Abstract: A boding device includes a light guiding part that guides laser beam oscillated from a laser oscillator, a bonding head that heats a chip with the laser beam, and a bonding head moving part that moves the bonding head between a supply position and a bonding position. The laser oscillator is separated from the bonding head. The light guiding part includes an irradiation barrel that is provided in the vicinity of the bonding position and, a shutter part that is provided in the irradiation barrel, and a light receiving part that is provided in the bonding head and guides the laser beam to the chip. When the bonding head moving part moves the bonding head to the bonding position, the shutter part is opened so that the laser beam from the irradiation barrel is guided to the bonding head through the light receiving part.

Abstract: A bonding head 6 is provided with a tool base 8 in a housing 6A and a laser for transmitting laser beam L is configured such that the laser beam L transmitted through this tool base 8 can heat an electronic component 3 and bond the same to a substrate 2. A surface of a heat-radiating member 15 is provided in contact with a surface of the tool base 8 on which the laser beam L impinges. This heat-radiating member 15 has a light transmittance for transmitting the laser beam L and also has a thermal conductivity higher than the thermal conductivity of the tool base 8. The tool base 8 is heated during bonding treatment, but heat transmitted to the tool base 8 rapidly escapes to the heat-radiating member 15 having a higher thermal conductivity.

Abstract: A bonding device includes: a plurality of laser oscillators that oscillate laser beams; a plurality of guide beam parts that guide the laser beams oscillated from the laser oscillators; a bonding tool that is irradiated and heated by the laser beams guided from the guide beam parts so that an electronic part held on the bonding tool is heated by the laser beams and is bonded to a base plate. The bonding tool is segmented into a plurality of heat regions, each of the heat regions is irradiated by the laser beams that are guided through the guide beam parts so that some of the heat regions are heated at a temperature different from other heat regions, and an insulation part is disposed at a middle section between two of the heat regions, the insulation part suppressing a heat transfer between the heat regions.

Abstract: A chip attraction passage 23 is provided extending through a housing 5A, a tool base 13, and a bonding tool 14. When the chip attraction passage 23 is attracted by the vacuum source 32, a semiconductor chip 3 can be attracted to and held on the lower surface of the bonding tool 14. The tool base 13 is configured by laminating transmitting members 11 and 12. A connection passage 29, which is a main part of the chip attraction passage 23, is configured by a groove 12B formed on the upper surface of the transmitting member 12 and a through-hole 12A in the center of the transmitting member 12. When the semiconductor chip 3 is heated by laser beams L and bonded to a substrate 2, even if flux or the like adhering to bumps 35 transpires and adheres in the connection passage 29.

Abstract: A bonding device includes: a plurality of laser oscillators that oscillate laser beams; a plurality of guide beam parts that guide the laser beams oscillated from the laser oscillators; a bonding tool that is irradiated and heated by the laser beams guided from the guide beam parts so that an electronic part held on the bonding tool is heated by the laser beams and is bonded to a base plate. The bonding tool is segmented into a plurality of heat regions, each of the heat regions is irradiated by the laser beams that are guided through the guide beam parts so that some of the heat regions are heated at a temperature different from other heat regions, and an insulation part is disposed at a middle section between two of the heat regions, the insulation part suppressing a heat transfer between the heat regions.

Abstract: A boding device includes a light guiding part that guides laser beam oscillated from a laser oscillator, a bonding head that heats a chip with the laser beam, and a bonding head moving part that moves the bonding head between a supply position and a bonding position. The laser oscillator is separated from the bonding head. The light guiding part includes an irradiation barrel that is provided in the vicinity of the bonding position and, a shutter part that is provided in the irradiation barrel, and a light receiving part that is provided in the bonding head and guides the laser beam to the chip. When the bonding head moving part moves the bonding head to the bonding position, the shutter part is opened so that the laser beam from the irradiation barrel is guided to the bonding head through the light receiving part.

Abstract: A bonding head 6 is provided with a tool base 8 in a housing 6A and transmitting laser beam L is configured such that the laser beam L transmitted through this tool base 8 can heat an electronic component 3 and bond the same to a substrate 2. A surface of a heat radiating member 15 is provided in contact with a surface of the tool base 8 on which the laser beam L impinges. This heat radiating member 15 has light transmittance for transmitting the laser beam L and also has thermal conductivity larger than the thermal conductivity of the tool base 8. The tool base 8 is heated during bonding treatment, but heat transmitted to the tool base 8 rapidly escapes to the heat radiating member 15 having larger thermal conductivity.

Abstract: A chip attraction passage 23 is provided extending through a housing 5A, a tool base 13, and a bonding tool 14. When the chip attraction passage 23 is attracted by the vacuum source 32, a semiconductor chip 3 can be attracted to and held on the lower surface of the bonding tool 14. The tool base 13 is configured by laminating transmitting members 11 and 12. A connection passage 29, which is a main part of the chip attraction passage 23, is configured by a groove 12B formed on the upper surface of the transmitting member 12 and a through-hole 12A in the center of the transmitting member 12. When the semiconductor chip 3 is heated by laser beams L and bonded to a substrate 2, even if flux or the like adhering to bumps 35 transpires and adheres in the connection passage 29.