Patents by Inventor Hiroyuki Tomatsu
Hiroyuki Tomatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9893195Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.Type: GrantFiled: December 22, 2014Date of Patent: February 13, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kosei Noda, Shunpei Yamazaki, Tatsuya Honda, Yusuke Sekine, Hiroyuki Tomatsu
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Patent number: 9768207Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: GrantFiled: July 22, 2016Date of Patent: September 19, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Tsubuku, Shuhei Yoshitomi, Takahiro Tsuji, Miyuki Hosoba, Junichiro Sakata, Hiroyuki Tomatsu, Masahiko Hayakawa
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Patent number: 9530806Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: GrantFiled: October 23, 2014Date of Patent: December 27, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Tsubuku, Shuhei Yoshitomi, Takahiro Tsuji, Miyuki Hosoba, Junichiro Sakata, Hiroyuki Tomatsu, Masahiko Hayakawa
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Publication number: 20160329359Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: ApplicationFiled: July 22, 2016Publication date: November 10, 2016Inventors: Masashi TSUBUKU, Shuhei YOSHITOMI, Takahiro TSUJI, Miyuki HOSOBA, Junichiro SAKATA, Hiroyuki TOMATSU, Masahiko HAYAKAWA
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Patent number: 9490267Abstract: A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.Type: GrantFiled: January 16, 2015Date of Patent: November 8, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Fujita, Yutaka Shionoiri, Hiroyuki Tomatsu, Hidetomo Kobayashi
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Patent number: 9406706Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: GrantFiled: October 23, 2014Date of Patent: August 2, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Tsubuku, Shuhei Yoshitomi, Takahiro Tsuji, Miyuki Hosoba, Junichiro Sakata, Hiroyuki Tomatsu, Masahiko Hayakawa
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Patent number: 9117701Abstract: Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor.Type: GrantFiled: April 30, 2012Date of Patent: August 25, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroyuki Tomatsu, Hidetomo Kobayashi, Yutaka Shionoiri
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Publication number: 20150137121Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.Type: ApplicationFiled: December 22, 2014Publication date: May 21, 2015Inventors: Kosei NODA, Shunpei YAMAZAKI, Tatsuya HONDA, Yusuke SEKINE, Hiroyuki TOMATSU
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Publication number: 20150129873Abstract: A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.Type: ApplicationFiled: January 16, 2015Publication date: May 14, 2015Inventors: Masashi FUJITA, Yutaka SHIONOIRI, Hiroyuki TOMATSU, Hidetomo KOBAYASHI
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Publication number: 20150044818Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: ApplicationFiled: October 23, 2014Publication date: February 12, 2015Inventors: Masashi TSUBUKU, Shuhei YOSHITOMI, Takahiro TSUJI, Miyuki HOSOBA, Junichiro SAKATA, Hiroyuki TOMATSU, Masahiko HAYAKAWA
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Patent number: 8946066Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.Type: GrantFiled: May 2, 2012Date of Patent: February 3, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kosei Noda, Shunpei Yamazaki, Tatsuya Honda, Yusuke Sekine, Hiroyuki Tomatsu
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Patent number: 8941958Abstract: To provide a protection circuit having a small area, redundancy, and small leak current. In the protection circuit, a plurality of nonlinear elements is provided so as to overlap with each other and so as to be electrically connected in series. At least one nonlinear element in the protection circuit is a diode-connected transistor including an oxide semiconductor in its channel formation region. The other nonlinear element is a diode-connected transistor including silicon in its channel formation region or a diode including silicon in its junction region.Type: GrantFiled: April 17, 2012Date of Patent: January 27, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Hiroyuki Tomatsu
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Patent number: 8937304Abstract: A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.Type: GrantFiled: January 24, 2012Date of Patent: January 20, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Fujita, Yutaka Shionoiri, Hiroyuki Tomatsu, Hidetomo Kobayashi
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Patent number: 8889496Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: GrantFiled: June 13, 2013Date of Patent: November 18, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Tsubuku, Shuhei Yoshitomi, Takahiro Tsuji, Miyuki Hosoba, Junichiro Sakata, Hiroyuki Tomatsu, Masahiko Hayakawa
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Publication number: 20130280857Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: ApplicationFiled: June 13, 2013Publication date: October 24, 2013Inventors: Masashi TSUBUKU, Shuhei YOSHITOMI, Takahiro TUJI, Miyuki HOSOBA, Junichiro SAKATA, Hiroyuki TOMATSU, Masahiko HAYAKAWA
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Patent number: 8466014Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: GrantFiled: July 26, 2012Date of Patent: June 18, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Tsubuku, Shuhei Yoshitomi, Takahiro Tuji, Miyuki Hosoba, Junichiro Sakata, Hiroyuki Tomatsu, Masahiko Hayakawa
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Patent number: 8436518Abstract: An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive.Type: GrantFiled: September 27, 2010Date of Patent: May 7, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masahiko Hayakawa, Koichiro Kamata, Hiroyuki Tomatsu, Hisao Ikeda, Junichiro Sakata
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Publication number: 20120289008Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.Type: ApplicationFiled: July 26, 2012Publication date: November 15, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Masashi TSUBUKU, Shuhei YOSHITOMI, Takahiro TUJI, Miyuki HOSOBA, Junichiro SAKATA, Hiroyuki TOMATSU, Masahiko HAYAKAWA
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Publication number: 20120286260Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.Type: ApplicationFiled: May 2, 2012Publication date: November 15, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kosei NODA, Shunpei YAMAZAKI, Tatsuya HONDA, Yusuke SEKINE, Hiroyuki TOMATSU
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Publication number: 20120281469Abstract: Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor.Type: ApplicationFiled: April 30, 2012Publication date: November 8, 2012Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroyuki TOMATSU, Hidetomo KOBAYASHI, Yutaka SHIONOIRI