Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.

Abstract: The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.

Abstract: An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers include: a first quantum dot layer doped with a p-type impurity; and a second quantum dot layer doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layer.

Abstract: An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers includes at least one quantum dot player doped with a p-type impurity. Further, the plurality of quantum dot layers includes at least two quantum dot layers having different emission wavelengths and different p-type impurity concentrations.

Abstract: The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.

Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.

Abstract: A semiconductor device has a lateral switching device that includes a channel forming layer, a gate structure portion, a source electrode, a drain electrode, a third semiconductor layer, a fourth semiconductor layer, and a junction gate electrode. The gate structure portion has a gate insulating film provided in a recess portion of the channel forming layer and a MOS gate electrode functioning as a gate electrode of a MOS structure provided on the gate insulating film. The source electrode and the junction gate electrode are coupled through an electrode layer provided on an interlayer insulating film covering the MOS gate electrode. An end of the third semiconductor layer facing the drain electrode protrudes toward the drain electrode from an end of the fourth semiconductor layer facing the drain electrode by a distance in a range of 1 ?m to 5 ?m both inclusive.

Abstract: A semiconductor device has a lateral switching device that includes a channel forming layer, a gate structure portion, a source electrode, a drain electrode, a third semiconductor layer, a fourth semiconductor layer, and a junction gate electrode. The gate structure portion has a gate insulating film provided in a recess portion of the channel forming layer and a MOS gate electrode functioning as a gate electrode of a MOS structure provided on the gate insulating film. The source electrode and the junction gate electrode are coupled through an electrode layer provided on an interlayer insulating film covering the MOS gate electrode. An end of the third semiconductor layer facing the drain electrode protrudes toward the drain electrode from an end of the fourth semiconductor layer facing the drain electrode by a distance in a range of 1 ?m to 5 ?m both inclusive.

Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm?3.

Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm?3.

Abstract: A laser array circuit decreases the size of a circuit pattern. A laser-diode (LD) driving switching element with a low on resistance is used in common with and switches conduction and non-conduction of a large current to each of a plurality of charge capacitors and charge switching elements that accumulate charge in the charge capacitors in respective drive circuits. An LD array and the LD driving switching element are closely located on a light-emitting board. By laying out the LD array and charge capacitors considering only the positional relationship therebetween, the size of a circuit pattern including LDs and the charge capacitors can be decreased.

Abstract: A laser array circuit decreases the size of a circuit pattern. A laser-diode (LD) driving switching element with a low on resistance is used in common with and switches conduction and non-conduction of a large current to each of a plurality of charge capacitors and charge switching elements that accumulate charge in the charge capacitors in respective drive circuits. An LD array and the LD driving switching element are closely located on a light-emitting board. By laying out the LD array and charge capacitors considering only the positional relationship therebetween, the size of a circuit pattern including LDs and the charge capacitors can be decreased.

Abstract: An infrared image sensor has a sensor array composed of plural sensor elements and provided on a silicon substrate. A temperature compensation element is provided on the silicon substrate for each sensor element adjacently to the sensor element, and performs temperature correction to an output of the sensor element. Accordingly, the infrared image sensor can provide stable output even when environmental temperature varies.

Abstract: In a vehicle air conditioning system, a non-contact temperature sensor having plural temperature detecting elements is disposed to detect a predetermined region within a passenger compartment. The plural temperature detecting elements are constructed by plural first elements each of which has a smaller temperature detecting area in the predetermined region, and plural second elements each of which has a larger temperature detecting area in the predetermined region. The non-contact temperature sensor detects an area, where a detail temperature-distribution information is necessary, using the first elements, and detects an area, where the detail temperature-distribution information is unnecessary, using the second elements.

Abstract: In a vehicle air conditioning system, a non-contact temperature sensor having plural temperature detecting elements is disposed to detect a predetermined region within a passenger compartment. The plural temperature detecting elements are constructed by plural first elements each of which has a smaller temperature detecting area in the predetermined region, and plural second elements each of which has a larger temperature detecting area in the predetermined region. The non-contact temperature sensor detects an area, where a detail temperature-distribution information is necessary, using the first elements, and detects an area, where the detail temperature-distribution information is unnecessary, using the second elements.

Abstract: An infrared image sensor has a sensor array composed of plural sensor elements and provided on a silicon substrate. A temperature compensation element is provided on the silicon substrate for each sensor element adjacently to the sensor element, and performs temperature correction to an output of the sensor element. Accordingly, the infrared image sensor can provide stable output even when environmental temperature varies.

Abstract: The groupware development assisting system includes a format definition portion which defines a format of the electronic mail given or received among nodes, an object definition portion which defines the operation condition information of a software object forming one of nodes inputting or outputting the electronic mail, a transferring order definition portion which designates a transferring route showing the delivery and receipt of the electronic mail among the nodes and a format of the electronic mail given or received by the transferring route.

Abstract: A workflow system comprises a workflow definition unit, a workflow operation/control unit, and a workflow estimation/prediction unit, the workflow definition unit further includes, as the definition items, rearrangement definition description that is a list of workflow rearrangement algorithms, the workflow estimation/prediction unit further includes a task finish time inquiry unit for examining the finish prediction time of each task, a completion time prediction unit for predicting the completion time of the workflow operation, a definition analytical unit for analyzing the rearrangement definition description, so to supply the analyzed description of rearrangement definition, a rearrangement algorithm library for providing rearrangement algorithms, and a rearrangement unit for, according to the analyzed description of rearrangement definition, taking out a necessary rearrangement algorithm from the rearrangement algorithm library to execute the same.

Abstract: A workflow system includes workflow defining portion for defining workflow information necessary for operating workflow job to be realized by a sequence of unit businesses for which a plurality of workers are involved, workflow operating and managing portion for managing progress of the workflow job according to workflow information defined by the workflow defining means and urging execution of the unit job, individual information managing portion for managing individual information relating to each worker involving each unit job, and workflow predicting and evaluating projection for obtaining the workflow information defined by the workflow defining means, progress information indicative of progress of job of the workflow job managed by the workflow operating and managing means, and individual information managed by the individual information managing means, and for predicting future progress of the workflow job.

Abstract: Disclosed is a method for producing an optical member having excellent optical characteristics. An optical member is composed of a support plate and an optical sheet stuck on said plate via an optical adhesive. The optical adhesive is made sticky after it is coated, including ultraviolet-curing adhesives, epoxy adhesives and their mixtures. To produce the optical member, the optical sheet is formed on the surface of a fixed substrate via a transfer film. The optical adhesive is coated onto the optical sheet, the adhesive is made sticky on the sheet, the fixed substrate is peeled off, the sheet is stuck onto the support plate using the adhesive, and the adhesive is cured.