Abstract: A color cathode ray tube having electron gun with a plurality of electrodes for generating and focusing three in-line electron beams toward a phosphor screen. A deflection device is mounted between a funnel portion and a neck portion for deflecting the three electron beams in horizontal and vertical directions, and a convergence correction device including a plurality of magnetic pieces positioned with respect to the three electron beams in an in-line direction of the three electron beams in magnetic deflection fields generated by the deflection device.

Abstract: A color cathode ray tube has at least an electron gun, constituted by a cathode for forming a plurality of electron beams arranged in line and a plurality of electrodes, and a fluorescent screen, wherein the plurality of electrodes including an anode are arranged in the axial direction of the tube and have dissimilar potentials, and a main lens is constituted of the anode and another electrode neighboring the anode. The electrode neighboring the anode includes at least two division electrodes having the same potential and being arranged with a gap in the axial direction of the tube, and one of the division electrodes is opposed to the anode and has, in the opposed surface thereof, a single opening for passing the plurality of electron beams in common. The one division electrode opposed to the anode has a length in the axial direction of the tube that is from about 1.0 to about 1.6 times as great as the diameter of the single opening in a direction at right angles with the in-line direction.

Abstract: A color cathode ray tube includes an electron gun having a plurality of electrodes, an electron beam deflection device and a phosphor screen. A deflection defocusing correcting element is located in a deflection magnetic field produced by the deflection device to locally modify the magnetic field in a path of an electron beam and corrects the deflection defocusing of the electron beam corresponding to deflection of the electron beam. The deflection defocusing element includes the magnetic metal plate providing magnetic pole pieces and a non-magnetic metal support for holding the magnetic metal plate in place. The magnetic metal plate and the non-magnetic metal support are laminated or clad one on another, or joined edge-to-edge.

Abstract: A color cathode ray tube includes a vacuum envelope formed by a panel, neck and funnel portions. The cathode ray tube includes a phosphor screen, a shadow mask, an electron gun and a deflection device. The cathode ray tube further includes a convergence correction device having a plurality of magnetic pieces positioned on opposite sides of each of the three electron beams in an in-line direction of the electron beams in a magnetic deflection fields generated by the deflection device. The plurality of magnetic pieces include a first pair of magnetic pieces positioned on a neck wall side of each of side electron beams in the in-line direction and a second pair of magnetic pieces positioned on opposite sides of a center electron beam of the three electron beams in the in-line direction. The plurality of magnetic pieces are configured so as to locally modify the magnetic deflection fields to make three rasters formed on the phosphor screen by the three electron beams coincident with each other.

Abstract: A process for producing an unsaturated alcohol wherein the catalytic activity and the capability of maintaining double bond are sustained for a long time and side-reactions are suppressed. An unsaturated alcohol is obtained by hydrogenating an alkyl or alkenyl ester of an unsaturated fatty acid or a triglyceride having a long-chain aliphatic unsaturated hydrocarbon group in the presence of a catalytic composition which is a composite metal oxide consisting of (a) zinc oxide and (b) oxide(s) of at least one metal selected from the group consisting of the elements of the group 3A in the periodic table and having a weight ratio of (a)/(b) of from 1/0.01 to 1/1.2.

Abstract: A MOS semiconductor device with a double-layer gate electrode structure includes a silicon substrate and a field oxide layer which is selectively formed on one major surface of the substrate in such a manner as to surround an active region. A first silicon oxide layer is deposited in a region of a gate electrode of the semiconductor device. A polycrystalline silicon layer is provided on the first silicon layer and in a portion which extends from the region of the gate electrode to above the field oxide layer. Source and drain diffusion regions are defined in a part of the active region of the major surface of the substrate. An impurity-doped second silicon oxide layer is deposited on the entire surface of a laminate which is constituted by the substrate to the source and drain diffusion regions except for the surface of that portion of the polycrystalline silicon layer which overlies the field oxide layer.

Abstract: A process for producing desulfurized fats and oils or fatty acid esters, which are highly suitable as a starting material for producing alcohols via hydrogenation, at a high yield is disclosed. Desulfurized fats and oils or fatty acid esters are obtained by contacting fats and oils or fatty acid esters with a catalyst represented by the following formula (I) under a hydrogen atmosphere or a mixture of hydrogen with an inert gas:Ni.Cu.sub.x O.sub.y (I)wherein x represents an atomic ratio of Cu determined by referring Ni as 1 and a value of from 0.02 to 8; and y is an atomic ratio of oxygen satisfying the valence requirements of Ni and Cu. A process for producing alcohols using the desulfurized fats and oils or fatty acid esters is also disclosed. A process for producing an alcohols using desulfurized fats and oils or fatty acid esters is also disclosed.

Abstract: A process for producing desulfurized fats and oils or fatty acid esters is disclosed, which comprises treating fats and oils or fatty acid esters under hydrogen or a mixture of hydrogen and an inert gas atmosphere at a pressure of from 0.1 to 500 kg/cm.sup.2 in the absolute pressure at a temperature of from 100.degree. to 350.degree. C. in the presence of a catalyst of the following formula (I):Cu.multidot.X.sub.x .multidot.Y.sub.y .multidot.O.sub.z (I)wherein all symbols are defined in the disclosure. A process for producing an alcohols using desulfurized fats and oils or fatty acid esters is also disclosed. According to the process for producing an alcohol of the present invention, an alcohol of a high purity and good qualities can efficiently and effectively be produced.

Abstract: A process for producing alcohols comprising catalytically reducing fats and oils or fatty acid esters with hydrogen in the presence of a catalyst for ester reduction is disclosed, wherein the starting oils are first treated at a temperature of from 50.degree. to 200.degree. C. in hydrogen gas or a mixed gas of hydrogen and an inert gas in the presence of a nickel catalyst to yield a sulfur content at not more than 0.6 ppm an acid value (KOH mg/g) of not more than 2. By use of the thus purified starting oils, the catalyst for ester reduction exhibits a prolonged duration.

Abstract: A MOS semiconductor device with a double-layer gate electrode structure includes a silicon substrate and a field oxide layer which is selectively formed on one major surface of the substrate in such a manner as to surround an active region. A first silicon oxide layer is deposited in a region of a gate electrode of the semiconductor device. A polycrystalline silicon layer is provided on the first silicon layer and in a portion which extends from the region of the gate electrode to above the field oxide layer. Source and drain diffusion regions are defined in a part of the active region of the major surface of the substrate. An impurity-doped second silicon oxide layer is deposited on the entire surface of a laminate which is constituted by the substrate to the source and drain diffusion regions except for the surface of that portion of the polycrystalline silicon layer which overlies the field oxide layer.

Abstract: Arsenic anhydride of high purity is inexpensively manufactured from an arsenic sulfide-containing substance by first contacting the arsenic sulfide-containing substance with a copper sulfate-containing aqueous solution so as to provide an extract solution containing arsenious acid, the extract solution is subjected to aeration in the presence of copper ions such that the arsenious acid therein is mostly oxidized to arsenic acid, the thus provided treated solution is subjected to a weak reducing agent to cause crystals of arsenious anhydride to form, and these crystals are then recovered.