Patents by Inventor Hiruzu Yamaguchi

Hiruzu Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030045086
    Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.
    Type: Application
    Filed: September 4, 2002
    Publication date: March 6, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Junji Noguchi, Naofumi Ohashi, Kenichi Takeda, Tatsuyuki Saito, Hiruzu Yamaguchi, Nobuo Owada
  • Publication number: 20030001277
    Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.
    Type: Application
    Filed: September 4, 2002
    Publication date: January 2, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Junji Noguchi, Naofumi Ohashi, Kenichi Takeda, Tatsuyuki Saito, Hiruzu Yamaguchi, Nobuo Owada