Abstract: The present invention provides a network structure having excellent repeated compression durability, the network structure having a low repeated compression residual strain and a high hardness retention after repeated compression. A network structure comprising a three-dimensional random loop bonded structure obtained by forming random loops with curling treatment of a continuous linear structure including a polyester-based thermoplastic elastomer and having a fineness of not less than 100 dtex and not more than 60000 dtex, and by making each loop mutually contact in a molten state, wherein the network structure has an apparent density of 0.005 g/cm3 to 0.20 g/cm3, a 50%-constant displacement repeated compression residual strain of not more than 15%, and a 50%-compression hardness retention of not less than 85% after 50%-constant displacement repeated compression.

Abstract: A memory associated with an address circuit receiving an address signal to designate a location of the memory to be accessed. The address circuit includes an X-decoder and a Y-decoder associated to the memory, and a multiplexor receiving at least a portion of an address input and adapted to selectively distribute the above portion of the address input to the X-decoder and the Y-decoder. Specifically, the multiplexor receives at least one first bit of a portion of the address signal to be inputted to the X-decoder and at least one second bit of the remaining portion of the address signal to be iputted to the Y-decoder. In a first condition, the multiplexor operates to supply the first bit and the second bit of the address input to the X-decoder and the Y-decoder, respectively. In a second condition, the multiplexor operates to supply the first bit and the second bit of the address input to the Y-decoder and the X-decoder, respectively.