Abstract: A high frequency module capable of improving heat dissipation characteristics of a power amplifier and suppressing influence of heat of the power amplifier on another electronic component is provided. A high frequency module includes a mounting substrate, a power amplifier, a switch, a plurality of external connection terminals, and a connector. The mounting substrate has a first main surface and a second main surface that are opposite to each other. The power amplifier and the switch are disposed on the second main surface of the mounting substrate. The plurality of external connection terminals are disposed on the second main surface of the mounting substrate. The connector is able to be connected to an external substrate. The plurality of external connection terminals include a first external connection terminal that is connected to the connector. The first external connection terminal is disposed between the power amplifier and the switch.

Abstract: A high frequency module capable of improving a heat dissipation performance of a power amplifier includes a mounting board, a power amplifier, and a connection member. The mounting board has a first main surface facing a second main surface. The power amplifier is disposed on the second main surface of the mounting board. The connection member is connectable to an external board. The power amplifier includes a base material, a transistor, and a through via. The base material has a third main surface facing a fourth main surface, and the third main surface is disposed between the second main surface and the fourth main surface. The transistor is disposed on the third main surface of the base material. The through via is provided between the third main surface and the fourth main surface. The through via is connected to the connection member.

Abstract: A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.

Abstract: A power amplifying module includes a first input terminal, a second input terminal, a first power amplifier, a stage matching circuit, a bypass line, and a second power amplifier. The first input terminal receives a first input signal in a first operation mode. The second input terminal receives a second input signal in a second operation mode which is different from the first operation mode. The first power amplifier amplifies the first input signal and outputs a first amplified signal. The stage matching circuit is disposed downstream of the first power amplifier and receives the first amplified signal. The bypass line outputs the second input signal to the inside of the stage matching circuit not through the first power amplifier. The second power amplifier is disposed downstream of the stage matching circuit, and amplifies the first amplified signal or the second input signal and outputs a second amplified signal.

Abstract: A power amplifier circuit includes a first amplification path including a first power amplifier, a second amplification path including a second power amplifier, a first switching circuit configured to electrically connect either the first amplification path or the second amplification path and a first output terminal to each other, a second switching circuit configured to electrically connect an input terminal and any one of a plurality of second output terminals to each other, and a matching circuit configured to electrically connect the first output terminal and the input terminal to each other and achieve impedance matching between the first output terminal and the input terminal.

Abstract: A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.

Abstract: A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.

Abstract: A power amplifier circuit includes a first path and a second path between an input terminal and an output terminal, a first amplifier located in the first path operative in a first mode, a second amplifier located in the second path operative in a second mode, a first matching circuit between the first amplifier and the output terminal in the first path, a first capacitor having a first end connected to the output terminal side of the first matching circuit, and a second end, a first inductor having a first end connected to the second end of the first capacitor and a second end grounded, and a short-circuit switch connected in parallel with the first inductor. The short-circuit switch short-circuits the first and second ends of the first inductor in the first mode and is placed in an open-circuit position in the second mode.

Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

Abstract: A power amplifying circuit includes a single-ended amplifier, a differential amplifier, a first balun transformer, a second balun transformer, and a first switching circuit. The single-ended amplifier operates in a first mode and a second mode different from the first mode. The differential amplifier operates in the second mode. The first balun transformer converts an unbalanced output signal from the single-ended amplifier into a differential signal and outputs the differential signal to the differential amplifier. The second balun transformer converts a balanced output signal from the differential amplifier into an unbalanced output signal. The first switching circuit outputs the unbalanced output signal from the single-ended amplifier in the first mode and outputs the unbalanced output signal from the second balun transformer in the second mode.

Abstract: A power amplifier circuit includes a first amplification path including a first power amplifier, a second amplification path including a second power amplifier, a first switching circuit configured to electrically connect either the first amplification path or the second amplification path and a first output terminal to each other, a second switching circuit configured to electrically connect an input terminal and any one of a plurality of second output terminals to each other, and a matching circuit configured to electrically connect the first output terminal and the input terminal to each other and achieve impedance matching between the first output terminal and the input terminal.

Abstract: A power amplifying module includes a first input terminal, a second input terminal, a first power amplifier, a stage matching circuit, a bypass line, and a second power amplifier. The first input terminal receives a first input signal in a first operation mode. The second input terminal receives a second input signal in a second operation mode which is different from the first operation mode. The first power amplifier amplifies the first input signal and outputs a first amplified signal. The stage matching circuit is disposed downstream of the first power amplifier and receives the first amplified signal. The bypass line outputs the second input signal to the inside of the stage matching circuit not through the first power amplifier. The second power amplifier is disposed downstream of the stage matching circuit, and amplifies the first amplified signal or the second input signal and outputs a second amplified signal.

Abstract: A power amplifier circuit includes a first path and a second path between an input terminal and an output terminal, a first amplifier located in the first path operative in a first mode, a second amplifier located in the second path operative in a second mode, a first matching circuit between the first amplifier and the output terminal in the first path, a first capacitor having a first end connected to the output terminal side of the first matching circuit, and a second end, a first inductor having a first end connected to the second end of the first capacitor and a second end grounded, and a short-circuit switch connected in parallel with the first inductor. The short-circuit switch short-circuits the first and second ends of the first inductor in the first mode and is placed in an open-circuit position in the second mode.

Abstract: A power amplifier circuit includes a first transistor having a base or gate connected to a signal path, an emitter or source grounded via a first conductor, and a collector or drain, the first transistor amplifying an input signal supplied to the base or gate thereof along the signal path and outputting the amplified signal from the collector or drain thereof; a first element in a preceding stage of the first transistor, the first element having a first end connected to the signal path such that the first element is connected along a path branched from the signal path, and a second end grounded via a second conductor; and a first capacitor having a first end connected to a node between the emitter or source of the first transistor and the first conductor, and a second end connected to a node between the first element and the second conductor.

Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

Abstract: A power amplifier circuit includes a first transistor that amplifies an RF signal; a bias current source that supplies a bias current to a second terminal of the first transistor through a first current path; and an adjustment circuit that adjusts the bias current in accordance with a variable power-supply voltage supplied from a power-supply terminal. The adjustment circuit includes first to third resistors, and an adjustment transistor including a first terminal connected to the power-supply terminal through the first resistor, a second terminal connected to the bias current source through the second resistor, and a third terminal connected to the first current path through the third resistor. When the variable power-supply voltage is not less than a first voltage and not greater than a third voltage, the adjustment circuit increases a current that flows to the power-supply terminal through a second current path as the variable power-supply voltage decreases.

Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

Abstract: A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.

Abstract: A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.

Abstract: A power amplifier circuit includes a first transistor that amplifies an RF signal; a bias current source that supplies a bias current to a second terminal of the first transistor through a first current path; and an adjustment circuit that adjusts the bias current in accordance with a variable power-supply voltage supplied from a power-supply terminal. The adjustment circuit includes first to third resistors, and an adjustment transistor including a first terminal connected to the power-supply terminal through the first resistor, a second terminal connected to the bias current source through the second resistor, and a third terminal connected to the first current path through the third resistor. When the variable power-supply voltage is not less than a first voltage and not greater than a third voltage, the adjustment circuit increases a current that flows to the power-supply terminal through a second current path as the variable power-supply voltage decreases.