Abstract: There is provided a deposition mask in which a plurality of pixel openings are disposed in a surface, of a deposition mask, which is to face a substrate on which a deposition pattern is deposited. Protrusions including a material different from a material included in the deposition mask are formed in a region which is located from a pixel opening that is disposed at an outermost peripheral portion in the surface, from among the plurality of pixel openings, up to an edge of the deposition mask. In the deposition mask, a crosspiece which is located between two pixel openings adjacent to each other, from among the plurality of pixel openings include the material.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: In a case where a third web page corresponding to the second domain is displayed based on an operation in the second web page, control is performed based on a referrer in the third web page such that the inquiry area is not displayed, even without receipt of the first operation or a second operation indicating rejection of use of the cookie in the inquiry area displayed together with the second web page.

Abstract: A storage device (1) according to an aspect of the present disclosure includes a plurality of storage elements (e.g., MTJ element 10) each including a fixed layer with a fixed magnetization direction, a storage layer with a changeable magnetization direction, and an insulating layer provided between the fixed layer and the storage layer, an underlayer (e.g., lower insulating layer 32) on which the plurality of storage elements is provided in an array, and a semiconductor substrate (200) having a surface on which the underlayer is laminated. The underlayer has an inclined surface (M2) inclined with respect to the surface, and any of the plurality of storage elements is provided on the inclined surface (M2).

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: A device for acquiring a positional relationship between a robot coordinate system set in a robot and a working machine coordinate system set in a working machine installed outside the robot, includes a position data acquisition unit that acquires, when a finger part of the robot is placed in a predetermined position and posture with respect to the working machine, first position data indicating the position and posture of the finger part with respect to the robot coordinate system, and second position data indicating the position and the posture of the finger part with respect to the working machine coordinate system; and a positional relationship acquisition unit that acquires third position data indicating the positional relationship using the first position data and the second position data.

Abstract: A semiconductor apparatus includes a nonvolatile memory cell array including a plurality of first memory cells and a plurality of second memory cells including a first memory element 11 and a second memory element 12 including a resistance-variable nonvolatile memory element and a first selection transistor electrically connected to the first memory element 11 and the second memory element 12, in which a plurality of first memory elements 11 and a plurality of second memory elements 12 are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction and on the same interlayer insulating layer, the first memory element 11 is larger than the second memory element 12, and the first memory element 11 and the second memory element 12 are disposed adjacent to each other along the second direction.

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: A control method of controlling an information processing apparatus includes displaying an image corresponding to one section of a plurality of sections of a predetermined operation for another apparatus, which is different from the information processing apparatus, in a predetermined display area, displaying a plurality of thumbnails corresponding to the plurality of sections, and in a case where a user selects a thumbnail from the plurality of thumbnails, controlling in such a manner that an image corresponding to a section of the plurality of sections corresponding to the selected thumbnail is displayed in the predetermined display area, wherein information that represents a section number of a corresponding section of the plurality of sections is added to the plurality of thumbnails.

Abstract: The present disclosure is intended to provide a technique which enables a direct visual comparison between a computationally-machined surface profile determined based on motor position information and a machined surface profile obtained by actual measurement of a machined surface.

Abstract: In a vehicle subframe 1, a first side member has a first extending portion that extends while being deflected outward on one side in a width direction as approaching from a rear side to a front side, a second side member has a second extending portion that extends while being deflected outward on the other side in the width direction as approaching from the rear side to the front side, and a second cross member is further included which is opposed to the first cross member on the front side thereof and couples a portion of the first extending portion in which the degree of outward deflection on the one side in the width direction becomes large and a portion of the second extending portion in which the degree of outward deflection on the other side in the width direction becomes large to each other.

Abstract: A magnetic storage element and an electronic apparatus having a reduced writing current while retaining a magnetism retention property of a storage layer. The magnetic storage element includes a spin orbit layer extending in one direction, a writing line that is electrically coupled to the spin orbit layer, and allows a current to flow in an extending direction of the spin orbit layer, a tunnel junction element including a storage layer, an insulator layer, and a magnetization fixed layer that are stacked in order on the spin orbit layer, and a non-magnetic layer having a film thickness of 2 nm or less, and disposed at any stack position between the spin orbit layer and the insulator layer.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Abstract: There is provided a method for evaluating the cleanliness of a steel material by an ultrasonic flaw detection method enabling rapid acquisition of highly reliable data. Ultrasonic flaw detection is performed to detect a flaw in at least one part in the range of 90% or more and 100% or less of a steel material (for example, round bar 2) at a radial position where the center of the steel material is set as 0% and the surface is set as 100%, and then the cleanliness is evaluated based on the dimension and the number of inclusions in the steel material obtained by the ultrasonic flaw detection.

Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at 30 atm % or more and 80 atm % or less.

Abstract: In a vehicle subframe 1, a pair of side members 110 and 130 includes upper side members 111 and 131 and lower side members 117 and 137, respectively, the lower side members 117 and 137 extending opposed on a downward side to the upper side members 111 and 131 while being elongated to a rearward side, and a pair of mounting members 60 and 80 is joined respectively to the lower side members 117 and 137 of the pair of side members 110 and 130.

Abstract: A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.