Patents by Inventor Hisaki Yada

Hisaki Yada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9099219
    Abstract: An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: August 4, 2015
    Assignee: SUMITOMO METAL MINING CO., LTD.
    Inventors: Yoshiyuki Abe, Riichiro Wake, Masakazu Kuwahara, Kentaro Sogabe, Azusa Oshiro, Hisaki Yada
  • Patent number: 8941002
    Abstract: Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which CompS/CompA=0.9 to 1.1, where the content of cerium in a surface layer to a depth of 5 ?m from a surface of the sintered body is represented by a Ce/In atomic ratio (CompS), and an average value of the content of cerium in the entire sintered body is represented by a Ce/In atomic ratio (CompA).
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: January 27, 2015
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Riichiro Wake, Masakazu Kuwahara, Kentaro Sogabe, Azusa Oshiro, Hisaki Yada
  • Publication number: 20130327395
    Abstract: An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.
    Type: Application
    Filed: August 15, 2013
    Publication date: December 12, 2013
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Yoshiyuki ABE, Riichiro WAKE, Masakazu KUWAHARA, Kentaro SOGABE, Azusa OSHIRO, Hisaki YADA
  • Patent number: 8574464
    Abstract: An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: November 5, 2013
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Riichiro Wake, Masakazu Kuwahara, Kentaro Sogabe, Azusa Oshiro, Hisaki Yada
  • Publication number: 20120279564
    Abstract: Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which CompS/CompA=0.9 to 1.1, where the content of cerium in a surface layer to a depth of 5 ?m from a surface of the sintered body is represented by a Ce/In atomic ratio (CompS), and an average value of the content of cerium in the entire sintered body is represented by a Ce/In atomic ratio (CompA).
    Type: Application
    Filed: January 7, 2011
    Publication date: November 8, 2012
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Yoshiyuki Abe, Riichiro Wake, Masakazu Kuwahara, Kentaro Sogabe, Azusa Oshiro, Hisaki Yada
  • Publication number: 20110126899
    Abstract: An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.
    Type: Application
    Filed: November 1, 2010
    Publication date: June 2, 2011
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Yoshiyuki ABE, Riichiro Wake, Masakazu Kuwahara, Kentaro Sogabe, Azusa Oshiro, Hisaki Yada