Patents by Inventor Hisahiko Abe
Hisahiko Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7070477Abstract: In a wafer polishing method, a within-wafer distribution model of a removal rate and a within-wafer distribution model of a polishing process are selected, and a within-wafer distribution of a removal rate is obtained by determining parameters of a within-wafer distribution model of a removal rate based on the within-wafer distribution of the film thickness before/after CMP, polishing condition data, and the selected within-wafer distribution model of the polishing process of the polished wafer. Then, a film thickness in the polishing process is estimated from passage of time based on the obtained within-wafer distribution of the removal rate, the selected within-wafer distribution model of the polishing process, and the film thickness before CMP of the wafer to be processed, thereby determining the polishing conditions with a restriction that the film thickness at each position in the within-wafer distribution of the film thickness after CMP satisfies the control limit.Type: GrantFiled: April 29, 2005Date of Patent: July 4, 2006Assignee: Hitachi, Ltd.Inventors: Toshihiro Morisawa, Hisahiko Abe, Kosaku Tachikawa, Toshihiro Nakajima
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Patent number: 6995058Abstract: The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).Type: GrantFiled: June 28, 2002Date of Patent: February 7, 2006Assignee: Renesas Technology Corp.Inventors: Kazufumi Suenaga, Kiyoshi Ogata, Kazuhiko Horikoshi, Jun Tanaka, Hisayuki Kato, Keiichi Yoshizumi, Hisahiko Abe
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Patent number: 6979650Abstract: In order to reduce micro scratches which tend to occur during chemical-mechanical polishing, a polishing slurry is diluted with deionized water immediately before it is supplied in a gap between a polishing pad and the surface of a wafer to be polished. By diluting the polishing slurry with deionized water to increase its volume, the concentration of coagulated particles contained in the polishing slurry can be lowered. For a mixture ratio of the polishing slurry and deionized water, about 1 (polishing slurry): 1–1.2 (deionized water) is used, and the concentration of silica contained in the diluted polishing slurry is adjusted to about 3–9 weight %, preferably about 4–8 weight %, and more preferably about 8 weight %.Type: GrantFiled: July 6, 2004Date of Patent: December 27, 2005Assignee: Renesas Technology Corp.Inventors: Shinichi Nakabayshi, Hisahiko Abe, Hirofumi Tsuchiyama, Masaki Hiyama, Takashi Nishiguchi
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Publication number: 20050245169Abstract: In a wafer polishing method, a within-wafer distribution model of a removal rate and a within-wafer distribution model of a polishing process are selected, and a within-wafer distribution of a removal rate is obtained by determining parameters of a within-wafer distribution model of a removal rate based on the within-wafer distribution of the film thickness before/after CMP, polishing condition data, and the selected within-wafer distribution model of the polishing process of the polished wafer. Then, a film thickness in the polishing process is estimated from passage of time based on the obtained within-wafer distribution of the removal rate, the selected within-wafer distribution model of the polishing process, and the film thickness before CMP of the wafer to be processed, thereby determining the polishing conditions with a restriction that the film thickness at each position in the within-wafer distribution of the film thickness after CMP satisfies the control limit.Type: ApplicationFiled: April 29, 2005Publication date: November 3, 2005Inventors: Toshihiro Morisawa, Hisahiko Abe, Kosaku Tachikawa, Toshihiro Nakajima
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Publication number: 20040248418Abstract: In order to reduce micro scratches which tend to occur during chemical-mechanical polishing, a polishing slurry is diluted with deionized water immediately before it is supplied in a gap between a polishing pad and the surface of a wafer to be polished. By diluting the polishing slurry with deionized water to increase its volume, the concentration of coagulated particles contained in the polishing slurry can be lowered. For a mixture ratio of the polishing slurry and deionized water, about 1 (polishing slurry): 1-1.2 (deionized water) is used, and the concentration of silica contained in the diluted polishing slurry is adjusted to about 3-9 weight %, preferably about 4-8 weight %, and more preferably about 8 weight %.Type: ApplicationFiled: July 6, 2004Publication date: December 9, 2004Applicant: Renesas Technology CorporationInventors: Shinichi Nakabayshi, Hisahiko Abe, Hirofumi Tsuchiyama, Masaki Hiyama, Takashi Nishiguchi
