Patents by Inventor Hiroyuki Uchiuzo

Hiroyuki Uchiuzo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7973320
    Abstract: An organic semiconductor light-emitting device having the form of a field-effect transistor and a display using this device is provided. In the device, electrons and holes can be transported. The device comprises an organic semiconductor light-emitting layer capable of emitting light by recombination of holes and electrons, a hole injection electrode for injecting holes into the organic semiconductor light-emitting layer, an electron injection electrode for injecting electrons into the organic semiconductor light-emitting layer, and a gate electrode so disposed as to be opposed to the organic semiconductor light-emitting layer between the electrodes. When a control voltage is applied to the gate electrode, the carrier distribution in the organic semiconductor light-emitting layer is controlled. Thus, the light emission can be turned on/off and the emission intensity can be modulated.
    Type: Grant
    Filed: August 26, 2005
    Date of Patent: July 5, 2011
    Assignees: Kyoto University, Pioneer Corporation, Hitachi, Ltd., Rohm Co., Ltd.
    Inventors: Takahito Oyamada, Hiroyuki Uchiuzo, Chihaya Adachi
  • Publication number: 20080164460
    Abstract: An organic semiconductor light-emitting device having the form of a field-effect transistor and a display using this device is provided. In the device, electrons and holes can be transported. The device comprises an organic semiconductor light-emitting layer capable of emitting light by recombination of holes and electrons, a hole injection electrode for injecting holes into the organic semiconductor light-emitting layer, an electron injection electrode for injecting electrons into the organic semiconductor light-emitting layer, and a gate electrode so disposed as to be opposed to the organic semiconductor light-emitting layer between the electrodes. When a control voltage is applied to the gate electrode, the carrier distribution in the organic semiconductor light-emitting layer is controlled. Thus, the light emission can be turned on/off and the emission intensity can be modulated.
    Type: Application
    Filed: August 26, 2005
    Publication date: July 10, 2008
    Applicants: Kyoto University, Pioneer Corporation, Hitachi, Ltd., Rohm Co., Ltd.
    Inventors: Takahito Oyamada, Hiroyuki Uchiuzo, Chinaya Adachi