes a semiconductor material having a band gap smaller than the energy difference between a first excited state and a ground state of the rare earth ion.

Abstract: According to one embodiment, a semiconductor memory device includes: a first component including a controller which issues an instruction complying with a NAND interface; and a second component including a first NAND flash memory which is controlled by the instruction, the second component being removable from the first component.

Abstract: A composite particle including a core member including a rare earth ion which shows an upconversion effect and a retaining material which retains the rare earth ion, and a semiconductor member covering a part or all of the surface of the core member, wherein the retaining material includes a semiconductor material having a band gap greater than energy difference necessary for a second step excitation in the rare earth ion to occur, or an insulating material, and the semiconductor member includes a semiconductor material having a band gap smaller than the energy difference between a first excited state and a ground state of the rare earth ion.

Abstract: According to one embodiment, a non-volatile semiconductor storage apparatus is configured to decide determination periods respectively corresponding to each of management blocks based on rewrite count information items and a temperature, and to perform a determination processing for each of management blocks for each determination period. The determination processing includes determining whether first data read from a block in the blocks is normal based on the number of errors that are occurred in the first data. The apparatus is configured to perform a rewrite processing of rewriting the first data to second data which is error-corrected when it is determined that the first data is not normal.

Abstract: According to one embodiment, a non-volatile semiconductor storage apparatus is configured to decide determination periods respectively corresponding to each of management blocks based on rewrite count information items and a temperature, and to perform a determination processing for each of management blocks for each determination period. The determination processing includes determining whether first data read from a block in the blocks is normal based on the number of errors that are occurred in the first data. The apparatus is configured to perform a rewrite processing of rewriting the first data to second data which is error-corrected when it is determined that the first data is not normal.