Abstract: A semiconductor device according to the present embodiment includes a first substrate, a resin layer, and a wire. The first substrate has a first face. The resin layer is provided on the first face and has a second face on an opposite side to the first face. The wire is provided so as to penetrate the resin layer and protrude from the second face. The wire includes a large-width part which is provided at an end of the wire protruding from the second face and which is wider than a width of the wire penetrating the resin layer. The large-width part is arranged so as to come into contact with the second face.

Abstract: A semiconductor device includes a first substrate and a second substrate that is stacked on a first surface of the first substrate in a stacking direction and includes a second surface facing the first surface. A plurality of first terminals is provided on the first surface of the first substrate. A plurality of second terminals is provided on the second surface of the second substrate. A plurality of metallic portions is respectively provided between the plurality of first terminals and the plurality of second terminals. In a cross-section substantially perpendicular to the stacking direction, at least one of (i) each of the plurality of first terminals or (ii) each of the plurality of second terminals (a) includes a recessed portion in a first direction toward an adjacent first terminal or second terminal or (b) includes a projecting portion in a second direction intersecting with the first direction.

Abstract: A semiconductor device includes a first semiconductor chip including a conductive pad, an insulating layer provided on the conductive pad, and having an aperture exposing a part of the conductive pad, and a first bump layer provided on the insulating layer and connected to the conductive pad via the aperture, and a second semiconductor chip including an electrode and a second bump layer provided on the electrode. The first bump layer includes a recessed portion provided at the aperture and in contact with the second bump layer, and a raised portion provided adjacent the aperture and in contact with the second bump layer.

Abstract: A semiconductor device includes a first substrate and a second substrate that is stacked on a first surface of the first substrate in a stacking direction and includes a second surface facing the first surface. A plurality of first terminals is provided on the first surface of the first substrate. A plurality of second terminals is provided on the second surface of the second substrate. A plurality of metallic portions is respectively provided between the plurality of first terminals and the plurality of second terminals. In a cross-section substantially perpendicular to the stacking direction, at least one of (i) each of the plurality of first terminals or (ii) each of the plurality of second terminals (a) includes a recessed portion in a first direction toward an adjacent first terminal or second terminal or (b) includes a projecting portion in a second direction intersecting with the first direction.

Abstract: A fluid control device for mixing liquids, includes at least: a monolithic base body; and a plurality of micro holes disposed in the base body. Also, the micro holes in a flow channel group ? that configures a specific group have opening portions in a region A and a region B on surfaces being outer surfaces of the base body, the micro holes in a flow channel group ? (n) that configures the other specific group have opening portions in the region A and a region C (n) on the surfaces being outer surfaces of the base body, and in the base body, the micro holes are disposed apart from the micro holes belonging to the different flow channel group throughout entire lengths. Here, the n refers to a natural number.

Abstract: A fluid control device for mixing liquids, includes at least: a monolithic base body; and a plurality of micro holes disposed in the base body. Also, the micro holes in a flow channel group ? that configures a specific group have opening portions in a region A and a region B on surfaces being outer surfaces of the base body, the micro holes in a flow channel group ? (n) that configures the other specific group have opening portions in the region A and a region C (n) on the surfaces being outer surfaces of the base body, and in the base body, the micro holes are disposed apart from the micro holes belonging to the different flow channel group throughout entire lengths. Here, the n refers to a natural number.

Abstract: A method of manufacturing a substrate including a micro hole, includes: setting a scanning rate (?m/sec) of pulsed laser light to 1×103 to 4000×103 ?m/sec; adjusting a repetition rate (Hz) of the laser light so that a pulse pitch (?m) represented by the following Formula (1) is 0.08 to 0.8 ?m; scanning the inside of the substrate with the focal point into which the laser light is collected, thereby forming a modified region having a lowered resistance to etching, at a region through which the focal point passed or at an adjacent region thereof; and forming a micro hole in the substrate by removing the modified region by an etching treatment.

Abstract: An interposer substrate of the invention includes: a single substrate having a first main surface and a second main surface; and a plurality of through-hole interconnections having first portions formed so as to extend in parallel with each other and connecting the first main surface to the second main surface, wherein the through-hole interconnections adjacent to each other are provided so that ideal axes are parallel to each other with a distance therebetween, and the ideal axes extend perpendicular to at least one of the first main surface and the second main surface and penetrate through centers of the first portions.