Abstract: A method for evaluating performance of an aluminum alloy wiring film includes the steps of forming a first aluminum alloy film on a substrate, forming a second aluminum alloy film on another substrate, measuring hardness of the both films, and evaluating the superiority of stressmigration of the aluminum alloy films by comparison between the films in hardness.

Abstract: A method for forming a metallization layer for wiring in a semiconductor integrated circuit, which includes the steps of: (1) forming an interlayer insulator on a Si substrate used to form a semiconductor device; (b) forming a contact hole extending through the interlayer insulator down to a surface of the Si substrate on which surface is deposited a TiW or TiN film; (c) depositing an Al or Al alloy film on the interlayer insulator as well as on the TiW or TiN film in the contact hole; and (d) in a high-pressure inert gas atmosphere, heating the thus processed substrate to a temperature at which the Al or Al alloy film is fused, while vibrating the entire substrate with ultrasonic waves.