Abstract: Method for slicing a workpiece, including measuring a crystal axis orientation while holding a workpiece with a workpiece holder, setting the workpiece holder to a wire saw in such a manner that the measured crystal axis orientation is maintained, then adjusting a sliced plane orientation, pressing the workpiece against a wire row to slice the workpiece; the workpiece holder includes a portion slidable while holding the workpiece and a portion for fixing the slide portion, after measuring the crystal axis orientation, sliding the slide portion to move to the workpiece holder center in a manner that the measured crystal axis orientation is maintained, fixing the slide portion, setting the workpiece holder to the wire saw, then adjusting the sliced plane orientation, and slicing the workpiece. This enables an orientation measurement without limitation of distance between an orientation measuring instrument and plane to be measured can inhibit warpage deterioration and workpiece breakage.

Abstract: A method of resuming operation of a wire saw in which slicing of a workpiece is suspended due to a wire break, including processes of: imparting axial reciprocating motion to a wire while supplying a new line of the wire; and slicing the workpiece into wafers by moving the workpiece downwardly to press the workpiece against the reciprocating wire while supplying a slicing slurry to the wire, the method includes: repairing the broken wire after suspending the slicing of the workpiece before resuming the slicing of the workpiece; and preparing for the slicing in that a diameter of the repaired wire at a position at which the workpiece is to be sliced is matched to the diameter of the wire just before occurrence of the wire break. The method can inhibit the formation of grooves in wafers sliced after the resumption and reduce low-quality production wafers.

Abstract: Method for slicing a workpiece, including measuring a crystal axis orientation while holding a workpiece with a workpiece holder, setting the workpiece holder to a wire saw in such a manner that the measured crystal axis orientation is maintained, then adjusting a sliced plane orientation, pressing the workpiece against a wire row to slice the workpiece; the workpiece holder includes a portion slidable while holding the workpiece and a portion for fixing the slide portion, after measuring the crystal axis orientation, sliding the slide portion to move to the workpiece holder center in a manner that the measured crystal axis orientation is maintained, fixing the slide portion, setting the workpiece holder to the wire saw, then adjusting the sliced plane orientation, and slicing the workpiece. This enables an orientation measurement without limitation of distance between an orientation measuring instrument and plane to be measured can inhibit warpage deterioration and workpiece breakage.

Abstract: A method of resuming operation of a wire saw in which slicing of a workpiece is suspended due to a wire break, including processes of: imparting axial reciprocating motion to a wire while supplying a new line of the wire; and slicing the workpiece into wafers by moving the workpiece downwardly to press the workpiece against the reciprocating wire while supplying a slicing slurry to the wire, the method includes: repairing the broken wire after suspending the slicing of the workpiece before resuming the slicing of the workpiece; and preparing for the slicing in that a diameter of the repaired wire at a position at which the workpiece is to be sliced is matched to the diameter of the wire just before occurrence of the wire break. The method can inhibit the formation of grooves in wafers sliced after the resumption and reduce low-quality production wafers.

Abstract: The present invention provides a method for evaluating nanotopography of a surface of a semiconductor wafer sliced from a semiconductor ingot, the method being conducted prior to polishing of the surface, the method at least comprising: measuring a surface profile of the wafer in the direction that the wafer is sliced; determining a maximum inclination value of warp change of the wafer surface in a sectional profile in the direction that the wafer is sliced of the measured surface profile; and estimating nanotopography of the wafer surface after being polished based on the determined maximum value. As a result, there are provided a method and an apparatus for evaluating nanotopography of a surface of a semiconductor wafer, and a method for manufacturing a semiconductor wafer exhibiting good nanotopography level on the surface.

Abstract: The present invention provides a method for evaluating nanotopography of a surface of a semiconductor wafer sliced from a semiconductor ingot, the method being conducted prior to polishing of the surface, the method at least comprising: measuring a surface profile of the wafer in the direction that the wafer is sliced; determining a maximum inclination value of warp change of the wafer surface in a sectional profile in the direction that the wafer is sliced of the measured surface profile; and estimating nanotopography of the wafer surface after being polished based on the determined maximum value. As a result, there are provided a method and an apparatus for evaluating nanotopography of a surface of a semiconductor wafer, and a method for manufacturing a semiconductor wafer exhibiting good nanotopography level on the surface.

Abstract: There is disclosed a method of slicing a semiconductor ingot in which the ingot is pressed against a moving wire. A thinner portion of the wire is used at the beginning of slicing to cut a portion of the ingot where the cutting length is shorter than a predetermined length, and a thicker portion of the wire is used when the cutting length becomes longer than the predetermined length. Subsequently, a thinner portion of the wire is used when the slicing approaches to the end and the cutting length becomes shorter than a predetermined length. A portion of the wire used in previous slicing is used as the thinner portion. Alternatively, the thinner portion is formed through use of a die. The slicing method makes it possible to cut the ingot into a plurality of wafers having a uniform thickness.

Abstract: A lapping apparatus and a method for effectively utilizing a regenerated abrasive fluid in the lapping process of works such as semiconductor wafers or quartz wafers without causing any damage such as scratches to the works.A work lapping method using a regenerated abrasive fluid prepared from a used abrasive fluid and a new abrasive fluid, which comprises the steps of preliminarily lapping a work using the regenerated abrasive fluid to a predetermined stock removal of the work, and finally lapping the preliminarily lapped work using the new abrasive fluid.