Patents by Inventor Hisaki Kozaki

Hisaki Kozaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus
    Patent number: 7973281
    Abstract: A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent cont
    Type: Grant
    Filed: July 8, 2009
    Date of Patent: July 5, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroyuki Hayashi, Takamitsu Nagai, Tomonobu Noda, Kenichi Kadota, Hisaki Kozaki
  • Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus
    Publication number: 20090272901
    Abstract: A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent cont
    Type: Application
    Filed: July 8, 2009
    Publication date: November 5, 2009
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hiroyuki Hayashi, Takamitsu Nagai, Tomonobu Noda, Kenichi Kadota, Hisaki Kozaki
  • Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus
    Patent number: 7573066
    Abstract: A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent cont
    Type: Grant
    Filed: April 4, 2007
    Date of Patent: August 11, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroyuki Hayashi, Takamitsu Nagai, Tomonobu Noda, Kenichi Kadota, Hisaki Kozaki
  • Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus
    Publication number: 20080011947
    Abstract: A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent cont
    Type: Application
    Filed: April 4, 2007
    Publication date: January 17, 2008
    Inventors: Hiroyuki Hayashi, Takamitsu Nagai, Tomonobu Noda, Kenichi Kadota, Hisaki Kozaki