Abstract: An input device includes: a touch sensor that detects a position of a touch on an operation surface by an operation finger; a vibration element that vibrates the operation surface; and a controller that changes a magnitude of vibration of the operation surface by the vibration element according to acceleration in movement of the operation finger along the operation surface, the movement being performed while the operation finger is touching the operation surface.

Abstract: This heating device (100) includes: a heater (10) for heating an object (1) to be heated; a temperature detection unit (20) for detecting a temperature of the object (1) to be heated; and a temperature regulator (30) which controls the heater (10) so as to make the temperature of the object (1) to be heated equal to the target temperature. The temperature detection unit (20) comprises temperature sensors (21, 22). An identification unit (34) identifies, from temperature data detected by the temperature sensors (21, 22) and manipulation quantity data corresponding to electric power applied to the heater (10), a heat transfer function between the heater (10) and the temperature sensors (21, 22), and a heat transfer function between the respective temperature sensors (21, 22). A determination unit (36) detects a change of the transfer functions, and determines an abnormality in the heater (10) or the temperature sensors (21, 22).

Abstract: An input device includes: an input member that includes a first surface on which an operation is performed by an operation body and a second surface that is a back surface of the first surface; a first electrode that is disposed on the second surface; a second electrode that faces the first electrode and is disposed spaced apart from the first electrode; and a controller that detects a pressing force applied to the input member by an operation performed by the operation body, based on the electrostatic capacitance between the first electrode and the second electrode, and calculates a pressure-sensitivity value that is a value indicating the pressing force detected. Here, the first electrode is electrically connected to the ground.

Abstract: An input device includes: an input member that includes a first surface on which an operation is performed by an operation body and a second surface that is a back surface of the first surface; a first electrode that is disposed on the second surface; a second electrode that faces the first electrode and is disposed spaced apart from the first electrode; and a controller that detects a pressing force applied to the input member by an operation performed by the operation body, based on the electrostatic capacitance between the first electrode and the second electrode, and calculates a pressure-sensitivity value that is a value indicating the pressing force detected. Here, the first electrode is electrically connected to the ground.

Abstract: An input device includes: a touch sensor that detects a position of a touch on an operation surface by an operation finger; a vibration element that vibrates the operation surface; and a controller that changes a magnitude of vibration of the operation surface by the vibration element according to acceleration in movement of the operation finger along the operation surface, the movement being performed while the operation finger is touching the operation surface.

Abstract: An input device includes a movable section having a touch sensor, and an actuator that is mechanically fixed to the touch sensor and vibrates in a lateral direction; a support that supports the movable section via an elastic component; and a pressure sensor that (i) is disposed on a side opposite to a side on which the support supports the movable section and (ii) detects a pressing operation to the touch sensor. At least one of the movable section and the support transmits a force from the pressing operation to the pressure sensor due to the movable section and the support moving integrally and as a whole in a direction of the pressing operation when the pressing operation is performed.

Abstract: A main body includes an input component that receives a load. A pressure-sensitive sensor detects the load received by the input component. A drive unit performs a predetermined operation. A drive controller activates the drive unit when the load detected by the pressure-sensitive sensor reaches a predetermined load threshold. A detection controller changes the predetermined load threshold in accordance with the rate of change in the load detected by the pressure-sensitive sensor.

Abstract: A semiconductor light emitting element includes a structure in which a first clad layer having a first conductivity type, an active layer in which a quantum well layer is enclosed between barrier layers, and a second clad layer having a second conductivity type opposite to the first conductivity type are sequentially laminated on at least a substrate, wherein the quantum well layer is constituted by an In-based compound semiconductor that does not contain Al, and the active layer contains a higher concentration of Al than at least the barrier layer in an interface between the quantum well layer and the barrier layer where changing from the quantum well layer to the barrier layer when seen from a side of the substrate.

Abstract: This heating device (100) includes: a heater (10) for heating an object (1) to be heated; a temperature detection unit (20) for detecting a temperature of the object (1) to be heated; and a temperature regulator (30) which controls the heater (10) so as to make the temperature of the object (1) to be heated equal to the target temperature. The temperature detection unit (20) comprises temperature sensors (21, 22). An identification unit (34) identifies, from temperature data detected by the temperature sensors (21, 22) and manipulation quantity data corresponding to electric power applied to the heater (10), a heat transfer function between the heater (10) and the temperature sensors (21, 22), and a heat transfer function between the respective temperature sensors (21, 22). A determination unit (36) detects a change of the transfer functions, and determines an abnormality in the heater (10) or the temperature sensors (21, 22).

