Abstract: A resynchronization circuit possesses a sufficient migration margin even when the speed of a clock signal used for outputting data is increased, so that the data transfer speed can be increased. In the resynchronization circuit, a determination circuit holds a signal which is determined according to the phase difference between a determination signal and a reference clock signal (determination result). In a synchronization circuit block, a received data signal is held in synchronization with a strobe signal. Then, the received data signal is held in synchronization with a clock signal which has the same frequency as that of the reference clock signal and has a phase determined according to the determination result and output from the resynchronization circuit.

Abstract: A resynchronization circuit possesses a sufficient migration margin even when the speed of a clock signal used for outputting data is increased, so that the data transfer speed can be increased. In the resynchronization circuit, a determination circuit holds a signal which is determined according to the phase difference between a determination signal and a reference clock signal (determination result). In a synchronization circuit block, a received data signal is held in synchronization with a strobe signal. Then, the received data signal is held in synchronization with a clock signal which has the same frequency as that of the reference clock signal and has a phase determined according to the determination result and output from the resynchronization circuit.

Abstract: An output circuit serving as an interface between an LSI and an external LSI, even though the power voltage of the external LSI is not less than the withstand voltage of the gate oxide layer of each of the MOS transistors forming the output circuit, can supply, from the output unit thereof, a signal of which amplitude is equal to the power voltage of the external LSI without a voltage not less than the withstand voltage above-mentioned applied to the gate oxide layer of each of the MOS transistors. A pull-up circuit for pulling up the potential of the output unit comprises first and second PMOSs being connected in series between the power of the external LSI and the output unit, the first PMOS receiving a pull-up control signal at the gate thereof. A pull-down circuit for pulling down the potential of the output unit comprises first and second NMOSs being connected in series between the output unit and the ground, the first NMOS receiving a pull-down control signal S.sub.d at the gate thereof.