Abstract: A multilayer body of the present disclosure includes a support, a bismuth-including layer, and an intermediate layer. The bismuth-including layer includes at least one selected from the group consisting of pure bismuth, a bismuth alloy, bismuth oxide, and a composite oxide including bismuth. The intermediate layer includes at least one selected from the group consisting of pure zinc, a zinc alloy, pure tin, a tin alloy, pure lead, and a lead alloy. Additionally, the intermediate layer is disposed between the bismuth-including layer and the support in a thickness direction of the bismuth-including layer.

Abstract: A dielectric of the present disclosure includes a composite oxide including at least two selected from the group consisting of Nb, Bi, and Ta, wherein the following requirement (I), (II), or (III) is satisfied: (I) the composite oxide includes Nb, Bi, and Ta; (II) the composite oxide includes Nb and Bi and is amorphous; and (III) the composite oxide includes Bi and Ta and is amorphous.

Abstract: A dielectric of the present disclosure includes a tantalum compound containing fluorine and oxygen and being amorphous, and is advantageous in terms of achieving a high dielectric constant.