Patents by Inventor Hisako Ono

Hisako Ono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 5903053
    Abstract: A semiconductor device comprising a conductive layer and an amorphous alloy layer formed on the bottom surface of said conductive layer and acting as a barrier layer. The conductive layer is either an electrode layer or a wiring layer. The amorphous alloy layer is made of a matrix phase and microcrystal grains. The matrix phase consists mainly of a Ti--Si--N amorphous alloy. The microcrystal grains are dispersed in the matrix phase, not continuously arranged in the direction of thickness of the amorphous alloy layer.
    Type: Grant
    Filed: July 9, 1996
    Date of Patent: May 11, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadashi Iijima, Hisako Ono, Kyoichi Suguro, Yasushi Akasaka, Shinichi Nakamura
  • Semiconductor device and method of manufacturing the same
    Patent number: 5763953
    Abstract: A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.
    Type: Grant
    Filed: January 18, 1996
    Date of Patent: June 9, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadashi IIjima, Hisako Ono, Yukihiro Ushiku, Akira Nishiyama, Naomi Nakasa
  • Method of diffusing a metal through a silver electrode to form a protective film on the surface of the electrode
    Patent number: 5529954
    Abstract: A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: June 25, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadashi Iijima, Hisako Ono, Yukihiro Ushiku, Akira Nishiyama, Naomi Nakasa