Abstract: The present invention consists of a photovoltaic device and a method of manufacturing thereof, in which first electrode films (12a, 12b, l and 12c) are separately disposed on a plurality of regions (A, B, and C) of the insulated surface of a substrate (10) and semiconductor photoactive film layers (13) and second electrode films (14) are placed in an overlapping manner on the respective first electrode films. The portions of the semiconductor photoactive layers (13) located in the spacing regions (ab and bc) of the respective second electrode films (14) are removed by etching so that a first electrode film (12a) in one adjacent region is partially exposed.

Abstract: A method of manufacturing a photovoltaic device having a plurality of a photoelectric converting regions formed on an insulating surface of a substrate electrically connected in series, comprises the steps of dividing a first large area electrode layer on an insulating surface of a substrate into a plurality of first electrode layer portions corresponding to a plurality of photoelectric converting regions, depositing in succession a film-like photoelectric semiconductor layer and a second electrode layer lying continuously on the divided first electrode layers, and removing portions of the photoelectric semiconductor layer and the second electrode layer formed continuously to divide them into a plurality of portions corresponding to the plurality of the photoelectric converting regions.

Abstract: A unit fuel injector for internal combustion engines having a fuel injecting pump portion and a fuel injection valve portion which are assembled as a unit in a single injector body (6). The injector body (6) has an upper section into which a check valve (9), barrel (5), plunger (3), and so forth are inserted from the upper side of the injector body. The check valve, barrel, plunger and so forth are secured by means of a barrel holder (7) screwed into the upper section of the injector body. Also a nozzle spring (13), nozzle body (19), nozzle valve (18) and so forth are assembled and placed within from the lower side of the injector body. The nozzle spring, nozzle body, nozzle valve and so forth are fixed by a nozzle nut (20) screwed to the lower section. This arrangement permits the diameter of the unit fuel injector to be reduced to facilitate the mounting in the limited space on a cylinder head of the engine.

Abstract: A fuel injection pump including a pump body formed with a plunger sliding bore, and a discharge valve mounted on one end portion of the plunger sliding bore corresponding to an upper end portion of a plunger so that said end portion of the plunger sliding bore functions as a guide for the discharge valve. This arrangement enables the plunger barrel and discharge valve guide member of a fuel injection pump of the prior art to be dispensed with and permits the number of the parts of the pump, the size of the pump, the weight of the pump and the production to be reduced.

Abstract: A semiconductor element such as a thyristor or a transistor which is capable of withstanding a high voltage comprises a semiconductor substrate of a pnpn-four layer structure (for a thyristor) or of a npn-three layer structure (for a transistor). An intermediate p-type layer is composed of a low concentration layer region located adjacent to an n-type layer and a high concentration layer region located adjacent to the other n-type layer. The high concentration layer region is formed through diffusion of aluminium so that the maximum concentration thereof becomes at least equal to 5.times.10.sup.16 atoms/cm.sup.3. A method of manufacturing such semiconductor element is also disclosed.

Abstract: A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube for diffusing aluminum into the semiconductor substrate. The semiconductor substrate having aluminum diffused therein is then subjected to heat treatment in an atmosphere of oxygen or nitrogen for a required length of time at a temperature higher than that used for the thermal diffusion. The above process provides the desired diffusion profile of aluminum, and a long lifetime of minority carriers in the substrate.