Patents by Inventor Hisakithi Onodera

Hisakithi Onodera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 4500904
    Abstract: A solder joint between a semiconductor substrate and an electrode is disclosed in which that principal surface of the semiconductor substrate where an n-type semiconductor layer is exposed is bonded to the electrode with brazing solder, and the brazing solder includes aluminum solder provided on the side of the semiconductor substrate and copper solder provided on the side of the electrode. Since solid phase adhesion can be achieved between aluminum and copper even at temperatures below an eutectic temperature of 548.degree. C., the semiconductor substrate can be soldered to the electrode at the low temperatures.
    Type: Grant
    Filed: October 20, 1983
    Date of Patent: February 19, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Jin Onuki, Ko Soeno, Keiichi Morita, Hisakithi Onodera