Abstract: An input device includes a movable section having a touch sensor, and an actuator that is mechanically fixed to the touch sensor and vibrates in a lateral direction; a support that supports the movable section via an elastic component; and a pressure sensor that (i) is disposed on a side opposite to a side on which the support supports the movable section and (ii) detects a pressing operation to the touch sensor. At least one of the movable section and the support transmits a force from the pressing operation to the pressure sensor due to the movable section and the support moving integrally and as a whole in a direction of the pressing operation when the pressing operation is performed.

Abstract: A technique for accurately detecting a temperature of a sealing surface which is not affected by sealing conditions or the like is provided. A seal bar (1) is a rod-shaped seal bar having a sealing surface (11a) and includes a heater (13) and a temperature sensor (14). The heater (13) is provided in a main body of the seal bar (1) and extends in an extending direction (D1) of the main body (11). The temperature sensor (14) is provided at a position between the sealing surface (11a) and the heater (13) in the main body (11) of the seal bar (1) and is inserted into the main body (11) of the seal bar (1) from an end surface (upper end surface (112) or the like) which intersects a long side of the sealing surface (11a).

Abstract: A main body includes an input component that receives a load. A pressure-sensitive sensor detects the load received by the input component. A drive unit performs a predetermined operation. A drive controller activates the drive unit when the load detected by the pressure-sensitive sensor reaches a predetermined load threshold. A detection controller changes the predetermined load threshold in accordance with the rate of change in the load detected by the pressure-sensitive sensor.

Abstract: A light-emitting layer includes: a base layer with a plurality of base segments that have a composition subject to stress strain from a first semiconductor layer and are formed in a random net shape; and a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer. The base layer includes: a first sub-base layer; a trench that partitions the first sub-base layer for each of the plurality of base segments; and a second sub-base layer formed to bury the first sub-base layer.

Abstract: A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer including a light emitting layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and of a conductivity type opposite to the conductivity type of the first semiconductor layer. The light-emitting layer has: a base layer that has a composition subject to stress strain from the first semiconductor layer and a plurality of base segments formed in a random net shape; and a quantum well structure layer formed by embedding the base layer and composed of at least one quantum well layer and at least one barrier layer. The base layer has a plurality of sub-base layers composed of AlGaN with different Al compositions.

Abstract: A technique for accurately detecting a temperature of a sealing surface which is not affected by sealing conditions or the like is provided. A seal bar (1) is a rod-shaped seal bar having a sealing surface (11a) and includes a heater (13) and a temperature sensor (14). The heater (13) is provided in a main body of the seal bar (1) and extends in an extending direction (D1) of the main body (11). The temperature sensor (14) is provided at a position between the sealing surface (11a) and the heater (13) in the main body (11) of the seal bar (1) and is inserted into the main body (11) of the seal bar (1) from an end surface (upper end surface (112) or the like) which intersects a long side of the sealing surface (11a).

Abstract: A light-emitting layer includes: a base layer with a plurality of base segments that have a composition subject to stress strain from a first semiconductor layer and are formed in a random net shape; and a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer. The base layer includes: a first sub-base layer; a trench that partitions the first sub-base layer for each of the plurality of base segments; and a second sub-base layer formed to bury the first sub-base layer.

Abstract: A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer including a light emitting layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and of a conductivity type opposite to the conductivity type of the first semiconductor layer. The light-emitting layer has: a base layer that has a composition subject to stress strain from the first semiconductor layer and a plurality of base segments formed in a random net shape; and a quantum well structure layer formed by embedding the base layer and composed of at least one quantum well layer and at least one barrier layer. The base layer has a plurality of sub-base layers composed of AlGaN with different Al compositions.

Abstract: A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.

Abstract: A semiconductor light emitting diode of the present invention includes a semiconductor layer including a light emitting portion, and a pad electrode located on the semiconductor layer, the semiconductor light emitting diode further including, between the semiconductor layer and the pad electrode, a reflective portion including a light transmitting insulating layer serving as a current blocking layer located on the semiconductor layer, and a reflective layer located on the light transmitting insulating layer; a contact portion formed from an ohmic electrode in contact with the reflective portion, located on the semiconductor layer; and a conductive hard film between the reflective layer and the pad electrode, the conductive hard film having HV×t>630, where the Vickers hardness is HV (Hv) and the thickness is t (?m).

Abstract: In a lens actuator according to an exemplary embodiment, wires that connect a holder and a base of a movable unit have diameters of 30 ?m or more and less than 70 ?m, and the wires have longitudinal elastic moduli of 100 GPa or more and less than 500 GPa. The wire is flexible even if a small amount of currents are passed through a plurality of OIS coils, and the lens actuator suitable to electric power saving can be provided.