Abstract: The present invention provides a cleaning agent for removing the solder flux and method for cleaning the solder flux which exhibit the excellent cleaning property even at the time of cleaning a lead-free soldering flux, a high-melting-point solder flux or the like and, at the same time, exhibits the excellent rinsing property in the rinsing using an alcoholic solvent in a next step. Accordingly, the present invention provides a cleaning agent for removing the solder flux which sets a content of benzyl alcohol to a value which falls within a range of 70 to 99.9 weight % and a content of amino alcohol to a value which falls within a range of 0.1 to 30 weight % when a content of a glycol compound is below 1 weight % with respect to a total amount of the cleaning agent for removing the solder flux, and sets a content of benzyl alcohol to a value which falls within a range of 15 to 99 weight % and a content of amino alcohol to a value which falls within a range of 0.

Abstract: The present invention provides a cleaning agent for removing the solder flux and method for cleaning the solder flux which exhibit the excellent cleaning property even at the time of cleaning a lead-free soldering flux, a high-melting-point solder flux or the like and, at the same time, exhibits the excellent rinsing property in the rinsing using an alcoholic solvent in a next step. Accordingly, the present invention provides a cleaning agent for removing the solder flux which sets a content of benzyl alcohol to a value which falls within a range of 70 to 99.9 weight % and a content of amino alcohol to a value which falls within a range of 0.1 to 30 weight % when a content of a glycol compound is below 1 weight % with respect to a total amount of the cleaning agent for removing the solder flux, and sets a content of benzyl alcohol to a value which falls within a range of 15 to 99 weight % and a content of amino alcohol to a value which falls within a range of 0.

Abstract: The present invention provides a cleaning agent for removing the solder flux and method for cleaning the solder flux which exhibit the excellent cleaning property even at the time of cleaning a lead-free soldering flux, a high-melting-point solder flux or the like and, at the same time, exhibits the excellent rinsing property in the rinsing using an alcoholic solvent in a next step. Accordingly, the present invention provides a cleaning agent for removing the solder flux which sets a content of benzyl alcohol to a value which falls within a range of 70 to 99.9 weight % and a content of amino alcohol to a value which falls within a range of 0.1 to 30 weight % when a content of a glycol compound is below 1 weight % with respect to a total amount of the cleaning agent for removing the solder flux, and sets a content of benzyl alcohol to a value which falls within a range of 15 to 99 weight % and a content of amino alcohol to a value which falls within a range of 0.

Abstract: The present invention provides a cleaning agent for removing the solder flux and method for cleaning the solder flux which exhibit the excellent cleaning property even at the time of cleaning a lead-free soldering flux, a high-melting-point solder flux or the like and, at the same time, exhibits the excellent rinsing property in the rinsing using an alcoholic solvent in a next step. Accordingly, the present invention provides a cleaning agent for removing the solder flux which sets a content of benzyl alcohol to a value which falls within a range of 70 to 99.9 weight % and a content of amino alcohol to a value which falls within a range of 0.1 to 30 weight % when a content of a glycol compound is below 1 weight % with respect to a total amount of the cleaning agent for removing the solder flux, and sets a content of benzyl alcohol to a value which falls within a range of 15 to 99 weight % and a content of amino alcohol to a value which falls within a range of 0.

Abstract: This thin film-forming apparatus comprises a vacuum chamber 2 for forming a thin film on a target material 5, an evaporation source 3 arranged in the chamber 2 and having an evaporation port 33 through which the vapor of a material 40 to be vapor-deposited passes, and a moving mechanism 20 for moving the source 3 towards the widthwise direction of the port 33 between a prescribed waiting position and film-forming position of the source 3. This apparatus further comprises a film-thickness sensor 50 for detecting a film-forming speed of the material 40, which is arranged in a vicinity of the waiting position of the source 3 and on a side of the material 5. The source 3 is positioned opposite to the sensor 50 at the waiting position and is positioned opposite to the material 5 at the film-forming position.

Abstract: An electroluminescent display device is increased in size by securing plural small-size panels, each incorporating plural electroluminescent elements, to a large-size support with an intervening adhesive layer.

Abstract: A self-emission type image display device comprising a first transparent substrate, transparent pixel electrodes and driving elements for respectively driving the transparent pixel electrodes which are respectively formed on one surface of the first transparent substrate, a common electrode, a luminescent layer provided between the common electrode and the first transparent substrate, transparent discrete capacitance electrodes formed on the other surface of the first transparent substrate, a transparent common capacitance electrode, and a transparent capacitance layer provided between the transparent common capacitance electrode and the first transparent substrate, the corresponding electrodes in the discrete capacitance electrodes and the pixel electrodes being connected to each other by a contact hole, the transparent common capacitance electrode and the common electrode being connected to the ground by a connecting line in a peripheral edge portion of the panel.