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Publication number: 20030124858Abstract: For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface of individual wafers running through a mass-production process so as to suppress the occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a container for at least 30 days or more, preferably 40 days or more, and more preferably 50 days or more, so that the concentration of coagulated particles having a size of 1 &mgr;m or more is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.Type: ApplicationFiled: December 16, 2002Publication date: July 3, 2003Inventors: Shinichi Nakabayashi, Hisahiko Abe, Katsuhiro Ota
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Patent number: 6579754Abstract: The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).Type: GrantFiled: May 8, 2001Date of Patent: June 17, 2003Assignee: Hitachi, Ltd.Inventors: Kazufumi Suenaga, Kiyoshi Ogata, Kazuhiko Horikoshi, Jun Tanaka, Hisayuki Kato, Keiichi Yoshizumi, Hisahiko Abe
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Patent number: 6514864Abstract: For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 &mgr;m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.Type: GrantFiled: May 15, 2001Date of Patent: February 4, 2003Assignee: Hitachi, Ltd.Inventors: Shinichi Nakabayashi, Hisahiko Abe, Katsuhiro Ota
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Publication number: 20020182754Abstract: The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).Type: ApplicationFiled: June 28, 2002Publication date: December 5, 2002Inventors: Kazufumi Suenaga, Kiyoshi Ogata, Kazuhiko Horikoshi, Jun Tanaka, Hisayuki Kato, Keiichi Yoshizumi, Hisahiko Abe
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Publication number: 20020155650Abstract: The subject of the present invention is to reduce micro scratches by applying chemical-mechanical polishing. A polishing slurry is diluted with deionized water immediately before it is supplied in a gap between a polishing pad and the surface to be polished of a wafer. By diluting the polishing slurry with deionized water to increase its volume, the concentration of coagulated particles contained in the polishing slurry can be lowered. For a mixture ratio of the polishing slurry and deionized water, about 1 (polishing slurry): 1-1.2 (deionized water) is used and the concentration of silica contained in the diluted polishing slurry is adjusted to about 3-9 weight %, preferably about 4-8 weight % and more preferably about 8 weight %.Type: ApplicationFiled: March 7, 2002Publication date: October 24, 2002Inventors: Shinichi Nakabayshi, Hisahiko Abe, Hirofumi Tsuchiyama, Masaki Hiyama, Takashi Nishiguchi
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Patent number: 6468817Abstract: In the manufacturing method, micro scratches are detected without performing a breakdown inspection on wafers flowing through a mass production process. The method comprises: forming an insulating film on main surfaces of a plurality of first wafers which flow through a mass-production process; preparing a dummy wafer for monitoring, on which a silicon-oxide-based insulating film is formed; performing chemical mechanical polishing on the insulating films respectively formed on main surfaces of the plurality of first wafers and the dummy wafer; performing etching on the insulating film of the dummy wafer with use of a solution containing hydrofluoric acid, after the step of performing the chemical mechanical polishing; and measuring a number of scratches on the insulating film of the dummy wafer subjected to the etching.Type: GrantFiled: August 23, 2001Date of Patent: October 22, 2002Assignee: Hitachi, Ltd.Inventors: Shinichi Nakabayashi, Hisahiko Abe, Hirofumi Tsuchiyama, Yukio Kenbo, Yoshiteru Katsumura
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Patent number: 6445025Abstract: The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).Type: GrantFiled: May 4, 2001Date of Patent: September 3, 2002Assignee: Hitachi, Ltd.Inventors: Kazufumi Suenaga, Kiyoshi Ogata, Kazuhiko Horikoshi, Jun Tanaka, Hisayuki Kato, Keiichi Yoshizumi, Hisahiko Abe
