Abstract: An optical wavelength converting device is provided with a LiTaO.sub.3 substrate, a plurality of inverted-polarization layers periodically arranged in an upper surface of the LiTaO.sub.3 substrate, and an optical waveguide crossing the inverted-polarization layers. The upper surface of the LiTaO.sub.3 substrate is directed toward a -X-crystal axis direction. The inverted-polarization layers are formed by exchanging Ta.sup.+ ions of the LiTaO.sub.3 substrate for H.sup.+ ions, and an extending direction of each inverted-polarization layer is inclined at an angle of .theta. degrees (6.ltoreq..theta..ltoreq.174) to the +C-crystal axis direction toward a -Y-crystal axis direction. The optical waveguide is formed by exchanging Ta.sup.+ ions of the LiTaO.sub.3 substrate and the inverted-polarization layers for H.sup.+ ions to set a refractive index of the optical waveguide higher than that of the LiTaO.sub.3 substrate. The optical waveguide extends in a +Y-crystal axis direction.

Abstract: An optical wavelength converting device is provided with a LiTaO.sub.3 substrate, a plurality of inverted-polarization layers periodically arranged in an upper surface of the LiTaO.sub.3 substrate, and an optical waveguide crossing the inverted-polarization layers. The upper surface of the LiTaO.sub.3 substrate is directed toward a -X-crystal axis direction. The inverted-polarization layers are formed by exchanging Ta.sup.+ ions of the LiTaO.sub.3 substrate for H.sup.+ ions, and an extending direction of each inverted-polarization layer is inclined at an angle of .theta. degrees (6.ltoreq..theta..ltoreq.174) to the +C-crystal axis direction toward a -Y-crystal axis direction. The optical waveguide is formed by exchanging Ta.sup.+ ions of the LiTaO.sub.3 substrate and the inverted-polarization layers for H.sup.+ ions to set a refractive index of the optical waveguide higher than that of the LiTaO.sub.3 substrate. The optical waveguide extends in a +Y-crystal axis direction.

Abstract: An analog transmission system for transmitting a multi-channel analog signal including plural carrier signals having different frequencies, comprises: a laser unit responsive to the multi-channel analog signal for emitting laser light signal intensity-modulated by the multi-channel analog signal, the laser unit having an oscillation wavelength W1; an optical fiber amplifier for amplifying the laser light signal with a peak gain at a wavelength W2; an optical fiber for transmitting the amplified laser light; and an optical receiver for receiving the transmitted laser light and for converting the received laser light into an electric signal as an output. In this system, a total distortion characteristic of the laser unit is compensated by distortions developed in the optical fiber amplifier.

Abstract: The optical fiber is doped at the core thereof with Tm ions and Nd ions. When light at a wavelength in a 800-nm band for exciting the Nd ions, is incident upon the optical fiber through an incident portion thereof, the Nd ions emit light at a wavelength in the vicinity of 1,012 .mu.m. Through three excitations by absorption of light emitted from the Nd ions and/or energy transfer from the Nd ions, the Tm ions experience three excitation transitions and reach a third high energy level through first and second high energy levels. Thereafter, the Tm ions experience a radiative transition from the third high energy level, thereby to emit blue light at a wavelength of 480 nm.

Abstract: The wavelength tolerance of a frequency doubler is enhanced so as to perform stable operation. Further, with the use of this frequency doubler, a laser source can directly modulate a laser. A waveguide and a periodic domain inverted layer are formed on an LiTaO.sub.3 substrate of -C plate, and the waveguide is divided into a plurality of zones having different propagation constants. A fundamental wave inputted in the waveguide is converted into a harmonic wave in each of the zones, and is emitted as SHG light. Parts for modulating the phases of the harmonic waves produced in the respective zones are provided between the zones.

Abstract: The effective rate of deactivation from the terminal state to the ground state of a rare earth ion doped optical material in a four-level amplifying or lasing scheme may be increased greatly by doping the optical material with two rare earth ions, an activator and a deactivator. Energy transfer occurs between the terminal state in the activator ion and the deactivator ion. The transition from the deactivator to the ground state occurs via phonon emission. By increasing the deactivation rate, the efficiency of the laser and the amplifier is increased.

Abstract: A core of a fluorozirconate optical fiber is doped with rare earth ions, namely trivalent Dy ions. The Dy ion makes an absorption transition with excitation light generated by an 800 nm semiconductor laser module. Then the Dy ion undergoes transitions, namely a nonradiative transition involving phonon emission, a transition to a metastable excited level, and a radiative transition wherein radiation corresponding to the 1.28 .mu.m to 1.35 .mu.m range occurs, thereafter returning to its ground state level. The Dy ion having an electrovalence of three can be pumped with a high-output 800 nm semiconductor laser module and is not subject to saturation at a lower energy level of population inversion. Using an optical fiber of the invention, a higher gain is obtained in the region of 1.3 .mu.m telecommunications window.

Abstract: A semiconductor laser generating no intensity noise caused by reflected light and oscillating at a single frequency, wherein a cavity resonator is disposed externally of the semiconductor laser in order to suppress the oscillation frequency shift (chirping) of the semiconductor laser possibly induced with current modulation of the same.

Abstract: An electroluminescent panel comprising a pair of electrodes having sandwiched therebetween a multi-layer comprising an insulating layer in contact with one of said electrodes, an electroluminescent layer and an intermediate layer formed from a conductive material which is in intimate contact with the electroluminescent layer but is out of contact with both of the electrodes. Due to the provision of the intermediate layer, the brightness of the electroluminescent panel can be kept high for a long time.