Abstract: A capacitive sensor includes a fixed electrode and a movable electrode that is movably supported by an anchor portion through a beam portion. The fixed electrode and the movable electrode are opposed to each other with a gap interposed therebetween, thereby constituting a detecting unit. A capacitance suitable for a size of the gap is detected to detect a predetermined physical value. At least one of an end of the beam portion connected to the anchor portion and an end of the beam portion connected to the movable electrode is provided with a stress moderating unit that moderates a stress.

Abstract: A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.

Abstract: A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.

Abstract: A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.

Abstract: A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion.

Abstract: A capacitive sensor includes a fixed electrode and a movable electrode that is movably supported by an anchor portion through a beam portion. The fixed electrode and the movable electrode are opposed to each other with a gap interposed therebetween, thereby constituting a detecting unit. A capacitance suitable for a size of the gap is detected to detect a predetermined physical value. At least one of an end of the beam portion connected to the anchor portion and an end of the beam portion connected to the movable electrode is provided with a stress moderating unit that moderates a stress.

Abstract: A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.

Abstract: A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.

Abstract: A capacitive sensor includes an error compensating unit that, in an arrangement that a part of a fixed electrode as an edge portion and a part of a movable electrode as an edge portion are opposed to each other keeping a gap in a direction of shift of a detecting unit, reduces a detection error of capacitance due to the shift of comb-tooth portions from each other in the detecting unit, by a change of capacitance according to variation of the gap caused by the shift.

Abstract: A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.

Abstract: A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion.

Abstract: A capacitive sensor includes an error compensating unit that, in an arrangement that a part of a fixed electrode as an edge portion and a part of a movable electrode as an edge portion are opposed to each other keeping a gap in a direction of shift of a detecting unit, reduces a detection error of capacitance due to the shift of comb-tooth portions from each other in the detecting unit, by a change of capacitance according to variation of the gap caused by the shift.

Abstract: A semiconductor acceleration sensor comprises: a frame having an opening inside thereof; flexible beams extending from the frame to the inside of the opening of the frame; a weight suspended from and supported by the beams so that the weight can freely move; piezoresistors to be mounted on the beams and to vary the resistance values in response to accelerations which work on the piezoresistors. The frame comprises damper plate portions, each of which covers a part of the opening spanning from a corner portion of two neighboring sides of the frame on the side of the opening to the inside of the opening, and each of which serves serve as a stopper to limit movement of the weight. The weight has corner portions which face the corner portions, respectively, and each of which is chamfered to have a shape of arc or a polygonal line consisting of at least three sides as seen in plan view.

Abstract: A mechanical deformation amount sensor includes a sensor structure which is formed by a semiconductor substrate or an insulating substrate and integrally includes a deformation portion deformable, when a physical quantity to be detected is applied to the sensor structure, due to the physical quantity and a support portion for supporting the deformation portion, a carbon nanotube resistance element which is provided on the deformation portion so as to be mechanically deformed in response to deformation of the deformation portion and a wiring pattern which is formed in a pattern on the sensor structure so as to be connected to the carbon nanotube resistance element. By applying a voltage to the carbon nanotube resistance element via the wiring pattern, a change of electrical conductivity of the carbon nanotube resistance element upon mechanical deformation of the carbon nanotube resistance element is fetched as an electrical signal.

Abstract: A semiconductor acceleration sensor comprises: a frame having an opening inside thereof; flexible beams extending from the frame to the inside of the opening of the frame; a weight suspended from and supported by the beams so that the weight can freely move; piezoresistors to be mounted on the beams and to vary the resistance values in response to accelerations which work on the piezoresistors. The frame comprises damper plate portions, each of which covers a part of the opening spanning from a corner portion of two neighboring sides of the frame on the side of the opening to the inside of the opening, and each of which serves serve as a stopper to limit movement of the weight. The weight has corner portions which face the corner portions, respectively, and each of which is chamfered to have a shape of arc or a polygonal line consisting of at least three sides as seen in plan view.

Abstract: A mechanical deformation amount sensor includes a sensor structure which is formed by a semiconductor substrate or an insulating substrate and integrally includes a deformation portion deformable, when a physical quantity to be detected is applied to the sensor structure, due to the physical quantity and a support portion for supporting the deformation portion, a carbon nanotube resistance element which is provided on the deformation portion so as to be mechanically deformed in response to deformation of the deformation portion and a wiring pattern which is formed in a pattern on the sensor structure so as to be connected to the carbon nanotube resistance element. By applying a voltage to the carbon nanotube resistance element via the wiring pattern, a change of electrical conductivity of the carbon nanotube resistance element upon mechanical deformation of the carbon nanotube resistance element is fetched as an electrical signal.

Abstract: A semiconductor relay circuit includes a MOS FET receiving a photovoltaic output generated across a photovoltaic diode array. The photovoltaic diode array is responsive to a light signal from a light-emitting element. A cross gate and source electrodes of a MOS FET is connected a control circuit which is at a high impedance state during the generation of the photovoltaic output but to be at a low impedance state upon disappearance of the output. Additionally, resistors are inserted in series respectively in each of current, one path flowing from the photovoltaic diode array across the gate and source electrodes of the MOS FET and the other path flowing a discharge current from a capacity across the gate and source electrodes of the MOS FET to the control circuit, whereby the setting of rise and fall of circuit output signals can be made easier.