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Publication number: 20020048941Abstract: In order to improve the dielectric constant, residual dielectric polarization, hysteresis characteristics, etc. of a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM, a target having a density of at least 90% of the theoretical value is used in forming, by sputtering, a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM.Type: ApplicationFiled: November 16, 2001Publication date: April 25, 2002Inventors: Hisayuki Kato, Hisahiko Abe, Shinji Nishihara, Masahito Yamazaki, Keiichi Yoshizumi
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Publication number: 20020042154Abstract: In the manufacturing method, micro scratches are detected without performing a breakdown inspection on wafers flowing through a mass production process.Type: ApplicationFiled: August 23, 2001Publication date: April 11, 2002Inventors: Shinichi Nakabayashi, Hisahiko Abe, Hirofumi Tsuchiyama, Yukio Kenbo, Yoshiteru Katsumura
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Patent number: 6326216Abstract: In order to improve the dielectric constant, residual dielectric polarization, hysteresis characteristics, etc. of a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM, a target having a density of at least 90% of the theoretical value is used in forming, by sputtering, a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM.Type: GrantFiled: August 5, 1997Date of Patent: December 4, 2001Assignee: Hitachi, Ltd.Inventors: Hisayuki Kato, Hisahiko Abe, Shinji Nishihara, Masahito Yamazaki, Keiichi Yoshizumi
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Publication number: 20010044210Abstract: For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 &mgr;m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.Type: ApplicationFiled: May 15, 2001Publication date: November 22, 2001Inventors: Shinichi Nakabayashi, Hisahiko Abe, Katsuhiro Ota
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Publication number: 20010029052Abstract: The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).Type: ApplicationFiled: May 8, 2001Publication date: October 11, 2001Inventors: Kazufumi Suenaga, Kiyoshi Ogata, Kazuhiko Horikoshi, Jun Tanaka, Hisayuki Kato, Keiichi Yoshizumi, Hisahiko Abe
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Publication number: 20010023952Abstract: The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).Type: ApplicationFiled: May 4, 2001Publication date: September 27, 2001Inventors: Kazufumi Suenaga, Kiyoshi Ogata, Kazuhiko Horikoshi, Jun Tanaka, Hisayuki Kato, Keiichi Yoshizumi, Hisahiko Abe
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Patent number: 6239457Abstract: The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).Type: GrantFiled: April 9, 1999Date of Patent: May 29, 2001Assignee: Hitachi, Ltd.Inventors: Kazufumi Suenaga, Kiyoshi Ogata, Kazuhiko Horikoshi, Jun Tanaka, Hisayuki Kato, Keiichi Yoshizumi, Hisahiko Abe
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Patent number: 5856917Abstract: Device including an input rectifying circuit 2 for effecting a full wave rectification on an AC input, and an output converter which includes a transforming device 11 having a primary winding 11a and a secondary winding 11b, the primary winding being connected through an inductor 16 with paired outputs of the input rectifying circuit, the secondary winding being connected through an output rectifying circuit with a load. Switching element 18 is controlled by a control circuit 20 to operate between ON and OFF states, and capacitor 19 is connected with the input rectifying circuit and the transforming device so as to be charged during the OFF state period of the switching element 18 through a charging circuit including the inductor 16, and to discharge during the ON state period through the primary winding 11a of the transforming device 11. The control circuit 20 controls the switching element to operate in an ON-OFF manner with a frequency faster than the frequency of the AC input.Type: GrantFiled: June 18, 1996Date of Patent: January 5, 1999Assignee: TDK CorporationInventors: Kenichi Aonuma, Shigetaka Maeyama, Hiromitsu Hirayama, deceased, Hiroko Hirayama, heiress, Hiroshi Hirayama, heiress, Hisahiko Abe