Abstract: In order to obtain a microwave dielectric ceramic composition having a high dielectric constant (.epsilon.r) and a large Q value and having a temperature coefficient of resonance; frequency (.tau.f) which is close to zero, the present invention is directed to a microwave dielectric ceramic composition expressed by a composition formula of w.multidot.Li.sub.2 O-x.multidot.CaO-y.multidot.A.sub.2 O.sub.3 -z.multidot.TiO.sub.2, wherein w, x, y and z are respectively in the ranges of 0.0 mole %<w.ltoreq.25.0 mole %, 0.0 mole %.ltoreq.x.ltoreq.50.0 mole %, 0.0 mole %<y.ltoreq.30.0 mole %, 0.0 mole %<z.ltoreq.80.0 mole % where w+x+y+z=100 mole %, and not more than 5 parts by weight of any one of ZnO, CoO, NiO and MgO is contained therein, and wherein A is selected from Sm and Nd.

Abstract: In order to obtain a microwave dielectric ceramic composition having a high dielectric constant (.epsilon.r) and a large Q value and having a temperature coefficient of resonance frequency (.tau.f) which is close to zero, the present invention is directed to a microwave dielectric ceramic composition expressed by a composition formula of w.Li.sub.2 O-x.CaO-y.Sm.sub.2 O.sub.3 -z.TiO.sub.2, wherein w, x, y and z are respectively in the ranges of 0.0 mole % <w.ltoreq.25.0 mole %, 0.0 mole % .ltoreq.x.ltoreq.50.0 mole %, 0.0 mole % <y.ltoreq.30.0 mole %, 0.0 mole % <z.ltoreq.80.0 mole %, where w+x+y+z=100 mole %, and not more than 10 parts by weight of any one of MnO.sub.2, Bi.sub.2 0.sub.3, Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5 and SnO.sub.2 is contained therein.

Abstract: The present invention is characterized in that in order to obtain a microwave dielectric ceramic composition having a high dielectric constant (.epsilon.) and a large Q value and having a temperature coefficient (.tau.f) which is close to zero, calcium oxide and strontium oxide, sodium oxide or lead oxide which are mixed with each other in an adjusted ratio are added to lithium oxide, samarium oxide and titanium oxide.

Abstract: A microwave ceramic composition containing as main components substances expressed by a composition formula of x.BaO - y TiO.sub.2 - z.Nd.sub.2 O.sub.3 (where 0.05<=x<=0.25, 0.60<=y<=0.85, and 0.05<=z<=0.225) when their molar fractions are taken as x, y and z (x+y+z=1) and containing as a subcomponent one type selected from the group consisting of In.sub.2 O.sub.3, Bi.sub.2 O.sub.5, GeO.sub.2 and V.sub.2 O.sub.5.

Abstract: A microwave dielectric ceramic composition which is obtained by selecting, in a composition formula of (A.sup.1+.sub.1/2 .multidot.B.sup.3+.sub.1/2) TiO.sub.3, Li.sup.1+ and Nd.sup.3+, Co.sup.3+ or Pr.sup.3+ as A.sup.1+ and B.sup.3+, respectively. The dielectric ceramic composition expressed by (A.sup.1+.sub.1/2 .multidot.B.sup.3+.sub.1/2) TiO.sub.3 has a high dielectric constant and has a temperature coefficient of resonance frequency .tau.f which is large on the minus side. MgO, CoO, ZnO, CaCO.sub.3 or SrCO.sub.3 is added to such a dielectric ceramic composition expressed by (A.sup.1+.sub.1/2 .multidot.B.sup.3+.sub.1/2 /TiO.sub.3, to improve the Q value of the dielectric ceramic composition.

Abstract: A microwave dielectric ceramic composition containing as main components substances expressed by a composition formula of x.multidot.TiO.sub.2 -y.multidot.ZrO.sub.2 -z.multidot.SnO.sub.2 (where 0.30.ltoreq.x.ltoreq.0.60, 0.25.ltoreq.y.ltoreq.0.60, and 0.025.ltoreq.z.ltoreq.0.20) when their molar fractions are taken as x, y and z (x+y+z=1), and containing as additives predetermined amounts of one type selected from the group consisting of MnO, Al.sub.2 O.sub.3, CuO, Li.sub.2 O and Ga.sub.2 O.sub.3 and predetermined amounts of one type selected from the group consisting of Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5.