Abstract: In a reflection type liquid crystal panel, the flatness of a surface of a pixel electrode is secured. A drain electrode is extended to the lower portion of a reflecting pixel electrode. The drain electrode and an auxiliary capacitance electrode form an auxiliary capacitance. The drain electrode, a gate electrode, and a source wiring line exist, so that the roughness of the surface on which a resin layer is formed, is relaxed, and the securing of flatness by the resin layer is made easy. In this way, the reflecting pixel electrode can be formed on the flat surface.

Abstract: A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.